SANKEN 2SC3678

2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
µA
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
IC=10mA
800min
V
3(Pulse6)
A
hFE
VCE=4V, IC=1A
10 to 30
IB
1.5
A
VCE(sat)
IC=1A, IB=0.2A
0.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=1A, IB=0.2A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.3A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
5.45±0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
250
1
10
–5
0.15
–0.5
1max
5max
1max
0
0
1
2
3
4
–55
˚C
V C E (sat)
0
0.02
0.05
0.1
Collector-Emitter Voltage V C E (V)
1
0
3
t on •t stg • t f – I C Characteristics (Typical)
8
t on • t st g• t f ( µ s)
–55˚C
10
0.1
0.5
1
3
5
t s tg
V C C 250V
I C :I B1 :–I B2
=2:0.3:1Const.
1
tf
0.5
t on
0.2
0.1
0.5
10
3
0.5
0.3
5
10
P c – T a Derating
Maxim um Power Dissip ation P C (W)
500
Collector-Emitter Voltage V C E (V)
1000
Collecto r Curr ent I C (A)
nk
100
40
si
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
60
at
0.1
50
500 1000
he
Collector-Emitter Voltage V C E (V)
1000
100
ite
500
50
fin
100
1
80
1
0.5
p)
1
In
Without Heatsink
Natural Cooling
1.2
ith
0.5
1.0
Time t(ms)
s
1
0.8
W
Co lle ctor Cu rren t I C (A)
1
5
5
0.6
3
10
0µ
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
0.1
50
Transient Thermal Resistance
25˚C
Switching T im e
DC Curr ent Gain h F E
125˚C
0.05
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
50
ase Tem
5˚C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.01
1
(
12
0.5
mp)
Temp)
e Te
(Case
(Cas
125˚C
2
–55˚C (C
I B =50mA
e Temp)
25˚C (Cas
θ j - a (˚C /W)
1
p)
–55˚C (Case Tem
125˚C
100mA
V B E (sat)
1
Collector Current I C (A)
200 mA
2
(V CE =4V)
3
2 5 Cas
eT
˚C
e m p)
Collector Current I C (A)
300mA
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
3
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
400mA
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
500mA
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
V
VCC
(V)
2.0±0.1
mp)
Tstg
a
4.8±0.2
ase Te
IC
25˚C (C
VEBO
4.0max
800
20.0min
VCEO
15.6±0.4
9.6
1.8
100max
V
5.0±0.2
VCB=800V
900
2.0
ICBO
VCBO
4.0
Unit
Symbol
19.9±0.3
2SC3678
Unit
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
2SC3678
Symbol
Application : Switching Regulator and General Purpose
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
67