TI TPS62700

TPS62700
www.ti.com
SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
2 MHz 650 mA Step Down Converter for RF Power Amplifiers in
Tiny 8-pin WCSP Package
FEATURES
1
•
•
•
•
•
•
•
•
•
•
•
DESCRIPTION
High-Efficiency Step-Down Converter
Output Current up to 650 mA
VIN Range From 2.5 to 6.0 V
2.0-MHz Fixed-Frequency Operation
Dynamic Voltage Control With External
Reference (1.3 V to 3.09 V)
Fast Output-Voltage Settling (1.3 V to 3.09 V in
20 µs)
Soft Start
Overload Protection
Undervoltage Lockout
Thermal Protection
8-Pin WCSP Package
The TPS62700 device is a high-efficiency
synchronous step-down DC-DC converter optimized
for RF power-amplifier (PA) applications. It provides
up to 650 mA of output current from a single Li-Ion
cell.
The device converts input voltages from 2.5 to 6.0 V
down to an output voltage set by an external analog
reference voltage applied to the pin VCON. The
output voltage follows the external reference by an
internal gain of 2.5 within the limits of 1.3 V to 3.09 V.
This scheme adjusts the output voltage of the DC/DC
converter and therefore the output power of an
RF-PA.
The TPS62700 operates in fixed-frequency PWM
mode at a 2.0-MHz switching frequency to minimize
RF interference. This converter operates with only
three small external components; an input capacitor,
inductor and output capacitor.
APPLICATIONS
•
•
Cell Phones, Smart Phones
Battery-Powered RF Amplifier
The TPS62700 is available in a tiny 8 pin lead free
WCSP package for smallest solution size.
TYPICAL APPLICATION
VIN 2.5 V to 6.0 V
3.3 mH
10 mF
AVIN
PVIN
SW
FB
VOUT = 2.5 x VCON
1.3 V to 3.09 V
4.7 mF
EN
VCON
AGND
PGND
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2008, Texas Instruments Incorporated
TPS62700
www.ti.com
SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
TA
PART NUMBER (1)
PACKAGE
ORDERING
PACKAGE MARKING
–30°C to 85°C
TPS62700
WCSP 8 pin
TPS62700YZF
CKL
(1)
The package is available in tape on reel. Add R suffix to order quantities of 3000 parts per reel.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1)
VALUE
UNIT
–0.3 to 7
V
–0.3 to VIN +0.3, ≤ 7
V
–0.3 to 7
V
Input voltage range (2)
Voltage range at EN, VCON
(2)
Voltage on SW (2)
Peak output current (2)
internally limited
ESD rating (3)
HBM Human body model
2
Machine model
kV
200
V
TJ
Maximum operating junction temperature
–40 to 150
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
(2)
(3)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF
capacitor discharged directly into each pin.
DISSIPATION RATINGS (1)
(1)
(2)
(2)
PACKAGE
RθJA
POWER RATING
FOR TA ≤ 25°C
DERATING FACTOR
ABOVE TA = 25°C
YZF
110°C/W
900 mW
9 mW/°C
Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = [TJ(max) – TA] / θJA.
This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN, AVIN, PVIN
Supply voltage
2.5
6
V
TA
Operating ambient temperature
–40
85
°C
TJ
Operating junction temperature
–40
125
°C
2
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
ELECTRICAL CHARACTERISTICS
PVIN = AVIN = VIN = 3.6 V, EN = AVIN, TA = TJ = –40°C to 85°C typical values are at TA = 25°C (unless otherwise noted), see
parameter measurement information
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
AVIN, PVIN
Input voltage range
IOUT
IOUT
Output current
VIN 2.5 to 6 V
IQ
Operating quiescent current into AVIN
VCON = 1 V, FB = 0 V, VIN = 3.6V, device not
switching (1)
ISD
Shutdown current
EN = SW=VCON = AGND, AVIN = PVIN = 3.6V
max
= 650 mA
2.5
6
V
650
mA
0.1
0.3
mA
0.01
2
µA
V
ENABLE
VIH
High Level Input Voltage, EN
1.2
VIN
VIL
Low Level Input Voltage, EN
0
0.4
V
IIN
Input bias Current, EN
