SANKEN 2SC4300

2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
IC=10mA
800min
V
5(Pulse10)
A
hFE
VCE=4V, IC=2A
10 to 30
IB
2.5
A
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=2A, IB=0.4A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
75typ
pF
ø3.3±0.2
a
b
3.3
3.0
V
1.75
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
125
2
10
–5
0.3
–1
1max
5max
1max
2
I B =100mA
1
0
1
0
2
3
2
V B E (sat)
1
–55˚C (Case Temp)
25˚C (Case Temp)
e Temp)
125˚C (Cas
V C E (sat)
0
0.03 0.05
4
C
125˚C (
0.1
0.5
Collector-Emitter Voltage V C E (V)
as
1
5
0
10
–55˚C
10
1
5
5
t s tg
VCC 250V
IC:IB1:–IB2
=2:0.3:1 Const.
1
tf
0.5
t on
0.2
0.1
0.5
20
10
10
10
P c – T a Derating
80
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100
500
Collector-Emitter Voltage V C E (V)
1000
60
40
nk
0.01
50
1000
si
1000
100
at
500
Collector-Emitter Voltage V C E (V)
98
1
he
100
0.1
ite
50
0.5
Time t(ms)
0.5
0.05
10
1
fin
0.05
0.01
5
1
0.1
1.2
In
Without Heatsink
Natural Cooling
1.0
ith
1
0.8
W
Collector Curr ent I C (A)
s
0.5
0.1
1
5
µs
Collector Curre nt I C ( A)
10
0µ
0.6
2
M aximum Power Dissipa ti on P C (W)
20
10
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
s
0.2
Collector Current I C (A)
Collector Current I C (A)
1m
Transient Thermal Resistance
t on• t s t g • t f (µ s)
25˚C
Swi tchi ng T im e
DC Cur rent Gain h F E
125˚C
5
0
Base-Emittor Voltage V B E (V)
10
0.5
2
1
t on •t stg • t f – I C Characteristics (Typical)
50
0.1
3
e
(V C E =4V)
0.05
4
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
(V CE =4V)
mp)
200mA
E
e Te
3
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
5
θ j- a ( ˚C/W)
Collector Current I C (A)
300mA
3.35
1.5
(Cas
400 mA
4.4
125˚C
500m A
0.65 +0.2
-0.1
5.45±0.1
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
60 0m A
4
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
700mA
5
1.5
Te
m p)
25˚
C
– 5 5 ˚C
I C – V CE Characteristics (Typical)
0.8
2.15
5.45±0.1
VCC
(V)
3.45 ±0.2
p)
Tstg
5.5±0.2
ase Tem
IC
15.6±0.2
–55˚C (C
VEBO
0.8±0.2
µA
23.0±0.3
100max
5.5
800
VCB=800V
1.6
VCEO
ICBO
)
V
Unit
Temp
900
2SC4300
(Case
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
25˚C
Unit
16.2
2SC4300
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Switching Regulator and General Purpose
20
3.5
0
Without Heatsink
0
50
100
Ambient Temperature Ta(˚C)
150