2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF Tstg 19.9±0.3 V IC VEBO 15.6±0.4 9.6 a 200 RL (Ω) VBB1 (V) 28.5 7 10 2 3 1.05 +0.2 -0.1 5.45±0.1 VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –5 0.7 –1.4 1.0max 3.0max 0.5max I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 4.8±0.2 b V ■Typical Switching Characteristics (Common Emitter) VCC (V) 1.8 VCB=500V V 5.0±0.2 ICBO 500 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol Ratings Unit 4.0max ■Electrical Characteristics Conditions Ratings Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 0 1 0 2 3 12 5˚ 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 5 DC Cur rent Gain h F E 125˚C Swi tchi ng T im e 25˚C –30˚C 10 1 5 10 12 1 0.5 tf t on 0.1 0.5 1 10 12 0µ 1 ) 10 e Te (Cas 100 1000 P c – T a Derating 100 Collector Curr ent I C (A) nk Collector-Emitter Voltage V C E (V) 500 si 100 50 at 50 he 10 ite 0.1 5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Dut y:less than 1% fin 500 0.5 In Without Heatsink Natural Cooling 1 ith 1 5 W 5 Collector-Emitter Voltage V C E (V) mp) ) mp 0.3 Time t(ms) 10 100 emp 0.5 s 10 50 se T 1 M aximum Power Dissipa ti on P C (W) 10 10 Te 3 30 30 Co lle ctor Cu rren t I C (A) 5 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 5 0.5 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg V C C 200V I C :I B1 :I B2 =10:1:–2 Transient Thermal Resistance t on• t s tg • t f (µ s) 40 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 2 C 5˚ –5 0.05 0.1 Collector-Emitter Voltage V C E (V) 8 0.02 4 C V C E (sat) 0 0.02 4 (C se 125˚C 6 –55˚C 2 ) emp ase T (Ca I B =100mA e Temp) 25˚C (Cas 8 (Ca 200mA 4 Temp) 25˚C 6 –55˚C (Case 5˚C 400m A 1 12 8 10 V B E (sat) θ j - a (˚ C/W) Collector Current I C (A) 60 0m A Collector Current I C (A) 80 0m A 10 (V CE =4V) 12 as e 25 Temp ) ˚C 1A (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 12 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 125