DC COMPONENTS CO., LTD. 2SA950 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Total Power Dissipation PD 600 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -35 - - V Collector-Emitter Breakdown Voltage BVCEO -30 - - V IC=-2mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 ICBO - - -0.1 µA VCB=-35V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width IEBO - - -0.1 µA VEB=-5V, IC=0 VCE(sat) - -0.28 -0.7 V IC=-500mA, IB=-20mA VBE(sat) - - -1.3 V IC=-500mA, IB=-20mA hFE1 45 - - - IC=-5mA, VCE=-1V hFE2 100 - 320 - IC=-100mA, VCE=-1V hFE3 40 - - - IC=-500mA, VCE=-1V fT - 120 - MHz IC=-10mA, VCE=-5V - 19 - pF Cob 380µs, Duty Cycle Classification of hFE2 Rank O Y Range 100~200 160~320 Test Conditions IC=-100µA, IE=0 2% VCE=-10V, f=1MHz, IE=0