TI TPS3600D33

TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
features
typical applications
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Supply Current of 40 µA (Max)
Precision Supply Voltage Monitor
– 2.0 V, 2.5 V, 3.3 V, 5.0 V
– Other Versions on Request
Watchdog Timer With 800-ms Time-Out
Backup-Battery Voltage Can Exceed VDD
Power-On Reset Generator With Fixed
100-ms Reset Delay Time
Battery OK Output
Voltage Monitor for Power-Fail or
Low-Battery Monitoring
Manual Switchover to Battery-Backup
Mode
Chip-Enable Gating –3 ns (at VDD = 5 V)
Max. Propagation Delay
Manual Reset
Battery Freshness Seal
14-Pin TSSOP Package
Temperature Range . . . –40°C to 85°C
Fax Machines
Set-Top Boxes
Advanced Voice Mail Systems
Portable Battery Powered Equipment
Computer Equipment
Advanced Modems
Automotive Systems
Portable Long-Time Monitoring Equipment
Point of Sale Equipment
TSSOP (PW) Package
(TOP VIEW)
VOUT
VDD
GND
MSWITCH
CEIN
BATTON
PFI
1
2
3
4
5
6
7
VBAT
RESET
WDI
MR
CEOUT
BATTOK
PFO
14
13
12
11
10
9
8
ACTUAL SIZE
(5,10mm x 6,60mm)
typical operating circuit
Address
Decoder
Power
Supply
0.1 µF
External
Source
CEIN
Rx
VDD
VBAT
TPS3600
PFI
MR
uC
WDI
I/O
I/O
BATTOK
I/O
MSWITCH V
OUT
GND
8
RESET
PFO
BATTON
CE
CMOS
RAM
VCC
Address Bus
Backup
Battery
RESET
Ry
Manual
Reset
CEOUT
CE
CMOS
RAM
VCC
RealTime
Clock
VCC
8
Data Bus
16
I/O
Switchover
Capacitor
0.1 µF
VCC
GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
description
The TPS3600 family of supervisory circuits monitor and control processor activity. In case of power-fail or
brownout conditions, the backup-battery switchover function of TPS3600 allows to run a low-power processor
and its peripherals from the installed backup battery without asserting a reset beforehand.
During power on, RESET is asserted when the supply voltage (VDD or VBAT) becomes higher than Vres.
Thereafter, the supply voltage supervisor monitors VOUT and keeps RESET output active as long as VOUT
remains below the threshold voltage (VIT). An internal timer delays the return of the output to the inactive state
(high) to ensure proper system reset. This delay timer starts its time-out, after VOUT has risen above the
threshold voltage (VIT). In case of a brownout or power failure of both supply sources, a voltage drop below the
threshold voltage (VIT) get detected and the output becomes active (low) again.
The product spectrum is designed for supply voltages of 2 V, 2.5 V, 3.3 V, and 5 V. The circuits are available
in a 14-pin TSSOP package. They are characterized for operation over a temperature range of –40°C to 85°C.
PACKAGE INFORMATION
TA
DEVICE NAME
TPS3600D20
40°C to 85°C
–40°C
TPS3600D25
TPS3600D33
TPS3600D50
ordering information application specific versions (see Note)
TPS360
0
D
20
PW
R
Reel
Package
Nominal Supply Voltage
Nominal BATTOK Threshold Voltage
Functionality
Family
DEVICE NAME
NOMINAL VOLTAGE, VNOM
TPS3600x20 PW
2.0 V
TPS3600x25 PW
2.5 V
TPS3600x33 PW
3.3 V
TPS3600x50 PW
5.0 V
DEVICE NAME
THRESHOLD VOLTAGE, VBOK
TPS3600Dxx PW
VIT + 7%
VIT + 6%
NOMINAL BATTOK
TPS3600Fxx PW{
TPS3600Hxx PW{
VIT + 8%
VIT + 10%
† For the application specific versions, please contact the local TI sales
office for availability and lead time.