5
10
µA
V
EN = AVIN
CONTROL INPUT VCON
VVCON,
MIN
VCON Threshold forcing VFB, MIN
Falling VCON signal
0.484
0.52
0.556
VVCON,
MAX
VCON Threshold forcing VFB,MAX
Rising VCON signal
1.211
1.236
1.26
ZVCON
VCON Input resistance
CVCON
VCON Input capacitance
IIN
VCON Input current
VCON
Gain
Internal Gain VOUT/VCON
100
VCON = 1 V, f = 100 kHz
0.556 V ≤ VCON ≤ 1.208 V
V
kΩ
20
pF
10
µA
2.5
POWER SWITCH
100
140
230
PVIN = VGS = 3.6 V
Low-Side MOSFET on-resistance
PVIN = VGS = 3.6 V
Forward current limit MOSFET high side
and low side
PVIN = 3.6 V
935
1100
1200
mA
3 V < VIN < 5 V
1.7
2.0
2.3
MHz
RDS(ON)
ILIMF
TA = TJ = 25°C
High side MOSFET on-resistance
TA = TJ = –40°C to 85°C
TA = TJ = 25°C
270
180
200
TA = TJ = –40°C to 85°C
330
430
mΩ
mΩ
OSCILLATOR
fSW
Oscillator frequency
FEEDBACK/OUTPUT
VCON = 0.4 V
(2) (3)
1.25
1.3
1.35
V
Feedback voltage
VCON = 1.1 V
(2) (3)
2.693
2.75
2.835
V
Maximum feedback voltage
VCON = 1.4 V
(2) (3)
3.028
3.09
3.15
V
Linearity in VCON range 0.556 V to 1.208 V
(2) (3)
2
%
VOUT Rise time from 1.3 V to 3.09 V
VIN = 4.2 V, COUT = 4.7 µF, L = 3.3 µH, RLOAD = 5 Ω
20
30
VOUT Fall time from 3.09 V to 1.3 V
VIN = 4.2 V, COUT = 4.7 µF, L = 3.3 µH, RLOAD = 10 Ω
20
30
T_ON
Start-up Time
From Enable low to high transition until VOUT reaches
3.09 V, COUT = 4.7 µF, L = 3.3 µH, IOUT ≤ 1 mA
190
300
η
Efficiency (L = 3.3µH, DCR ≤ 100mΩ)
VIN = 3.6 V, VOUT = 1.3 V, IOUT = 150 mA
VFB,
MIN
VFB
VFB,
MAX
Linearity
TRESPONSE
Minimum feedback voltage
–2
(3) (4)
µs
(3) (4)
(5) (3)
VIN = 3.6 V, VOUT = 3.09 V, IOUT = 400 mA
87
(5) (3)
µs
%
95
VOUT_RIPPLE
Ripple voltage, PWM mode
VIN = 3 V to 4.5 V, VOUT = 1.3 V,
IOUT = 10 mA to 400 mA (3)
10
mVp-p
Line_tr
Line transient response
VIN = 600 mV step, over VIN range 3 V to 5.5 V TRISE =
TFALL = 10 µs, VOUT = 1.3 V,
IOUT = 100 mA (3)
50
mVpk
Load_tr
Load transient response
VIN = 3.1/3.6/4.5 V, VOUT = 1.3 V,
transients 0 mA to 100 mA,
TRISE = TFALL = 10 µs (3)
50
mVpk
(1)
(2)
(3)
(4)
(5)
Device operating in 100% duty cycle mode
2.5 V ≤ VIN ≤ 6 V, with VIN_MIN = VOUT + 0.5 V
The voltage need to be measured on the COUT using appropriate measurement probes. For the measurements, a proper PCB layout
and usage of recommended inductors and capacitors are essential. See parameter measurement information.
Rise/Fall time valid for VFB within specified limits.
Using appropriate inductor with R (DCR) less than 100 mΩ
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
PIN ASSIGNMENTS
CSP-8
CSP-8
TOP VIEW
BOTTOM VIEW
SW
SW
PVIN
A1
AVIN
B1
EN
C1
A2
C2
A3
PGND
PGND
A3
B3
AGND
AGND
B3
C3
FB
FB
C3
VCON
A2
C2
A1
PVIN
B1
AVIN
C1
EN
VCON
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
NO. CSP
PVIN
A1
PWR
VIN power supply input for the PMOSFET
AVIN
B1
PWR
VIN analog supply input for the internal analog circuitry
EN
C1
I
Enable input for the device. Set high for operation, low for shutdown. This pin must be terminated.
VCON
C2
I
Voltage control input. This pin controls the output voltage of the converter. The output voltage follows
VCON with a gain of 2.5 for 0.556 V ≤ VCON ≤ 1.208 V.
FB
C3
I
Analog Feedback Input Pin for the internal regulation loop. Connect this pin directly to the output
capacitor.
AGND
B3
I
Analog GND Pin for the internal analog circuitry.
PGND
A3
Power GND Pin for the NMOSFET
SW
A2
Switch Node to the internal PMOSFET and NMOSFET. Connect the external inductor between this pin
and the output capacitor.
FUNCTIONAL BLOCK DIAGRAM
EN
PV IN
AVIN
Current
Limit Comparator
Thermal
Shutdown
VCON
Limit
Clamp
Circuit
High Side
Error Amp
.
Gain
2.5
VREF
Control
Stage
Integrator
Zero-Pole
Amp.
