SANKEN 2SC3833

2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C)
External Dimensions MT-100(TO3P)
100max
µA
IEBO
VEB=10V
100max
µA
V(BR)CEO
IC=25mA
400min
V
hFE
VCE=4V, IC=7A
10 to 30
4
A
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=7A, IB=1.4A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
105typ
pF
V
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
28.5
7
10
–5
0.7
–1.4
1.0max
3.0max
0.5max
I B =100mA
2
1
0
2
3
12
5˚
C
–5
V C E (sat)
0.05 0.1
Collector-Emitter Voltage V C E (V)
0.5
1
5
5˚
0
10
t on •t stg • t f – I C Characteristics (Typical)
8
t o n • t st g• t f ( µ s)
50
–30˚C
10
1
5
10 12
t s tg
V C C 200V
I C :I B1 :–I B 2 =10:1:2
1
0.5
t on
tf
0.1
0.5
1
10
1
10
)
P c – T a Derating
100
10
50
100
Collector-Emitter Voltage V C E (V)
500
nk
0.01
5
si
500
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
50
at
0.1
he
Collector Cur rent I C (A)
1
ite
Collector-Emitter Voltage V C E (V)
1000
fin
0.01
100
100
In
)
Collect or Curr ent I C ( A)
0.1
Time t(ms)
0.5
0.05
50
0.5
ith
C
0.05
10
1.2
W
25
Without Heatsink
Natural Cooling
5
10
5
0.5
0.1
5
10
ms
c=
(T
1
1.0
s
1ms
10
DC
5
0.8
1
30
0µ
0.6
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.4
Collector Current I C (A)
Collector Current I C (A)
30
0.2
θ j-a – t Characteristics
Maximu m Power Di ssip ation P C (W)
0.5
5
Transient Thermal Resistance
25˚C
Sw it ching Time
DC Curr ent Gain h FE
125˚C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
p)
2
C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
4
Temp
125
6
Tem
emp)
se T
˚C (Ca
8
se
e Temp)
25˚C (Cas
0
0.02
4
Temp)
θ j- a ( ˚ C/ W)
0
–55˚C (Case
(Ca
200mA
4
1
˚C
6
10
V B E (sat)
125
400m A
(V C E =4V)
12
Collector Current I C (A)
8
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
as
e
2 5 Temp
)
˚C
60 0m A
1.4
E
(C
80 0m A
10
Collector Current I C (A)
A
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
1000m
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
12
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
IB
Tstg
a
mp)
A
(Case
12(Pulse24)
–55˚C
V
2.0±0.1
e Te
V
10
4.8±0.2
(Cas
400
VEBO
15.6±0.4
9.6
25˚C
VCEO
4.0
ICBO
19.9±0.3
V
1.8
VCB=500V
500
5.0±0.2
Unit
2.0
2SC3833
VCBO
IC
(Ta=25°C)
Conditions
Symbol
Unit
4.0max
■Electrical Characteristics
2SC3833
20.0min
Symbol
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
73