SANKEN 2SC5071_01

2SC5071
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
100max
µA
V
IEBO
VEB=10V
100max
µA
V
VCEO
400
10
V(BR)CEO
IC=25mA
400min
12(Pulse24)
A
hFE
VCE=4V, IC=7A
10 to 30
IB
4
A
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=7A, IB=1.4A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
105typ
pF
Tstg
19.9±0.3
V
IC
VEBO
15.6±0.4
9.6
a
200
RL
(Ω)
VBB1
(V)
28.5
7
10
2
3
1.05 +0.2
-0.1
5.45±0.1
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–5
0.7
–1.4
1.0max
3.0max
0.5max
I C – V CE Characteristics (Typical)
2.0±0.1
ø3.2±0.1
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
4.8±0.2
b
V
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
1.8
VCB=500V
V
5.0±0.2
ICBO
500
2.0
Unit
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0
Symbol
Ratings
Unit
4.0max
■Electrical Characteristics
Conditions
Ratings
Symbol
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
C
1.4
E
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
0
1
0
2
3
12
5˚
0.5
1
5
t on •t stg • t f – I C Characteristics (Typical)
5
DC Cur rent Gain h F E
125˚C
Swi tchi ng T im e
25˚C
–30˚C
10
1
5
10 12
1
0.5
tf
t on
0.1
0.5
1
10 12
0µ
1
)
10
e Te
(Cas
100
1000
P c – T a Derating
100
Collector Curr ent I C (A)
nk
Collector-Emitter Voltage V C E (V)
500
si
100
50
at
50
he
10
ite
0.1
5
Without Heatsink
Natural Cooling
L=3mH
I B2 =1.0A
Dut y:less than 1%
fin
500
0.5
In
Without Heatsink
Natural Cooling
1
ith
1
5
W
5
Collector-Emitter Voltage V C E (V)
mp)
)
mp
0.3
Time t(ms)
10
100
emp
0.5
s
10
50
se T
1
M aximum Power Dissipa ti on P C (W)
10
10
Te
3
30
30
Co lle ctor Cu rren t I C (A)
5
1.0
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.1
5
0.5
Collector Current I C (A)
Collector Current I C (A)
0.5
t s tg
V C C 200V
I C :I B1 :I B2 =10:1:–2
Transient Thermal Resistance
t on• t s tg • t f (µ s)
40
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
10
Collector Current I C (A)
h FE – I C Characteristics (Typical)
0.05
2
C
5˚
–5
0.05 0.1
Collector-Emitter Voltage V C E (V)
8
0.02
4
C
V C E (sat)
0
0.02
4
(C
se
125˚C
6
–55˚C
2
)
emp
ase T
(Ca
I B =100mA
e Temp)
25˚C (Cas
8
(Ca
200mA
4
Temp)
25˚C
6
–55˚C (Case
5˚C
400m A
1
12
8
10
V B E (sat)
θ j - a (˚ C/W)
Collector Current I C (A)
60 0m A
Collector Current I C (A)
80 0m A
10
(V CE =4V)
12
as
e
25 Temp
)
˚C
1A
(C
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
12
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
125