Gate Driver
Anti
Shoot-Through
PWM
Comp.
SW
Through
Softstart
Limit
Low Side
FB
Sawtooth
Generator
2.0 Mhz
Oscillator
Current
Limit Comparator
AGND
4
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PGND
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
PARAMETER MEASUREMENT INFORMATION
VIN
10 mF
AVIN
3.3 mH
PVIN
SW
VOUT
4.7 mF/10 mF
FB
EN
VCON
AGND
PGND
L: LPS4018 3.3 mH, DCR 70 mW/VLF3014A 3.3 mH DCR 150 mW
CIN: GRM188R60J106M 10 mF Murata 0603 size
COUT: GRM188R60J106M 10 mF Murata 0603 size
GRM188Ru60J475K 4.7 mF Murata 0603 size
DETAILED DESCRIPTION
OPERATION
The TPS62700 step down converter operates at a 2.0-MHz fixed frequency using pulse-width modulation (PWM)
over the entire load range. This ensures low output-voltage ripple for RF-PA power applications.
In PWM operation, the converter uses a unique fast-response voltage-mode control scheme to achieve good line
and load regulation, allowing the use of small ceramic input and output capacitors.
At the beginning of each clock cycle initiated by the clock signal, the High-Side MOSFET switch is turned on. The
current flows from the input capacitor via the High-Side MOSFET switch through the inductor to the output
capacitor and load. During this phase, the current ramps up until the PWM comparator trips and the control logic
turns off the switch. The current limit comparator also turns off the switch when the current limit of the High-Side
MOSFET switch is exceeded. After a short dead time to prevent shoot-through, the Low-Side MOSFET rectifier
is turned on, and the inductor current ramps down. The current then flows from the inductor to the output
capacitor and to the load. It turns back to the inductor through the Low-Side MOSFET rectifier.
The next cycle is initiated by the clock signal turning off the Low-Side MOSFET rectifier and turning on the
High-Side MOSFET switch.
Dynamic Output Voltage Control VCON
The output voltage of TPS62700 can be dynamically adjusted with an external analog voltage applied to the pin
VCON. This voltage is typically supplied from an external DAC to adjust the supply voltage for the RF Power
amplifier, and therefore to determine the RF output power. The output voltage is set to : VOUT = 2.5 x VCON.
The output voltage can be set in the range between VFB, MIN (1.3 V) and VFB, MAX (3.09 V). The device provides
an internal voltage gain factor of 2.5. For dynamic voltage adjustment the VCON voltage range is between VCON,
MIN (0.52 V) and VCON, MAX (1.24 V). In Case the VCON voltage is out of this range, the output voltage is internally
limited to VFB, MIN (1.3 V) and VFB, MAX (3.09 V). This allows using the TPS62700 as a fixed output voltage
converter where the VCON Pin is connected, for example, to GND or VIN.
100% Duty Cycle Low Dropout Operation
The device starts to enter 100% duty-cycle mode when the input voltage approaches the nominal output voltage.
In order to maintain the output voltage, the High-Side MOSFET switch is turned on 100% for one or more cycles.
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With further decreases of VIN, the High-Side MOSFET switch is turned on completely. In this case, the converter
offers a low input-to-output voltage difference. This is particularly useful in battery-powered applications to
achieve longest operation time by taking full advantage of the entire battery voltage range. The minimum input
voltage to maintain regulation depends on the load current and output voltage, and can be calculated as:
VIN _ MIN = VOUT _ MIN + I OUT _ MAX ´ (R DSON _ MAX + R L )
(1)
With:
IOUT_MAX = maximum output current plus inductor ripple current
RDSON_MAX = maximum P-channel switch RDSON.
RL = DC resistance of the inductor
VOUT_MAX = nominal output voltage plus maximum output voltage tolerance
ENABLE
The device is enabled by setting the EN pin to high and at first the internal circuits are settled. Afterwards the
device activates the soft start circuit and ramps up the output voltage. The output voltage is ramped up from 0 V
to 3.09 V within typically 190 µs after the EN pin changes from low to high. A low signal at the EN pin sets the
device in Shutdown Mode with less than 2 µA current consumption.
SHORT-CIRCUIT PROTECTION
The High-Side and Low-Side MOSFET switches are protected with maximum output current = ILIMF in case a
short circuit on the output occurs. When the High-Side MOSFET switch reaches its current limit, it is turned off,
and the Low-Side MOSFET switch is turned on. The High-Side MOSFET switch can only turn on again, after the
current in the Low-Side MOSFET switch decreases below its current limit.
THERMAL SHUTDOWN
As soon as the junction temperature, TJ, exceeds 150°C (typical) the device goes into thermal shutdown. In this
mode, the High-Side and Low-Side MOSFETs are turned-off. The device continues its operation when the
junction temperature falls by typical 20°C.