TPS3600Jxx PW{
2
POST OFFICE BOX 655303
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
FUNCTION TABLES
VDD > VSW
0
VOUT > VIT
0
VDD > VBAT
0
MSWITCH
MR
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
0
0
1
0
1
0
0
1
1
0
0
0
1
1
1
0
1
0
0
0
0
1
0
0
1
0
1
0
1
0
0
1
0
1
1
0
1
1
0
0
0
1
1
0
1
0
1
1
1
0
0
1
1
1
1
1
1
0
0
0
1
1
0
0
1
1
1
0
1
0
1
1
0
1
1
1
1
1
0
0
1
1
1
0
1
1
1
1
1
0
1
1
1
1
1
VBAT > VBOK
0
BATTOK
1
1
VOUT
VBAT
BATTON
RESET
CEOUT
1
0
DIS
VBAT
VBAT
1
0
DIS
1
0
DIS
VBAT
VDD
1
0
DIS
0
0
DIS
VDD
VBAT
0
0
DIS
1
0
DIS
VBAT
VBAT
1
0
DIS
1
0
DIS
VBAT
VBAT
1
1
EN
1
0
DIS
VBAT
VDD
1
1
EN
0
0
DIS
VDD
VBAT
0
1
EN
1
0
DIS
VBAT
VDD
1
1
EN
0
0
DIS
VDD
VBAT
VBAT
0
1
EN
1
0
DIS
1
1
EN
VDD
VDD
0
0
DIS
0
1
EN
VBAT
VBAT
1
0
DIS
1
1
EN
0
CONDITION: VOUT > VDD(min)
CEIN
CEOUT
0
0
1
1
CONDITION: Enabled
PFI > VPFI
PFO
0
0
1
1
CONDITION: VOUT > VDD(min)
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3
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
functional schematic
TPS3600
MR
MSWITCH
VBAT
+
_
Switch
Control
Internal
Supply
Voltage
VDD
VOUT
BATTON
+
_
Reference
Voltage
or 1.15 V
BATTOK
R1
GND
_
+
R2
RESET
Logic
and
Timer
RESET
_
PFO
+
PFI
Oscillator
WDI
Transition
Detector
Watchdog
Logic
and
Control
VOUT
40 kΩ
CEOUT
CEIN
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
timing diagram
VBAT
V(BOK)
V(SWP)
V(SWN)
V(IT)
VDD
t
VOUT
V(SWN)
t
RESET
t
BATTOK
1
0
t
BATTON
VBAT
VDD
VBAT
VDD
VBAT
t
NOTES: A. MSWITCH = 0, MR = 1
NOTES: B. Timing diagram shown under normal operation, not in freshness seal mode.
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5
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BATTOK
9
O
Battery status output
BATTON
6
O
Logic output/external bypass switch driver output
CEIN
5
I
Chip-enable input
CEOUT
10
O
Chip-enable output
GND
3
I
Ground
MR
11
I
Manual reset input
MSWITCH
4
I
Manual switch to force device into battery-backup mode (connect to GND if not used)
PFI
7
I
Power-fail comparator input (connect to GND if not used)
PFO
8
O
Power-fail comparator output
RESET
13
O
Active-low reset output
VBAT
VDD
14
I
Backup-battery input
2
I
Input supply voltage
1
O
Supply output
12
I
Watchdog timer input
VOUT
WDI
detailed description
battery freshness seal
The battery freshness seal of the TPS3600 family disconnects the backup battery from the internal circuitry until
it is needed. This ensures that the backup battery connected to VBAT should be fresh when the final product is
put to use. The following steps explain how to enable the freshness seal mode:
1. Connect VBAT (VBAT > VBAT(min))
2. Ground PFO
3. Connect PFI to VDD or PFI > V(PFI)
4. Connect VDD to power supply (VDD > VIT)
5. Ground MR
6. Power down VDD
7. The freshness seal mode is entered and pins PFO and MR can be disconnected.
The battery freshness seal mode is disabled by the positive-going edge of RESET when VDD is applied.
BATTOK output
This is a logic feedback of the device to indicate the status of the backup battery. The supervisor checks the
battery voltage every 200 ms with a voltage divider load of approximately 100 KΩ and a measure cycle on-time
of 25 µs. This measurement cycle starts after the reset is released. If the battery voltage VBAT is below the
negative-going threshold voltage V(BOK), the indicator BATTOK does a high-to-low transition. Otherwise, its
status remains to the VOUT level.
Table 1. Typical Values for BATTOK Indication
SUPERVISOR TYPE
6
TPS3600D20
VIT TYP
1.78 V
VBOK MIN
1.84 V
VBOK TYP
1.91 V
VBOK MAX
1.97 V
TPS3600D25
2.22 V
2.3 V
2.38 V
2.46 V
TPS3600D33
2.93 V
3.04 V
3.14 V
3.24 V
TPS3600D50
4.40 V
4.56 V
4.71 V
4.86 V
POST OFFICE BOX 655303
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
detailed description (continued)
IBAT
25 µs
200 ms
100 µA
t
Figure 1. BATTOK Timing
chip-enable signal gating
The internal gating of chip-enable signals (CE) prevents erroneous data from corrupting CMOS RAM during
an under-voltage condition. The TPS3600 use a series transmission gate from CEIN to CEOUT. During normal
operation (reset not asserted), the CE transmission gate is enabled and passes all CE transitions. When reset
is asserted, this path becomes disabled, preventing erroneous data from corrupting the CMOS RAM. The short
CE propagation delay from CEIN to CEOUT enables the TPS3600 devices to be used with most processors.
