DATA SHEET MOS INTEGRATED CIRCUIT µPD16803 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.0 Ω TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Stop mode function that turns OFF all output transistors • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) C1H 1 20 C1L C2L 2 19 C2H VM1 3 18 VG 1A 4 17 1B PGND 5 16 PGND 2A 6 15 2B VDD 7 14 VM2 IN1 8 13 RX IN2 9 12 PS INC 10 11 DGND Document No. S11452EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan © 1997 µPD16803 ORDERING INFORMATION Part Number Package µPD16803GS 20-pin plastic SOP (300 mil) BLOCK DIAGRAM 0.01 µ F VDD C1L OSC CIRCUIT 0.01 µ F C1H C2L CHARGE PUMP 0.01 µ F C2H VG Note 1 2 × VDD + VM VM VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT 1A “H” BRIDGE 1 SWITCH CIRCUIT Note 2 1B PGND 50 kΩ 50 kΩ 50 kΩ 50 kΩ PS Note 3 VM2 IN1 IN2 CONTROL CIRCUIT LEVEL SHIFT INC 2A “H” BRIDGE 2 2B DGND PGND Connected in diffusion layer Notes 1. 3 × VDD where VM ≤ VDD 2. The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current. In the power-saving mode, the motor cannot turn. 3. It is recommended to connect an external capacitor of 0.22 µF or more between VM and GND to stabilize the operation. 2 µPD16803 FUNCTION TABLE Excitation Direction INC IN1 IN2 H1 H2 <1> <2> <3> <4> H H H H H L L H H H L L F R R F F F R R – L × × H1F <4> <1> H2R Stop F: Forward H2F <3> <2> R: Reverse H1R For the excitation waveform timing chart, refer to APPLICATION EXAMPLE. FORWARD REVERSE STOP VM VM VM ON OFF A OFF OFF B ON A ON ON OFF B OFF A OFF OFF B OFF 3 µPD16803 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Rating Unit Supply voltage (motor block) VM –0.5 to +15 V Supply voltage (control block) VDD –0.5 to +7 V Pd1 1.0Note 1 W Pd2 1.25Note 2 ID (pulse) ±1.0Note 2, 3 A Input voltage VIN –0.5 to VDD + 0.5 V Operating temperature range TA 0 to 60 °C TjMAX. 150 °C Tstg –55 to +125 °C Power consumption Instantaneous H bridge driver current Operation junction temperature Storage temperature range Notes 1. IC only 2. When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) 3. t ≤ 5 ms, Duty ≤ 40 % Pd – TA Characteristics 1.4 When mounted on printed circuid boad Average power consumption Pd (W) 1.2 IC only 1.0 0.8 0.6 0.4 0.2 0 20 40 60 Ambient temperature TA (˚C) 4 80 100 µPD16803 RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply voltage (motor block) VM 4.0 5.0 13.2 V Supply voltage (control block) VDD 4.0 5.0 6.0 V RX pin connection resistance RX 2 H bridge driver currentNote IDR ±380 mA Charge pump capacitance C1 to C3 5 20 nF TA 0 60 °C Operating temperature kΩ Note When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified) Parameter OFF VM pin current Symbol IM Conditions INC pin lowNote 1 MIN. TYP. MAX. Unit VM = 6.0 V VDD = 6.0 V 1.0 µA VM = 13.2 V VDD = 6.0 V 1.0 mA VDD pin current IDD Note 2 1.0 mA IN1, IN2, INC pin high-level IIH1 TA = 25 °C, VIN = VDD 1.0 µA 0 ≤ TA ≤ 60 °C, VIN = VDD 2.0 input current IN1, IN2, INC pin low-level input IIL1 current PS pin high-level input current PS pin low-level input current IN1, IN2, INC pin input pull-up IIH2 IIL2 Control pin high-level input voltage Control pin low-level input voltage TA = 25 °C, VIN = 0 V –0.15 0 ≤ TA ≤ 60 °C, VIN = 0 V –0.2 TA = 25 °C, VIN = VDD 0.15 0 ≤ TA ≤ 60 °C, VIN = VDD 0.2 TA = 25 °C, VIN = 0 V –1.0 0 ≤ TA ≤ 60 °C, VIN = 0 V –2.0 RINU TA = 25 °C 35 0 ≤ TA ≤ 60 °C 25 RIND TA = 25 °C 35 0 ≤ TA ≤ 60 °C 25 75 3.0 VDD + 0.3 resistance PS pin input pull-down resistance 0.4 VIH VIL 50 RON1 VDD = 5 V, VM = 5 V resistanceNote 3 RON2 VDD = 5 V, VM = 12 V RON relative accuracy ∆RON Excitation direction <2>, VX relative accuracy in VX ∆V X power-saving mode Excitation direction <2>, TONG VDD = 5 V, VM = 5 V H bridge circuit turn ON time TONH H bridge circuit turn OFF time TOFFH 65 kΩ V V 3.0 Ω 2.0 4.0 ±5 % ±10 2.5 V ±5 <4>Note 4 % ±5 Excitation direction <1>, <3> Charge pump circuit (VG) turn ON time kΩ 0.8 <4>Note 4 VDD = VM = 5 V, RX = 50 kΩ µA 1.5 Excitation direction <1>, <3> VX voltage in power-saving modeNote 5 mA 75 50 –0.3 H bridge circuit ON 65 mA 0.3 2 ms C1 = C2 = C3 = 10 nF 5 µs RM = 20 Ω 5 µs Notes 1. When VDD < VM, a current (IM1) always flow from the VM1 pin to the charge pump circuit because a gate voltage (2 × VDD + VM) is generated. 