UNDERVOLTAGE LOCKOUT
The device stops operation at typ. 1.5 V with falling input voltage and starts operation at typ. 1.7 V with rising
input voltage. This prevents malfunction of the device due to low input voltage.
TYPICAL CHARACTERISTICS
Typical Characteristic Graphs
FIGURE
Switching Frequency
vs Input Voltage (VIN)
Figure 1
RDSON
vs VIN, N-Channel
Figure 2
RDSON
vs VIN, P-Channel
Figure 3
Shutdown Current (ISD)
vs Temperature
Figure 4
Quiescent Current (IQ) into AVIN
vs VIN
Figure 5
EN High Threshold Voltage
vs VIN
Figure 6
Efficiency
vs Output Current
Figure 7
Efficiency
vs Output Current
Figure 8
Efficiency
vs Output Voltage
Figure 9
Efficiency
vs Output Voltage
Figure 10
Output Voltage
vs Output Current (VOUT = 1.3 V, TA = 25°C)
Figure 11
Output Voltage
vs Output Current (VOUT = 1.3 V, TA = –40°C)
Figure 12
Output Voltage
vs Output Current (VOUT = 1.3 V, TA = 85°C)
Figure 13
Output Voltage
vs Output Current (VOUT = 2.75 V, TA = 25°C)
Figure 14
6
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TYPICAL CHARACTERISTICS (continued)
Typical Characteristic Graphs (continued)
FIGURE
Output Voltage
vs Output Current (VOUT = 2.75 V, TA = –40°C)
Figure 15
Output Voltage
vs Output Current (VOUT = 2.75 V, TA = 85°C)
Figure 16
Output Voltage
vs Output Current (VOUT = 3.09 V, TA = 25°C)
Figure 17
Output Voltage
vs Output Current (VOUT = 3.09 V, TA = –40°C)
Figure 18
Output Voltage
vs. VCON Voltage (VI = 4.2 V)
Figure 19
Output Voltage
vs Output Current (VOUT = 3.09 V, TA = 85°C)
Figure 20
Output Voltage VOUT
vs VCON Voltage
Figure 21
VCON Max Threshold
VOUT TA = 25°C
Figure 22
VCON Max Threshold
VOUT TA = 85°C
Figure 23
VCON Max Threshold
VOUT TA =–40°C
Figure 24
VCON Min Threshold
VOUT TA = 25°C
Figure 25
VCON Min Threshold
VOUT TA = 85°C
Figure 26
VCON Min Threshold
VOUT TA =–40°C
Figure 27
Load Transient Response VOUT = 1.3 V
Figure 28
Load Transient Response VOUT = 3.09 V
Figure 29
Load Transient Response VOUT = 3.09 V
Figure 30
Load Transient Response VOUT = 3.09 V
Figure 31
PWM Mode Operation VOUT = 1.3 V
Figure 32
PWM Mode Operation VOUT = 3.09 V
Figure 33
Output Voltage Ripple At High Duty Cycle Operation
Figure 34
VCON Voltage Response
Figure 35
VCON Output Voltage Response And Synchronous Applied Load Transient
Figure 36
Startup VOUT 1.3 V
Figure 37
Startup VOUT 3.09 V
Figure 38
Line Transient Response
Figure 39
RDSON
vs
INPUT VOLTAGE VIN, N-CHANNEL
2.30
Switching Frequency - MHz
2.20
TA = 20°C
TA = 85°C
2.10
2.00
TA = 0°C
TA = -30°C
1.90
1.80
1.70
2.5
3
3.5
4
4.5
5
VI - Input Voltage - V
5.5
6
rDS(on) - Static Drain-Source on-State Resistance - W
SWITCHING FREQUENCY
vs
VIN
0.40
0.35
0.30
TA = 85°C
0.25
TA = 25°C
TA = -40°C
0.20
0.15
0.10
0.05
2.5
3
3.5
4
4.5
5
5.5
6
VI - Input Voltage - V
Figure 1.
Figure 2.
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SHUTDOWN CURRENT (ISD)
vs
TEMPERATURE
0.25
125
EN = 0 V
0.23
0.21
100
TA = 85°C
0.19
0.17
Shutdown Current - nA
rDS(on) - Static Drain-Source on-State Resistance - W
RDSON
vs
VIN, P-CHANNEL
TA = 25°C
0.15
TA = -40°C
0.13
0.11
0.09
VI = 5.5 V
75
VI = 4.5 V
VI = 3.5 V
50
VI = 2.5 V
25
0.07
0.05
2.5
3
3.5
4
4.5
5
VI - Input Voltage - V
5.5
0
-40
6
-20
0
20
40
60
TA - Ambient Temperature - °C
Figure 3.
Figure 4.
