NTE2989 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D High Voltage D Repetitive Avalanche Rated D G Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Avalanche Current, Repetitive or Non−Repetitive (Tch +150C), IAR . . . . . . . . . . . . . . . . . . . . . 10A Avalanche Energy, EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.7mJ Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Symbol Test Conditions Min Typ Max Unit 600 − − V 3.5 4.0 4.5 V Tch = +25C − 10 500 A Tch = +125C − 0.2 1.0 mA V(BR)DSS ID = 1mA, VGS = 0V VGS(th) IDSS ID = 1mA, VDS = VGS VDS = 600V, VGS = 0V Rev. 10−13 Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Gate−Source Leakage Current Drain−Source On−State Resistance Symbol Test Conditions Min Typ Max Unit IGSS VGS = 30V, VDS = 0V − 10 100 nA RDS(on) ID = 4.5A, VGS = 10V − 0.85 1.0 Forward Transconductance gfs ID = 5A, VDS = 25V 3 6 − S Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz − 1100 1700 pF Output Capacitance Coss − 170 260 pF Reverse Transfer Capacitance Crss − 74 120 pF Turn−On Time, ton (ton = td(on) + tr) td(on) − 25 40 ns − 70 110 ns Turn−Off Time, toff (toff = td(off) + tf) td(off) − 75 120 ns tf − 40 60 ns VCC = 300V, ID = 10A, VGS = 10V, RGS = 10 tr Avalanche Capability IAV L = 100H, Tch = +25C 10 − − A Diode Forward On−Voltage VSD IF = 2 x IDR, VGS = 0V, Tch = +25C − 1.0 1.5 V IF = IDR, VGS = 0V, −dIF/dt = 100A/s, Tch = +25C − 500 − ns − 6.5 − C Reverse Recovery Time trr Reverse Recovery Charge Qrr .114 (2.9) .181 (4.6) .126 (3.2) Dia Max Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)