2. When IN1 = IN2 = INC = “H”, PS = “L” 3. Sum of ON resistances of top and bottom transistors 4. For the excitation direction, refer to FUNCTION TABLE. 5. VX is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in Function Table. 5 µPD16803 CHARACTERISTIC CURVES RON vs. VDD (= VM) Characteristics RON vs. VM Characteristics 8 RM = 60 Ω RM = 20 Ω 7 H bridge ON resistance RON (Ω) H bridge ON resistance RON (Ω) 3 2 1 0 4.0 5.0 6.0 6 VDD = 4.5 V 5 4 3 VDD = 5.0 V 2 VDD = 5.5 V 1 Supply voltage VDD (= VM) (V) 0 10 11 12 13 14 Motor voltage VM (V) RON vs. Tj Characteristics VX vs. RX Characteristics 4.0 VDD = VM = 5.0 V RM = 20 Ω 2 1 0 25 50 75 100 125 Operation junction temperature Tj (˚C) 150 3.0 2.5 2.0 1.5 1.0 0.5 0 VX voltage in power-saving mode VX (V) VX vs. VDD (= VM) Characteristics 3.0 RX = 50 kΩ RM = 20 Ω 2.5 2.0 4.0 5.0 Supply voltage VDD (= VM) (V) 6 6.0 VDD = VM = 5 V RM = 20 Ω VX : Note 5 3.5 VX voltage in power-saving mode VX (V) H bridge ON resistance RON (Ω) 3 20 40 60 80 100 120 140 160 RX pin connection resistance RX (kΩ) Step input External circumference seek Internal circumference seek Direction PH11 PH21 0.01 µF VDD C1L OSC CIRCUIT 0.01 µF 0.01 µF C1H C2L CHARGE PUMP C2H VG 2 × VDD + VM VM APPLICATION CIRCUIT EXAMPLE 1. Connection with 1-chip FDD LSI µPC2100AGF µ PC2100AGF Stepping Motor Excitation Timing Chart VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT 0.22 µ F 1A “H” BRIDGE 1 PH21 IN2 STB0 50 kΩ PGND VM2 CONTROL CIRCUIT LEVEL SHIFT 2A “H” BRIDGE 2 2B DGND PGND 7 µ PC2100AGF Connected in diffusion layer µPD16803 INC 50 kΩ IN1 50 kΩ PH11 SWITCH CIRCUIT PS 50 kΩ SPF0 1B C1L OSC CIRCUIT C1H C2L CHARGE PUMP C2H VG 2 × VDD + VM VM VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT 0.22 µ F 1A “H” BRIDGE 1 PH21 IN2 INC PGND 50 kΩ 50 kΩ IN1 50 kΩ PH11 SWITCH CIRCUIT PS 50 kΩ SPF0 1B VM2 CONTROL CIRCUIT LEVEL SHIFT 2A “H” BRIDGE 2 2B DGND PGND µ PC2100AGF Connected in diffusion layer µPD16803 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. VDD 0.01 µF 0.01 µF 2. Connection with 1-chip FDD LSI µPC2100AGF 8 0.01 µF µPD16803 20 PIN PLASTIC SOP (300 mil) 20 11 P detail of lead end 1 10 A H J E K F G I C N D M L B M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 13.00 MAX. 0.512 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7±0.3 0.303±0.012 I 5.6 0.220 J 1.1 0.043 K 0.20 +0.10 –0.05 0.008 +0.004 –0.002 L 0.6±0.2 M 0.12 0.005 N 0.10 0.004 P 3 ° +7° –3° 3° +7° –3° 0.024 +0.008 –0.009 P20GM-50-300B, C-4 9 µPD16803 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). Soldering Method Soldering Conditions Symbol of Recommended Soldering Infrared reflow Peak package temperature: 230 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 1, Number of days: NoneNote IR30-00 VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), Number of times: 1, Number of days: NoneNote VP15-00 Wave soldering Solder bath temperature: 260 °C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote WS60-00 Partial heating Pin temperature: 300 °C MAX., Time: 10 seconds MAX., Number of days: NoneNote Note The number of storage days at 25 °C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating). 10 – µPD16803 [MEMO] 11 µPD16803 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 96.5 2