QUIESCENT CURRENT (IQ) INTO AVIN
vs
VIN
EN HIGH THRESHOLD VOLTAGE
vs
VIN
140
80
100
1
TA = -40°C
0.9
100
TA = 25°C
TA = 55°C
TA = 85°C
EN High Threshold - V
Quiescent Current - mA
120
80
60
40
TA = -40°C
TA = 0°C
0.8
0.7
TA = 55°C
3
3.5
4
4.5
5
VI - Input Voltage - V
5.5
6
0.4
2.5
3
3.5
4
4.5
5
5.5
6
VI - Input Voltage - V
Figure 5.
8
TA = 85°C
0.6
0.5
20
0
2.5
TA = 25°C
TA = 0°C
Figure 6.
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EFFICIENCY
vs
OUTPUT CURRENT
EFFICIENCY
vs
OUTPUT CURRENT
100
100
95
VI = 2.7 V
VI = 3 V
VI = 3.6 V
95
L = 3.3 mH,
DCR < 100 mW
90
Efficiency - %
90
Efficiency - %
VI = 3.3 V
VO = 1.3 V
85
VI = 4.2 V
80
VI = 5.5 V
75
VI = 3.6 V
VI = 4.2 V
85
VI = 5.5 V
80
75
70
70
65
65
VO = 3.09 V
60
L = 3.3 mH,
DCR < 100 mW
60
0
0.6
0.2
0.4
IO - Output Current - A
0
Figure 7.
Figure 8.
EFFICIENCY
vs
OUTPUT VOLTAGE
EFFICIENCY
vs
OUTPUT VOLTAGE
100
VI = 3.6 V,
L = 3.3 mH,
DRC < 100 mW
95
Efficiency - %
Efficiency - %
L = 3.3 mH,
DRC < 100 mW
90
90
RL = 5 W
85
RL = 10 W
RL = 15 W
80
RL = 5 W
RL = 10 W
85
RL = 15 W
80
75
70
1.3
0.6
100
VI = 4.2 V,
95
0.2
0.4
IO - Output Current - A
75
1.5
1.7
1.9 2.1 2.3 2.5 2.7
VO - Output Voltage - V
2.9
3.1
70
1.3
1.5
Figure 9.
1.7
1.9 2.1 2.3 2.5 2.7
VO - Output Voltage - V
2.9
3.1
Figure 10.
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OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.339
1.339
TA = 25°C,
VCON = 0 V,
VO = 1.3 V
1.326
VO - Output Voltage - V
VO - Output Voltage - V
1.326
1.313
1.3
VI = 2.7 V,
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
1.287
1.274
1.313
1.3
VI = 2.7 V,
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
1.287
1.274
1.261
1.261
0
0.2
0.4
IO - Output Current - A
0.6
0
0.4
IO - Output Current - A
Figure 12.
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
0.6
2.833
TA = 85°C,
VCON = 0 V,
VO = 1.3 V
1.313
1.3
VI = 2.7 V,
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
1.287
1.274
TA = 25°C,
VCON = 1.1 V,
VO = 2.75 V
2.805
VO - Output Voltage - V
1.326
2.778
2.750
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
2.723
2.695
1.261
2.668
0
0.2
0.4
IO - Output Current - A
0.6
0
Figure 13.
10
0.2
Figure 11.
1.339
VO - Output Voltage - V
TA = -40°C,
VCON = 0 V,
VO = 1.3 V
0.2
0.4
IO - Output Current - A
0.6
Figure 14.
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OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
2.833
2.833
TA = -40°C,
VCON = 1.1 V,
VO = 2.75 V
2.805
VO - Output Voltage - V
VO - Output Voltage - V
2.805
2.778
2.750
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
2.723
2.695
TA = 85°C,
VCON = 1.1 V,
VO = 2.75 V
2.778
2.750
VI = 3.3 V,
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
2.723
2.695
2.668
2.668
0
0.2
0.4
0.6
0
0.2
IO - Output Current - A
Figure 15.
Figure 16.
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
3.09
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
3.121
3.09
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
3.059
3.028
3.028
2.997
0
TA = -40°C,
VCON = 1.4 V,
VO = 3.09 V
3.152
VO - Output Voltage - V
VO - Output Voltage - V
TA = 25°C,
VCON = 1.4 V,
VO = 3.09 V
3.121
3.059
0.6
3.183
3.183
3.152
0.4
IO - Output Current - A
2.997
0.2
0.4
IO - Output Current - A
0.6
0
Figure 17.
0.2
0.4
IO - Output Current - A
0.6
Figure 18.
