2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=1V, IC=100mA 90 hFE(2)* VCE=1V, IC=1A 50 Collector-emitter saturation voltage VCE(sat)* IC=1A,IB=0.1A 0.4 V Base-emitter saturation voltage VBE(sat)* IC=1A,IB=0.1A 1.2 V DC current gain 400 Base -emitter voltage VBE* VCE=6V, IC=10mA Transition frequency fT VCE=6V,IC=10mA 130 MHz VCB=6V, IE=0, f=1MHz 22 pF Collector output capacitance Cob 0.6 0.7 *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE（1） RANK CM CL CK RANGE 90–180 135–270 200–400 MARKING CM CL CK １ JinYu semiconductor www.htsemi.com V