SANKEN 2SC4434

2SC4434
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
100max
µA
VCEO
400
V
IEBO
VEB=10V
100max
µA
VEBO
10
V
V(BR)CEO
IC=25mA
400min
V
15(Pulse30)
A
hFE
VCE=4V, IC=8A
10 to 25
5
A
VCE(sat)
IC=8A, IB=1.6A
0.7max
PC
120(Tc=25°C)
W
VBE(sat)
IC=8A, IB=1.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
135typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
25
8
10
–5
1.6
–3.2
0.5max
2.0max
0.15max
3
Switching Ti me
DC Cur rent Gain h F E
25˚C
10
1
0.1
0.5
Collector Current I C (A)
5
10 15
t on
0.1
tf
0.05
0.5
1
5
10
15
0µ
p)
p)
25˚
C (C
ase
Tem
p)
em
Tem
eT
se
0.5
0.1
1
10
100
1000
P c – T a Derating
120
Collector-Emitter Voltage V C E (V)
500
Collector Cur rent I C (A)
nk
100
si
50
at
10
he
0.1
5
ite
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=–1A
Duty:less than 1%
fin
500
1
In
0.1
5
100
ith
Without Heatsink
Natural Cooling
Collector-Emitter Voltage V C E (V)
Ca
as
1
W
1
104
15
2
s
5
100
1.0
Time t(ms)
10
50
0.5
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
10
10
0
Base-Emittor Voltage V B E (V)
40
5
(C
0˚C
0
10
Collector Current I C (A)
10
0.5
4
C(
)
7 5 ˚C
5
t s tg
Safe Operating Area (Single Pulse)
Collect or Cur ren t I C (A)
1
1 V C C 200V
I C :I B1 :–I B 2 =5:1:2
0.5
Collector Current I C (A)
40
6
2
5
t o n • t s tg • t f ( µ s)
150˚C
75˚C
0.5
8
V C E (sat)
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
0.1
0˚
10
Collector Current I C (A)
h FE – I C Temperature Characteristics (Typical)
5
0.05
emp
15
Collector-Emitter Voltage V C E (V)
50
eT
1
0
0.05
4
Temp)
θ j - a (˚ C/W)
2
ase
50˚C (C
Transient Thermal Resistance
1
0
e Temp)
25˚C (Cas
e Temp)
as
(C
75˚C
M aximum Power Dissipa ti on P C (W)
0
V B E (sat)
˚C
I B =100m A
2
1
as
200m A
4
12
25
400mA
6
(V C E =4V)
15
14
(C
600 mA
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
C
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
Collector Current I C (A)
8
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
1A
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
A
2
3
5.45±0.1
RL
(Ω)
1.2
ø3.2±0.1
1.05 +0.2
-0.1
VCC
(V)
10
2.0±0.1
V
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
4.8±0.2
b
IB
Tstg
a
75˚
IC
15.6±0.4
9.6
1.8
Unit
VCB=500V
5.0±0.2
2SC4434
ICBO
2.0
Conditions
V
4.0
Unit
500
19.9±0.3
2SC4434
VCBO
20.0min
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Switching Regulator, Lighting Inverter, and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150