2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) IC 12 A hFE VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz 180typ pF –55 to +150 °C Tj Tstg 10.1±0.2 1.35±0.15 1.35±0.15 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ 4 10mA I B =5mA 0 0.8 1.6 2.4 3.2 4 4.8 0 0.002 6A 3A I C= 1 A 5.6 6 0.01 0.1 1 (V C E =1V) 1000 DC Cur rent Gain h FE Typ 100 50 1 500 25˚C –3 0˚C 100 50 20 0.02 10 12 0.1 Collector Current I C (A) f T – I E Characteristics (Typical) 1 10 12 5 1 0.5 0.3 1 10 0m s DC m s 20 ite he 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 nk Emitter Current I E (A) –10 –12 si 0.05 –5 at 150x150x2 10 100x100x2 50x50x2 0.1 –1 fin Without Heatsink Natural Cooling In 0.5 30 ith 1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W 10 10 5 s 10 10 20 P c – T a Derating Ma ximum Po we r Dissipa ti on P C ( W) 1m Typ 1000 40 30 30 100 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 1.0 1.1 0.5 Collector Current I C (A) Collecto r Curr ent I C (A) DC Cur rent Gain h FE 125˚C 500 –0.5 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 1000 Cut- off F requ ency f T (M H Z ) 0 3 Base-Emittor Voltage V B E (V) (V C E =1V) 0 –0.05 –0.1 p) 2 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 Tem 9A Collector-Emitter Voltage V C E (V) 20 0.02 4 12A θ j - a (˚C /W) 0 6 Transient Thermal Resistance 2 0.5 se 20mA 8 (Ca 6 10 1.0 ˚C 40mA (V CE =1V) 12 1.3 125 8 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V CE(s a t) (V ) A m 20 Collector Current I C (A) 60mA Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 10 2.4±0.2 2.2±0.2 RL (Ω) 100m A 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 VCC (V) 12 ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 e Te mp) (Case Temp ) V(BR)CEO µA –30˚C IEBO V Unit 100max 4.0±0.2 V 6 2SC4064 VCB=50V 0.8±0.2 50 VEBO Conditions ±0.2 VCEO Symbol (Cas ICBO 3.9 V 25˚C Unit 50 16.9±0.3 2SC4064 VCBO External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : DC Motor Driver and General Purpose 13.0min LOW VCE (sat) 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 85