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VOUT OUTPUT VOLTAGE
vs
VCON VOLTAGE
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
3.2
3.183
VI = 4.2 V
RL = 8 Ω
3.0
3.152
2.8
2.6
VO - Output Voltage - V
VO − Output Voltage − V
TA = 85°C,
VCON = 1.4 V,
VO = 3.09 V
2.4
2.2
TA = −40°C,
TA = 25°C,
TA = 85°C
2.0
1.8
3.121
3.09
VI = 3.6 V,
VI = 4.2 V,
VI = 5.5 V
3.059
1.6
3.028
1.4
1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
2.997
0
0.2
0.4
IO - Output Current - A
VCON − Voltage Control − V
Figure 19.
Figure 20.
OUTPUT VOLTAGE VOUT
vs
VCON VOLTAGE
VCON MAX THRESHOLD
vs
VOUT TA = 25°C
3.150
3.150
TA = 25°C,
TA = 25°C,
RL = 8W
3.130
VO - Output Voltage - V
VO - Output Voltage - V
3.130
3.110
VI = 4.5 V
3.090
3.070
VI = 5.5 V
VI = 3.5 V
3.050
3.030
1.230
12
0.6
RL = 8W
3.110
VI = 4.5 V
3.090
3.070
VI = 5.5 V
VI = 3.5 V
3.050
1.232
1.234
1.236
1.238
VCON - Max Threshold - V
Figure 21.
1.240
3.030
1.230
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1.232
1.234
1.236
1.238
VCON - Max Threshold - V
Figure 22.
1.240
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VCON MAX THRESHOLD
vs
VOUT TA = 85°C
VCON MAX THRESHOLD
vs
VOUT TA = –40°C
3.150
3.150
TA = -40°C,
TA = 25°C,
R L = 8W
3.130
VO - Output Voltage - V
VO - Output Voltage - V
3.130
3.110
VI = 4.5 V
3.090
VI = 5.5 V
3.070
VI = 3.5 V
R L = 8W
3.110
VI = 4.5 V
3.090
VI = 5.5 V
3.070
3.050
3.050
3.030
1.230
1.232
1.234
1.236
1.238
VCON - Max Threshold - V
3.030
1.230
1.240
1.232
VCON MIN THRESHOLD
vs
VOUT TA = 25°C
1.310
TA = 25°C,
VI = 4.5 V
1.304
1.302
VI =2.5 V
VI = 3.5 V
1.298
1.296
1.240
TA = 85°C,
RL = 8W
1.304
1.300
1.298
1.292
1.292
0.525
VI = 2.5 V
VI = 3.5 V
1.296
1.294
0.517
0.519
0.521
0.523
VCON - Max Threshold - V
Figure 25.
VI = 5.5 V
VI = 4.5 V
1.302
1.294
1.290
0.515
1.238
1.306
VI = 5.5 V
VO - Output Voltage - V
VO - Output Voltage - V
1.308
R L = 8W
1.306
1.236
VCON MIN THRESHOLD
vs
VOUT TA = 85°C
1.310
1.308
1.234
VCON - Max Threshold - V
Figure 24.
Figure 23.
1.300
VI = 3.5 V
1.290
0.515
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0.517
0.519
0.521
0.523
0.525
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VCON - Min Threshold - V
Figure 26.
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
VCON MIN THRESHOLD
vs
VOUT TA =–40°C
LOAD TRANSIENT RESPONSE VOUT = 1.3 V
1.310
TA = -40°C,
1.308
RL = 8W
1.306
VO - Output Voltage - V
VI = 3.6 V,
L = 3.3 mH, CO = 4.7 mF
VO = 1.3 V,
IO = 50 mA to 250 mA,
VO = 50 mV/div
VCON = AGND
VI = 4.5 V
VI = 5.5 V
1.304
IO = 200 mA/div
1.302
1.300
VI = 2.5 V
VI = 3.5 V
1.298
250 mA
1.296
IO = 200 mA/div
1.294
50 mA
1.292
1.290
0.515
0.517
0.519
0.521
0.523
VCON - Min Threshold - V
Figure 27.
LOAD TRANSIENT RESPONSE VOUT = 3.09
VI = 4.2 V,
L = 3.3 mH, CO = 4.7 mF
VO = 3.09 V,
IO = 100 mA to 400 mA,
VCON = AVIN
VO = 100 mV/div
Time base - 10 ms/div
0.525
Figure 28.
LOAD TRANSIENT RESPONSE VOUT = 3.09 V
VI = 4.2 V,
L = 2.2 mH, CO = 10 mF
VO = 3.09 V,
IO = 100 mA to 400 mA,
VCON = AVIN
VO = 100 mV/div
IO = 200 mA/div
IO = 200 mA/div
400 mA
400 mA
IO = 200 mA/div
IO = 200 mA/div
100 mA
Time base - 10 ms/div
Time base - 10 ms/div
Figure 29.
14
100 mA
Figure 30.
