2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 –0.3 to –1 –50 0.6 0.6 2N4339 –0.6 to –1.8 –50 0.8 1.5 2N4340 –1 to –3 –50 1.3 3.6 2N4341 –2 to –6 –50 2 9 FEATURES BENEFITS APPLICATIONS D D D D D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 3 D G and Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C For applications information see AN102 and AN106. Document Number: 70240 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-1 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4338 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 VGS(off) VDS = 15 V, ID = 0.1 mA 2N4339 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V VGS = –30 V, VDS = 0 V Gate Reverse Current Gate Operating Currentb –0.3 IGSS TA = 150_C 0.2 –50 –1 –0.6 0.6 0.5 –1.8 V 1.5 mA –2 –100 –100 pA –4 –100 –100 nA 50 50 IG VDG = 15 V, ID = 0.1 mA –2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance gfs 0.6 1.8 0.8 2.4 mS 5 15 mS 2500 1700 W 5 7 7 1.5 3 3 VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW pF nV⁄ √Hz 6 1 1 dB SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 VGS(off) VDS = 15 V, ID = 0.1 mA Max 2N4341 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V VGS = –30 V, VDS = 0 V Gate Reverse Current Gate Operating Currentb IGSS IG Drain Cutoff Current ID(off) Gate-Source Forward Voltage VGS(F) www.vishay.com 7-2 –1 TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V 1.2 –3 –2 3.6 3 V –6 9 mA –2 –100 –100 pA –4 –100 –100 nA –2 VGS = –5 V 2 VGS = –10 V 3 IG = 1 mA , VDS = 0 V –50 0.7 50 pA 70 V Document Number: 70240 S-04028—Rev. E, 04-Jun-01 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Typa Test Conditions 2N4341 Min Max Min Max Unit 1.3 3 2 4 mS 30 60 mS 1500 800 W 5 7 7 1.5 3 3 Dynamic Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V, f = 1 kHz Common-Source Output Conductance gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance VDS = 0 V, VGS = 0 V, f = 1 kHz Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW pF nV⁄ √Hz 6 1 1 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC. dB NPA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 5 8 4 6 3 gfs IDSS 4 2 2 1 0 0 0 –1 –2 –3 –4 VGS(off) – Gate-Source Cutoff Voltage (V) Document Number: 70240 S-04028—Rev. E, 04-Jun-01 –5 ID = 100 mA 500 mA TA = 125_C 1 nA IG – Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 10 IGSS @ 125_C 100 pA 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 6 12 18 24 30 VDG – Drain-Gate Voltage (V) www.vishay.com 7-3 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 2 10 gos 1200 8 6 900 rDS 600 4 300 2 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 gfs – Forward Transconductance (mS) VGS(off) = –1.5 V gos – Output Conductance (µS) rDS(on) – Drain-Source On-Resistance ( Ω ) 1500 0 0 –1 –2 –3 –4 1.6 TA = –55_C 1.2 25_C 0.8 125_C 0.4 0 0.01 –5 0.1 VGS(off) – Gate-Source Cutoff Voltage (V) 1 ID – Drain Current (mA) Output Characteristics Output Characteristics 400 2 VGS(off) = –0.7 V VGS(off) = –1.5 V VGS = 0 V 320 1.6 ID – Drain Current (mA) ID – Drain Current (µA) VDS = 10 V f = 1 kHz –0.1 V 240 –0.2 V 160 –0.3 V 80 VGS = 0 V 1.2 –0.3 V 0.8 –0.6 V 0.4 –0.5 V –0.4 V –0.9 V –1.2 V 0 0 0 4 8 12 16 20 0 VDS – Drain-Source Voltage (V) 4 8 12 16 VDS – Drain-Source Voltage (V) Output Characteristics Output Characteristics 300 1 VGS(off) = –0.7 V VGS(off) = –1.5 V 240 0.8 –0.3 V ID – Drain Current (mA) VGS = 0 V ID – Drain Current (µA) –0.1 V 180 –0.2 V 120 –0.3 V 60 VGS = 0 V 0.6 –0.6 V 0.4 0.2 –0.4 V –0.9 V –0.5 V –1.2 V 0 0 0 0.1 0.2 0.3 VDS – Drain-Source Voltage (V) www.vishay.com 7-4 20 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 VDS – Drain-Source Voltage (V) Document Number: 70240 S-04028—Rev. E, 04-Jun-01 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 2 500 VGS(off) = –0.7 V VDS = 10 V VGS(off) = –1.5 V VDS = 10 V 1.6 400 ID – Drain Current (mA) ID – Drain Current (µA) TA = –55_C TA = –55_C 300 25_C 200 125_C 100 0 1.2 25_C 0.8 0.4 125_C 0 0 –0.1 –0.2 –0.3 –0.4 0 –0.5 –0.4 VGS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage –1.6 –2 Transconductance vs. Gate-Source Voltage 1.2 VGS(off) = –1.5 V VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) VGS(off) = –0.7 V gfs – Forward Transconductance (mS) –1.2 4 1.5 TA = –55_C 25_C 0.9 0.6 125_C 0.3 0 VDS = 10 V f = 1 kHz 3.2 2.4 TA = –55_C 25_C 1.6 0.8 125_C 0 0 –0.1 –0.2 –0.3 –0.4 0 –0.5 VGS – Gate-Source Voltage (V) –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current 200 2000 g fs R L 160 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 120 10 V RL + ID 80 rDS(on) – Drain-Source On-Resistance ( Ω ) AV + AV – Voltage Gain –0.8 VGS – Gate-Source Voltage (V) VGS(off) = –0.7 V –1.5 V 40 0 TA = 25_C 1600 VGS(off) = –0.7 V 1200 800 –1.5 V 400 0 0.01 0.1 ID – Drain Current (mA) Document Number: 70240 S-04028—Rev. E, 04-Jun-01 1 0.01 0.1 1 ID – Drain Current (mA) www.vishay.com 7-5 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 Crss – Reverse Feedback Capacitance (pF) f = 1 MHz Ciss – Input Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 –4 –8 –12 –16 –20 0 VGS – Gate-Source Voltage (V) –12 –16 –20 Equivalent Input Noise Voltage vs. Frequency 20 VGS(off) = –1.5 V VDS = 10 V f = 1 kHz VDS = 10 V 2.4 Hz 16 en – Noise Voltage nV / gos – Output Conductance (µS) –8 VGS – Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 –4 1.8 TA = –55_C 0.8 25_C 0.4 ID = 100 mA 12 8 ID = IDSS 4 125_C 0 0 0.01 0.1 ID – Drain Current (mA) www.vishay.com 7-6 1 10 100 1k 10 k 100 k f – Frequency (Hz) Document Number: 70240 S-04028—Rev. E, 04-Jun-01