2SC5287

2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
100max
µA
VCEO
550
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
V
5(Pulse10)
A
hFE
IC
IC=10mA
550min
VCE=4V, IC=1.8A
10 to 25
IB
2.5
A
VCE(sat)
IC=1.8A, IB=0.36A
0.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=1.8A, IB=0.36A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.35A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
139
1.8
10
–5
0.27
–0.9
0.7max
4.0max
0.5max
1.4
E
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
400 mA
250 mA
3
150 mA
2
I B =50mA
1
3
4
1.0
V B E (sat)
0.5
0
0.03 0.05
0.1
0.5
25˚C
Switching T im e
–55˚C
10
1
5
10
tf
0.5
t on
0.1
0.2
0.5
50
10
5
0.5
0.3
1
10
µs
P c – T a Derating
fin
ite
he
40
at
si
nk
0.1
0.1
Without Heatsink
Natural Cooling
IB2=–1.0A
L=3mH
Duty:less than 1%
In
0.5
ith
1
60
W
Without Heatsink
Natural Cooling
20
0.05
0.05
100
Collector-Emitter Voltage V C E (V)
500
1000
80
5
0.5
100
Time t(ms)
10
s
1
134
1
1
Reverse Bias Safe Operating Area
Collecto r Cur rent I C (A)
0µ
1.0
3
Collector Current I C (A)
20
50
0.5
θ j-a – t Characteristics
20
10
0
Base-Emittor Voltage V B E (V)
1
Safe Operating Area (Single Pulse)
0.03
10
0
t s tg
V C C 250V
I C :I B1 :I B 2 =1:0.15:–0.5
Collector Current I C (A)
5
2
5 7
6
5
t on • t s t g • t f ( µ s)
125˚C
0.5
1
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
0.1
3
Collector Current I C (A)
h FE – I C Characteristics (Typical)
0.05
4
1
Collector-Emitter Voltage V C E (V)
5
4
0.02
5
V C E (sat)
θ j - a (˚ C/W)
2
6
Transient Thermal Resistance
1
I C /I B =5 Const.
Maxim um Power Dissi pation P C (W)
0
7
1.5
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
600mA
mA
4
Collector Current I C (A)
C
(V CE =4V)
0
70
D C Cur r ent Gai n h F E
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
5
Collecto r Cur rent I C (A)
2
3
5.45±0.1
RL
(Ω)
40
ø3.2±0.1
1.05 +0.2
-0.1
VCC
(V)
0
2.0±0.1
V
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
b
20.0min
VEBO
15.6±0.4
9.6
1.8
Unit
VCB=800V
Symbol
5.0±0.2
Ratings
ICBO
2.0
Conditions
V
4.0
Unit
900
19.9±0.3
Ratings
VCBO
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
0.03
50
Without Heatsink
100
500
Collector-Emitter Voltage V C E (V)
1000
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150