DC COMPONENTS CO., LTD. 2SC1623 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage .091(2.30) .067(1.70) Unit .045(1.15) .034(0.85) .118(3.00) .110(2.80) VEBO 5 V Collector Current IC 100 mA Total Power Dissipation PD 200 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 60 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=60V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=5V, IC=0 VCE(sat) - - 0.3 V IC=100mA, IB=10mA (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VBE(sat) - - 1 V IC=100mA, IB=10mA VBE(on) 0.55 - 0.65 V IC=1mA, VCE=6V hFE 90 200 600 - IC=1mA, VCE=6V fT 250 - - MHz IC=10mA, VCE=6V - 3 - pF Cob 380µs, Duty Cycle 2% Classification of hFE Rank L4 L5 L6 L7 Range 90~180 135~270 200~400 300~600 VCB=6V, f=1MHz, IE=0