SANKEN 2SC4073

2SC4073
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
V
ICBO
VCEO
400
V
VEBO
10
V
5(Pulse10)
A
IC
Unit
VCB=500V
100max
µA
IEBO
VEB=10V
100max
µA
V(BR)CEO
IC=25mA
400min
V
hFE
VCE=4V, IC=2A
10 to 30
IB
2
A
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=2A, IB=0.4A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.3A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
10.1±0.2
ø3.3±0.2
a
b
3.9
V
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
100
2
10
–5
0.2
–0.4
1max
3max
0.5max
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
1
2
3
4
V C E (sat)
0
0.01
0.05 0.1
Collector-Emitter Voltage V C E (V)
0.5
1
–5
t on •t stg • t f – I C Characteristics (Typical)
5
50
t o n• t s tg • t f (µ s)
25˚C
–55˚C
Swi tchi ng T im e
10
0.5
1
5
1
0.5
t on
tf
0.1
0.1
0.5
5
1
10
1m
s
0.3
)
mp)
(Cas
e Te
p)
emp
–55˚C
10
100
1000
P c – T a Derating
30
si
nk
Collector Cur rent I C (A)
at
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than1%
he
0.1
ite
0.5
20
fin
1
0.05
10
Without Heatsink
2
50
se T
Tem
1
In
Without Heatsink
Natural Cooling
10
1.4
ith
C
0.1
5
1.2
Time t(ms)
5
s
0.5
0.01
2
1.0
10
0µ
D
1
m
0.8
W
10
s
0.6
0.5
Reverse Bias Safe Operating Area
20
Collector Curren t I C (A)
1
5
20
5
0.4
Collector Current I C (A)
Safe Operating Area (Single Pulse)
0.05
t s tg
V C C 200V
I C :I B1 :–I B 2 =10:1:2
Collector Current I C (A)
10
0.2
θ j-a – t Characteristics
Maximu m Power Di ssip ation P C (W)
DC Curr ent Gain h FE
125˚C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
se
0
5
(Ca
(Ca
C
5˚
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.01
˚C
1
C
25˚C
5˚
θ j- a ( ˚C/W)
0
12
2
Transient Thermal Resistance
0
–55˚C (Case Temp)
p)
25˚C (Case Tem
e Temp)
as
(C
5˚C
12
3
125
50mA
1
1
4
Collector Current I C (A)
100mA
2
V B E (sat)
)
200mA
emp
3
eT
300m A
2
˚C
IB
400 mA
as
Collector Current I C (A)
4
(V C E =4V)
5
25
=8
00
m
A
60 0m A
(C
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
5
2.4±0.2
2.2±0.2
VCC
(V)
I C – V CE Characteristics (Typical)
4.2±0.2
2.8 c0.5
4.0±0.2
500
2SC4073
0.8±0.2
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
±0.2
Symbol
Unit
8.4±0.2
■Electrical Characteristics
2SC4073
16.9±0.3
Symbol
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
100
Collector-Emitter Voltage V C E (V)
500
0.01
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
87