SANKEN 2SB1382

(2 k Ω) (80Ω) E
2SB1382
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082)
hFE
VCE=–4V, IC=–8A
2000min
V
IB
–1
A
VCE(sat)
IC=–8A, IB=–16mA
–1.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=–8A, IB=–16mA
–2.5max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
50typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
350typ
pF
Tstg
3.3
3.0
V
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
5
–8
–10
5
–16
16
0.8typ
1.8typ
1.0typ
1.05 +0.2
-0.1
0
I B =–1.5m A
0
–1
–2
–3
–4
–5
–8A
–4A
–1
0
–0.5
–6
–1
–10
(V C E =–4V)
Typ
5000
1000
–10
–16
10000
12
5˚C
5000
25
˚C
–
˚C
30
1000
500
–0.3
–0.5
–1
f T – I E Characteristics (Typical)
–5
–10
–16
100
10
P c – T a Derating
m
10
s
0µ
s
s
DC
at
40
si
nk
16
he
10
ite
5
fin
Without Heatsink
Natural Cooling
In
–1
–0.5
60
ith
Co lle ctor Cu rren t I C (A)
1m
–5
–0.05
–0.03
–3
1000
W
1
10
Time t(ms)
–0.1
0.5
1
80
–10
Emitter Current I E (A)
p)
0.2
–50
Typ
0
0.05 0.1
0.5
Safe Operating Area (Single Pulse)
50
–2.4
1
(V C E =–12V)
100
–2
3
Collector Current I C (A)
Collector Current I C (A)
Cut- off F req uency f T (MH Z )
Transient Thermal Resistance
D C Cur r ent Gai n h F E
D C Cur r ent Gai n h F E
20000
10000
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
20000
–5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–1
0
–100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–0.5
–8
–4
Collector-Emitter Voltage V C E (V)
500
–0.3
Tem
I C =–16A
–12
se
–2
(V C E =–4V)
(Ca
–10
–16
˚C
–3m A
E
125
–6 mA
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
–3
M aximu m Power Dissipat io n P C (W)
Collector Current I C (A)
–20
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
A
–12m
4.4
B
θ j - a ( ˚ C/ W)
A
0.65 +0.2
-0.1
5.45±0.1
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
0m
–4
–
m
20
0.8
2.15
1.5
VCC
(V)
–26
1.75
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
)
A
mA
–120min
emp
–16(Pulse–26)
IC
–10max
VEB=–6V
IC=–10mA
3.45 ±0.2
mp)
V(BR)CEO
5.5±0.2
se T
IEBO
V
15.6±0.2
e Te
V
–6
µA
(Cas
–120
VEBO
–10max
–30˚C
VCEO
VCB=–120V
0.8±0.2
ICBO
Unit
5.5
V
2SB1382
1.6
–120
C
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
(Ca
VCBO
Symbol
25˚C
Unit
9.5±0.2
■Electrical Characteristics
2SB1382
Symbol
Equivalent circuit
Application : Chopper Regulator, DC Motor Driver and General Purpose
23.0±0.3
■Absolute maximum ratings (Ta=25°C)
B
16.2
Darlington
20
Without Heatsink
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
50
100
150
Ambient Temperature Ta(˚C)
43