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LOAD TRANSIENT RESPONSE VOUT = 3.09 V
VI = 4.2 V,
VO = 3.09 V,
IO = 100 mA to 400 mA,
VCON = AVIN
PWM MODE OPERATION VOUT = 1.3 V
L = 3.3 mH, CO = 10 mF
VO = 1.3 V
VO = 100 mV/div
VI = 3.6 V,
IL = 200 mA,
VCON = 0 V,
L = 3.3 mH, CO = 4.7 mF
VO = 10 mV/div
IO = 200 mA/div
IO = 100 mA/div
SW 2 V/div
400 mA
IO = 200 mA/div
100 mA
Time base - 10 ms/div
Time base - 200 ns/div
Figure 31.
Figure 32.
PWM MODE OPERATION VOUT = 3.09 V
OUTPUT VOLTAGE RIPPLE AT HIGH DUTY CYCLE
OPERATION
VO = 10 mV/div
VI = 3.6 V,
IL = 200 mA,
VCON = VI,
VO = 10 mV/div
VO = 3.09 V
IO = 100 mA/div
L = 3.3 mH, CO = 4.7 mF
VI = 3.26 V,
IL = 200 mA,
VCON = VI,
VO = 3.09 V
IO = 200 mA/div
L = 3.3 mH, CO = 4.7 mF
SW 2 V/div
SW 2 V/div
Time base - 200 ns/div
Time base - 1 ms/div
Figure 33.
Figure 34.
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
VCON OUTPUT VOLTAGE RESPONSE AND
SYNCHRONOUS APPLIED LOAD TRANSIENT
VCON VOLTAGE RESPONSE
1.4 V
1.4 V
VCON = 1 V/div
VCON = 1
0V
0V
VO = 3.09 V
VO = 3.09 V
VO 1 V/div
VO = 1 V/div
VO = 1.3 V
VO = 1.3 V
VI = 4.2 V,
IL = 100 mA/400 mA,
VCON = 0 V/1.4 V
ICOIL = 500 mA/div
ICOIL = 1000 mA/div
VI = 4.2 V,
RL = 10 W
400 mA
L= 3.3 mH, CO = 4.7 mF
IO = 500 mA/div
100 mA
Time base - 25 ms/div
Time base - 50 ms/div
Figure 35.
Figure 36.
STARTUP VOUT 1.3 V
STARTUP VOUT 3.09 V
EN = 5 V/div
EN = 5 V/div
3.09 V
1.3 V
VI = 4.2 V,
VI = 3.6 V,
RL = 10 W,
VCON = 0 V,
VO = 1.3 V
VO = 500 mV/div
0V
0V
II = 500 mA/div
II = 500 mA/div
ICOIL = 500 mA/div
ICOIL = 500 mA/div
Time base - 40 ms/div
Time base - 40 ms/div
Figure 37.
16
VO = 1 mV/div
RL = 10 W,
VCON = 1.4 V,
VO = 3.09 V
Figure 38.
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LINE TRANSIENT RESPONSE
VI = 500 mA/div
4.2 V
VI = 3.6 V to 4.2 V,
IL = 100 mA,
VCON = 1.4 V,
L = 3.3 mH,
3.6V
CO = 10 mF,
VO = 3.09 V
VO = 10 mV/div
ICOIL = 100 mA/div
Time base - 40 ms/div
Figure 39.
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
APPLICATION INFORMATION
VI 2.5 V to 6.0 V
3.3 mH
10 mF
AVIN
VO = 2.5 x VCON
1.3 V to 3.09 V
PVIN
SW
Controller
4.7 mF
FB
ON/OFF
EN
DAC
VCON
AGND
PGND
Figure 40. TPS62700 Application Circuit
VI 3.3 V to 6 V
10 mF
AVIN
2.2/2.7/3.3 mH
PVIN
VO 3.09 V
SW
FB
10 mF
EN
VCON
AGND
PGND
Figure 41. TPS62700 With Fixed VOUT 3.09 V
18
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
OUTPUT FILTER DESIGN (INDUCTOR AND OUTPUT CAPACITOR)
Inductor Selection
The inductor value has a direct effect on the ripple current. The selected inductor must have adequate ratings for
dc resistance and saturation current. The inductor ripple current (ΔIL) decreases with higher inductance and
increases with higher VIN or VOUT.
Equation 2 calculates the maximum inductor current under static load conditions. The saturation current of the
inductor should be rated higher than the maximum peak inductor current as calculated with Equation 3. This is
recommended because during heavy load transients, the inductor current rises above the calculated value.
V
1 - OUT
VIN
DIL = VOUT ´
I´ f
(2)
DI L
IL _ MAX = IOUT _ MAX +
2
(3)
Where
f = Switching Frequency (2.0 MHz typical)
L = Inductor Value
ΔIL = Peak to Peak inductor ripple current
IL_MAX = Maximum Inductor current
A good approach is to select the inductor current and inductance rating for the maximum switch current limit of
the TPS62700.
