SANKEN 2SC3679

2SC3679
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
5(Pulse10)
A
µA
800min
V
hFE
VCE=4V, IC=2A
10 to 30
19.9±0.3
IC
VEB=7V
IC=10mA
2.5
A
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=2A, IB=0.4A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
75typ
pF
V
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
125
2
10
–5
0.3
–1
1max
5max
1max
2
I B =100mA
1
0
1
0
2
3
4
–55˚C (Case Temp)
25˚C (Case Temp)
e Temp)
125˚C (Cas
Ca
125˚C (
V C E (sat)
0
0.03 0.05
0.1
0.5
Collector-Emitter Voltage V C E (V)
1
5
0
10
t on •t stg • t f – I C Characteristics (Typical)
25˚C
–55˚C
10
1
5
5
t s tg
V C C 250V
I C :I B 1 :–I B2
=2:0.3:1Const.
1
tf
0.5
t on
0.2
0.1
0.5
s
0.5
0.1
100
1000
P c – T a Derating
100
500
Collector-Emitter Voltage V C E (V)
1000
Collector Curren t I C (A)
nk
100
si
0.01
50
50
at
Collector-Emitter Voltage V C E (V)
1000
he
500
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than1%
ite
C)
0.1
fin
1
In
5
100
10
ith
=2
50
1
Time t(ms)
0.5
0.05
0.05
68
5
5
s
Without Heatsink
Natural Cooling
10
1.2
10
0µ
( Tc
1
1.0
1
M aximum Power Dissipa ti on P C (W)
10
DC
Collector Curren t I C ( A)
s
0.8
W
0m
1m
s
µs
10
m
0.5
0.01
5
1
10
10
0.6
θ j-a – t Characteristics
20
20
5
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
0.1
Transient Thermal Resistance
t on• t s t g • t f (µ s)
125˚C
Switching T im e
DC Cur rent Gain h F E
50
0.5
0
Base-Emittor Voltage V B E (V)
10
0.1
mp)
1
se
(V C E =4V)
0.05
2
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
e Te
V B E (sat)
1
3
(Cas
200mA
4
125˚C
3
2
θ j - a ( ˚ C/ W)
Collector Current I C (A)
300mA
Collector Current I C (A)
400 mA
(V C E =4V)
5
Te
m p)
25˚
C
–5 5 ˚C
500mA
4
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
5
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
600mA
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
700mA
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
IB
Tstg
a
p)
V(BR)CEO
2.0±0.1
ase Tem
V
4.8±0.2
–55˚C (C
7
100max
15.6±0.4
9.6
1.8
VEBO
µA
5.0±0.2
V
IEBO
100max
)
VCEO
800
VCB=800V
Temp
ICBO
(Case
V
Unit
25˚C
900
2SC3679
2.0
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Symbol
4.0
Unit
4.0max
■Electrical Characteristics
(Ta=25°C)
2SC3679
Symbol
20.0min
■Absolute maximum ratings
Application : Switching Regulator and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150