DATA SHEET MOS INTEGRATED CIRCUIT µPD16823 MONOLITHIC H BRIDGE DRIVER DESCRIPTION This IC is a monolithic H bridge driver employing a horizontal N-channel power MOS FET for its driver stage. It is provided with forward/reverse and brake functions and is ideal as a driver circuit for a motor that winds or rewinds the film in a camera, or a motor for moving a lens. FEATURES • High drive current IDR1 = 0.5 A (DC) IDR2 = 1 A: at PW ≤ 200 ms, duty cycle ≤ 50% IDR3 = 3 A: at PW ≤ 200 ms, single pulse • 1.5ch H bridge circuits • Low ON resistance (sum of ON resistance of top and bottom FETs) RON = 0.6 Ω TYP. at IDR = 0.5 A • Standby function that turns OFF charge pump circuit • Low-voltage drive (2.5 V MIN.) • Surface-mount mini-mold package: 20-pin plastic SOP (300 mil) ORDERING INFORMATION Part Number µPD16823GS Package 20-pin plastic SOP (300 mil) BLOCK DIAGRAM C1 C2 VDD OSC CIRCUIT STBY C3 External capacitors C1 through C3: 10 nF External capacitor C4: 1 to 10 µF CHARGE PUMP CIRCUIT VM IN1 IN2 OUT1 CONTROL CIRCUIT IN3 LEVEL SHIFT CIRCUIT LDMOS H BRIDGE CIRCUIT OUT2 OUT3 Motor 1 Motor 2 Pull-down resistor: 50 kΩ LGND PGND The information in this document is subject to change without notice. Document No. S12721EJ2V0DS00 (2nd edition) Date Published August 1997 N Printed in Japan © 1997 µPD16823 PIN CONFIGURATION 1 C2L C2H 20 2 C1H VG 19 3 C1L STBY 18 4 VM OUT3 17 5 OUT2 PGND 16 6 VM OUT1 15 7 VDD PGND 14 8 IN2 NC 13 9 IN3 DGND 12 10 IN1 NC 11 INTERNAL CONNECTION VM SW1 SW3 LOAD1 Forward LOAD2 Forward OUT1 OUT2 LOAD1 SW2 SW5 LOAD2 SW4 OUT3 OUT1 through OUT3 are output pins. SW6 GND FUNCTION TABLE Input Signal 2 Circuit Operation Current Path IN1 IN2 IN3 STBY L H L H 1 CH forward mode SW1 →LOAD1 →SW4 L L H H 1 CH reverse mode SW3 →LOAD1 →SW2 L H H H 1 CH brake mode SW2 (Di2) →LOAD1 →SW4 H H L H 2 CH forward mode SW3 →LOAD2 →SW6 H L H H 2 CH reverse mode SW5 →LOAD2 →SW4 H H H H 2 CH brake mode SW4 (Di4) →LOAD2 →SW6 × L L H Stop mode × × × L Standby mode Charge pump ON/OFF µPD16823 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Ratings Unit When charge pump operates –0.5 to +6.5 V When charge pump does not operate –0.5 to +8.0 V VM –0.5 to +8.0 V Gate drive voltage VG 15 V Input voltage VIN –0.5 to VDD + 0.5 V H bridge drive current IDR DC ±0.5 A PW ≤ 200 ms, duty cycle ≤ 50% ±1.0 A PW ≤ 200 ms, single pulse ±3.0 A (Positive) supply voltage Symbol VDD Positive: MOS output stage forward current Negative: Output stage diode current Condition Power dissipation PD 1.0 W Operating temperature TA –30 to +60 °C Junction temperature Tj(peak) 150 °C Storage temperature Tstg –55 to +150 °C Ratings Unit When charge pump operates 2.5 to 6.0 V When charge pump does not operate 2.5 to 7.5 V VM –0.5 to +7.5 V VG 11 to 14 V Tj(peak) 125 °C RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Parameter (Positive) supply voltage Gate drive voltage Junction temperature Symbol VDD Condition ELECTRICAL CHARACTERISTICS (TA = –30 °C to +60 °C) Parameter VDD pin current VM pin current Symbol Condition IDD1 MAX. Unit VDD = 5 V, with all control pins at high level 2.0 mA IDD2 VDD = 5 V, with all control pins at low level 10 µA IM TA = 25 °C, with all control pins at low level 1.0 µA With all control pins at low level 10 µA 0.8 Ω H bridge ON resistance RON Control pin high-level input voltage VIH Control pin low-level input voltage VIL Charge pump circuit turn-off time tONC tONH H bridge circuit turn-ON time MIN. IDR = 0.5 A, VDD = VM = 5 V, TA = 25 °C TYP. 0.6 VDD × 0.6 V VDD × 0.2 V VDD = VM = 5 V 1.0 ms C1 = C2 = C2 = 10 nF 10 µs 5.0 µs IDR = 0.5 A H bridge circuit turn-OFF time tOFFH Regenerative diode voltage drop VF Control pin input pull-down resistance RIN IF = 0.5 A 1.0 25 50 V 75 kΩ 3 µPD16823 TYPICAL CHARACTERISTICS (TA = 25 °C) PT vs. TA Characteristics IDD vs. VDD Characteristics 1.2 1.6 All control pins: H level VDD pin current IDD (mA) Total dissipation PT (W) 1.0 0.8 0.6 0.4 1.2 0.8 0.4 0.2 0 25 50 75 100 125 0 150 Ambient temperature TA (˚C) H bridge ON resistance RON (Ω) VDD = 5 V Gate current IG (µA) 8 1.2 35 30 25 20 15 10 5 5 6 7 8 9 10 11 12 13 14 15 Gate aplied voltage VG (V) RON vs. TA Characteristics IDR = 0.5 A VDD = VM = 5 V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 Ambient temperature TA (˚C) VDD = 5 V 1.0 0.8 0.6 0.4 0.2 0 5 10 Gate applied voltage VG (V) 0.8 H bridge ON resistance RON (Ω) 6 RON vs. VG Characteristics IG vs. VG Characteristics 4 4 Supply voltage VDD (V) 40 0 2 60 80 15 C1 = C2 = C3 = 10 nF VDD = 3.0 to 6.0 V DC-DC converter C1 Battery VDD 7 STBY 18 OSC CIRCUIT 2 C2 3 20 C3 1 VG 19 VM 6 19 CHARGE PUMP CIRCUIT VM C4Note 1 to 10 µF CPU IN1 10 IN2 8 IN3 9 CONTROL CIRCUIT LEVEL SHIFT CIRCUIT D MOS FET H BRIDGE CIRCUIT (1.5 circuits) 15 OUT1 5 OUT2 M 17 OUT3 M APPLICATION CIRCUIT DIAGRAM VM = 0.5 to 7.5 V Pull-down resistor: 50 kΩ TYP. µPD16823GS IN1 L IN2 H L IN3 L H 12 14, 16 DGND PGND H H L H Note It is recommended to connect an external L capacitor of 1 to 10 µ F between VM and H GND to protect the gate of the D MOS FET 1CH Brake mode 2CH Forward mode 2CH Reverse mode 2CH Brake mode 5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. from voltage surge. µPD16823 1CH 1CH Forward mode Reverse mode µPD16823 PACKAGE DIMENSION 20 PIN PLASTIC SOP (300 mil) 20 11 P detail of lead end 1 10 A H J E K F G I C N D M L B M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 13.00 MAX. 0.512 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7±0.3 0.303±0.012 I 5.6 0.220 J 1.1 0.043 K 0.20 +0.10 –0.05 0.008 +0.004 –0.002 L 0.6±0.2 0.024 +0.008 –0.009 M 0.12 0.005 N 0.10 0.004 P 3° +7° –3° 3° +7° –3° P20GM-50-300B, C-4 6 µPD16823 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions shown below. For soldering methods and conditions other than those listed below, consult NEC. For details of the recommended soldering conditions, refer to Information Document “Semiconductor Device Mounting Technology Manual” (C10535E). Soldering Method Symbol of Recommended Soldering Soldering Condition Infrared reflow Package peak temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.) Number of times: 2 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine component (chlorine: 0.2 Wt% MAX.) IR35-00-2 VPS Package peak temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.) Number of times: 2 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine component (chlorine: 0.2 Wt% MAX.) VP15-00-2 Wave soldering Package peak temperature: 260 °C, Time: 10 seconds MAX., Preheating temperature: 120 °C MAX., Number of times: 1, Flux: Rosin-based flux with little chlorine component (chlorine: 0.2 Wt% MAX.) WS60-00-1 Note The number of days during which the product can be stored at 25 °C 65% RH MAX. after the dry pack was opened. Caution Do not use two or more soldering methods in combination. REFERENCE DOCUMENTS Document Name Document No. NEC Semiconductor Device Reliability/Quality Control System C11745E Guide to Quality Assurance for Semiconductor Devices MEI-1202 Safe Operating Area of Power MOS FET TEA-1037 7 µPD16823 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2