SANKEN 2SD2557

Equivalent circuit
2SD2557
Silicon NPN Triple Diffused Planar Transistor
Unit
VCB=200V
100max
µA
VCEO
200
V
IEBO
VEB=6V
5max
mA
VEBO
6
V
V(BR)CEO
IC
5
A
hFE
IC=10mA
200min
VCE=5V, IC=1A
1500 to 6500
V
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
IB
2
A
VCE(sat)
IC=1A, IB=5mA
1.5max
V
PC
70(Tc=25°C)
W
fT
VCE=10V, IE=–0.5A
15typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
°C
Tstg
15.6±0.4
9.6
1.8
2SD2557
ICBO
5.0±0.2
Conditions
V
2.0
Unit
200
19.9±0.3
2SD2557
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0
■Electrical Characteristics
VCBO
Symbol
(3.2kΩ)(450Ω) E
2
4.0max
■Absolute maximum ratings (Ta=25°C)
B
Application : Series Regulator and General Purpose
20.0min
Darlington
C
3
1.05 +0.2
-0.1
5.45±0.1
0.65 +0.2
-0.1
5.45±0.1
B
C
1.4
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
mA
1
12
1
0
0
2
4
0
6
0
1
Collector-Emitter Voltage V C E (V)
2.5
θ j-a – t Characteristics
D C Cur r ent Gai n h F E
8000
5000
˚C
125
C
25˚
1000
500
–30
˚C
100
50
10
5
0.02
0.1
0.5
1
5
θ j- a ( ˚ C/W)
h FE – I C Temperature Characteristics (Typical)
(V C E =5V)
5.0
1.0
0.5
0.3
1
5
10
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
70
30
at
si
nk
Ma xim um Powe r Dissipat io n P C (W)
40
he
Collect or Cur ren t I C (A)
ite
0.1
fin
Without Heatsink
Natural Cooling
In
0.5
50
ith
1
60
W
5
10
m
50 s
m
s
0m
s
s
10
1m
10
0.05
5
500 1000 2000
50 100
Time t(ms)
Collector Current I C (A)
30
20
10
Without Heatsink
10
50
100
Collector-Emitter Voltage V C E (V)
156
2
Base-Emittor Voltage V B E (V)
Transient Thermal Resistance
h FE – I C Characteristics (Typical)
p)
2
(C
A
0 .3 m
ase Tem
A
–30˚C (C
0 .6 m
3
em
p)
mp)
A
eT
2
1 .2 m
e Te
3
4
mA
as
2.5
(Cas
10
25˚C
50
mA
5˚C
A
Collector Current I C (A)
A
I B = 1 .0
2
m
50
4
Collector Current I C (A)
(V C E =4V)
5
5
300
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150