2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max 0 0 1 2 3 0.1 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 10 25˚C –55˚C 10 0.1 0.5 1 5 10 5 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 1 0µ 5 10 ) 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 10 50 100 Collector-Emitter Voltage V C E (V) 500 40 ) emp mp) se T (Cas –55˚C nk 1 60 si Collecto r Cur ren t I C (A) e Te Te P c – T a Derating at Collector-Emitter Voltage V C E (V) 500 1000 he 100 5 0.5 100 ite 50 10 fin 0.1 10 1 In Without Heatsink Natural Cooling 5 mp 0.3 ith 0.5 se 0.5 W 1 1.2 80 10 5 1.0 Time t(ms) s 10 0.8 1 Maxim um Power Dissi pation P C (W) 10 0.6 3 30 30 s 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 0.2 Collector Current I C (A) Collector Current I C (A) Collecto r Curr ent I C (A) Transient Thermal Resistance t o n• t s tg • t f (µ s) 125˚C Switching Ti me DC Cur rent Gain h FE 100 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 5 0.02 (Ca 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) (Ca V C E (sat) 0.05 Collector-Emitter Voltage V C E (V) 50 4 2 0 0.02 4 6 ˚C I B =100m A 2 V B E (sat) 25˚C 200m A 4 1 125 400mA 6 (V C E =4V) 8 Collector Current I C (A) 600 mA 1.4 E 10 θ j- a ( ˚C/W) Collector Current I C (A) 8 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1.4 1A 0.65 +0.2 -0.1 Weight : Approx 2.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) A 2 3 B RL (Ω) 1.2 2.0±0.1 ø3.2±0.1 5.45±0.1 VCC (V) 10 a 4.8±0.2 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 15.6±0.4 9.6 b IB Tstg 4.0 IC 19.9±0.3 VEBO Symbol 1.8 Ratings V 5.0±0.2 Conditions 500 2.0 Unit VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics Ratings 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 91