DCCOM 2SC1623

DC COMPONENTS CO., LTD.
2SC1623
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
SOT-23
Pinning
.020(0.50)
.012(0.30)
1 = Base
2 = Emitter
3 = Collector
3
.108(0.65)
.089(0.25)
.063(1.60)
.055(1.40)
1
2
Absolute Maximum Ratings(TA=25oC)
Symbol
Rating
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
.091(2.30)
.067(1.70)
Unit
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
VEBO
5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
BVCBO
60
-
-
V
Test Conditions
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
IE=100µA, IC=0
IC=100µA, IE=0
Collector Cutoff Current
ICBO
-
-
0.1
µA
VCB=60V, IE=0
Emitter Cutoff Current
IEBO
-
-
0.1
µA
VEB=5V, IC=0
VCE(sat)
-
-
0.3
V
IC=100mA, IB=10mA
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
(1)
DC Current Gain
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
VBE(sat)
-
-
1
V
IC=100mA, IB=10mA
VBE(on)
0.55
-
0.65
V
IC=1mA, VCE=6V
hFE
90
200
600
-
IC=1mA, VCE=6V
fT
250
-
-
MHz
IC=10mA, VCE=6V
-
3
-
pF
Cob
380µs, Duty Cycle
2%
Classification of hFE
Rank
L4
L5
L6
L7
Range
90~180
135~270
200~400
300~600
VCB=6V, f=1MHz, IE=0