Accepting larger values of ripple current allows the use of lower inductance values, but results in higher
output-voltage ripple, greater core losses, and lower output-current capability.
The total losses of the inductor have a strong impact on the efficiency of the DC/DC conversion and consist of
both the losses in the dc resistance L) and the following frequency-dependent components:
• The losses in the core material (magnetic hysteresis loss, especially at high switching frequencies)
• Additional losses in the conductor from the skin effect (current displacement at high frequencies)
• Magnetic-field losses of the neighboring windings (proximity effect)
• Radiation losses
Table 1. List Of Inductors
DIMENSIONS
INDUCTOR Series
SUPPLIER
2.5 × 2.0 × 1.2
KSLI-252012AG
2.5 × 2.0 × 1.2
MIPSA2520
FDK
Murata
2.5x2.0x1.2
LQM2HPN
2.8 × 2.6 × 1.4
VLF3014AT
3.9 × 3.9 × 1.7
LPS4018
Hitachi Metals
TDK
Coilcraft
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Output Capacitor Selection
The advanced, fast-response, voltage-mode control scheme of the TPS62700 allows the use of tiny ceramic
capacitors. Ceramic capacitors with low ESR values have the lowest output-voltage ripple and are
recommended. The output capacitor requires either an X7R or X5R dielectric. Y5V and Z5U dielectric capacitors,
aside from their wide variation in capacitance over temperature, become resistive at high frequencies.
At nominal load current, the device operates in PWM mode, and the RMS ripple current is calculated as:
V
1 - OUT
VIN
1
IRMSCout = VOUT ´
´
L´f
2´ 3
(4)
At nominal load current, the device operates in PWM mode and the overall output voltage ripple is the sum of the
voltage spike caused by the output capacitor ESR plus the voltage ripple caused by charging and discharging the
output capacitor:
V
1 - OUT
æ
ö
VIN
1
DVOUT = VOUT ´
´ çç
+ ESR ÷÷
L´f
è 8 ´ C out ´ f
ø
(5)
Input Capacitor Selection
Because of the nature of the buck converter due to its pulsating input current, a low-ESR input capacitor is
required for best input-voltage filtering, and to minimize interference with other circuits caused by high
input-voltage spikes. For most applications, a 10-µF ceramic capacitor is recommended. The input capacitor can
be increased without any limit for better input-voltage filtering.
Take care when using only small ceramic input capacitors. When a ceramic capacitor is used at the input and the
power is being supplied through long wires, such as from a wall adapter, a load step at the output or VIN step on
the input can induce ringing at the VIN pin. This ringing can couple to the output and be mistaken as loop
instability or could even damage the part by exceeding the maximum ratings.
List Of Capacitors
20
Size
Capacitance µF
0603
0603
TYPE
SUPPLIER
4.7
GRM188R60J475K
Murata
10
GRM188R60J106M
Murata
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SLVS784A – DECEMBER 2007 – REVISED MARCH 2008
LAYOUT CONSIDERATIONS
As for all switching power supplies, the PCB layout is an important step in the design. Proper function of the
device demands careful attention to PCB layout. Care must be taken in board layout to achieve the specified
performance. If the layout is not carefully done, the regulator could show poor line and/or load regulation, stability
issues, as well as EMI problems. It is critical to provide a low-inductance, low-impedance ground path. Therefore,
use wide, short traces for the main current paths. The input capacitor should be placed as close as possible to
the IC pins PVIN and PGND. The inductor and output capacitor should be placed close to SW and PGND.
The FB line should be connected directly to the output capacitor and routed away from noisy components and
traces (e.g., SW line).
VOUT
COUT
G
D
N
VCON
ENABLE
0è
L
CIN
VIN
Figure 42. Suggested Board Layout
PACKAGE SUMMARY
CHIP SCALE PACKAGE
(BOTTOM VIEW)
CHIP SCALE PACKAGE
(TOP VIEW)
SW
PGND
D
A3
AGND
B3
FB
C3
A2
C2
A1
PV IN
B1
AVIN
C1
EN
VCON
E
YMLLLL
CKL S
A1
Code:
- YM: 2 digit year/month date code
- LLLL: lot trace code
- S: assembly site code
- CKL: TPS62700 device code
PACKAGE DIMENSIONS
Dimension D
Dimension E2
1,64 mm ± 0.03mm
1,5 mm ± 0.03
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PACKAGE MATERIALS INFORMATION
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TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS62700YZFR
Package Package Pins
Type Drawing
SPQ
DSBGA
3000
YZF
8
Reel
Reel
Diameter Width
(mm) W1 (mm)
178.0
8.4
Pack Materials-Page 1
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
1.6
1.74
0.81
4.0
W
Pin1
(mm) Quadrant
8.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS62700YZFR
DSBGA
YZF
8
3000
217.0
193.0
35.0
Pack Materials-Page 2
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