The CE transmission gate is disabled and CEIN is high impedance (disable mode) while reset is asserted.
During a power-down sequence when VDD crosses the reset threshold, the CE transmission gate will be
disabled and CEIN immediately becomes high impedance if the voltage at CEIN is high. If CEIN is low during
reset is asserted, the CE transmission gate will be disabled same time when CEIN goes high, or 15 µs after reset
asserts, whichever occurs first. This will allow the current write cycle to complete during power down. When the
CE transmission gate is enabled, the impedance of CEIN appears as a resistor in series with the load at CEOUT.
The overall device propagation delay through the CE transmission gate depends on VOUT, the source
impedance of the device connected to CEIN and the load at CEOUT. To achieve minimum propagation delay,
the capacitive load at CEOUT should be minimized, and a low-output-impedance driver be used.
During disable mode, the transmission gate is off and an active pullup connects CEOUT to VOUT. This pullup
turns off when the transmission gate is enabled.
CEIN
t
CEOUT
15 µs
t
RESET
t
Figure 2. Chip-Enable Timing
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7
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
detailed description (continued)
power-fail comparator (PFI and PFO)
An additional comparator is provided to monitor voltages other than the nominal supply voltage. The power-fail
input (PFI) will be compared with an internal voltage reference of 1.15 V. If the input voltage falls below the
power-fail threshold, V(PFI), of 1.15 V typical, the power-fail output (PFO) goes low. If it goes above V(PFI) plus
about 12-mV hysteresis, the output returns to high. By connecting two external resistors, it is possible to
supervise any voltages above V(PFI). The sum of both resistors should be about 1 MΩ, to minimize power
consumption and also to ensure that the current in the PFI pin can be neglected compared with the current
through the resistor network. The tolerance of the external resistors should be not more than 1% to ensure
minimal variation of sensed voltage.
If the power-fail comparator is unused, connect PFI to ground and leave PFO unconnected.
BATTON
Most often BATTON is used as a gate drive for an external pass transistor for high-current applications. In
addition it can be also used as a logic output to indicate the battery switchover status. BATTON is high when
VOUT is connected to VBAT.
BATTON can be directly connected to the gate of a PMOS transistor (see Figure 3). No current-limiting resistor
is required. When using a PMOS transistor, it must be connected backwards from the traditional method (see
Figure 3). This method orients the body diode from VDD to VOUT and prevents the backup battery from
discharging through the FET when its gate is high.
PMOS FET
Body Diode
D
S
G
VDD BATTON VOUT
TPS3600
GND
Figure 3. Driving an External MOSFET Transistor With BATTON
backup-battery switchover
In the event of a brownout or power failure, it may be necessary to keep a processor running. If a backup battery
is installed at VBAT, the devices automatically connect the processor to backup power when VDD fails. In order
to allow the backup battery (e.g., a 3.6-V lithium cell) to have a higher voltage than VDD, this family of supervisors
will not connect VBAT to VOUT when VBAT is greater than VDD. VBAT only connects to VOUT (through a 2-Ω switch)
when VOUT falls below V(SWN) and VBAT is greater than VDD. When VDD recovers, switchover is deferred either
until VDD crosses VBAT, or when VDD rises above the threshold V(SWP). (See the timing diagram)
8
VDD > VBAT
1
VDD > V(SW)
1
VOUT
VDD
1
0
0
1
VDD
VDD
0
0
VBAT
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
detailed description (continued)
manual switchover (MSWITCH)
While operating in the normal mode from VDD, the device can be manually forced to operate in the
battery-backup mode by connecting MSWITCH to VDD. The table below shows the different switchover modes.
MSWITCH
GND
VDD mode
Battery back p mode
Battery-backup
VDD
GND
VDD
STATUS
VDD mode
Switch to battery-backup mode
Battery-backup mode
Battery-backup mode
If the manual switchover feature is not used, MSWITCH must be connected to ground.
watchdog
In a microprocessor- or DSP-based system, it is not only important to supervise the supply voltage, it is also
important to ensure the correct program execution. The task of a watchdog is to ensure that the program is not
stalled in an indefinite loop. The microprocessor, microcontroller, or the DSP have to toggle the watchdog input
within typically 0.8 s to avoid a time-out from occurring. Either a low-to-high or a high-to-low transition resets
the internal watchdog timer. If the input is unconnected the watchdog is disabled and will be retriggered
internally.
saving current while using the watchdog
The watchdog input is internally driven low during the first 7/8 of the watchdog time-out period, then momentarily
pulses high, resetting the watchdog counter. For minimum watchdog input current (minimum overall power
consumption), leave WDI low for the majority of the watchdog time-out period, pulsing it low-high-low once
within 7/8 of the watchdog time-out period to reset the watchdog timer. If instead, WDI is externally driven high
for the majority of the time-out period, a current of e.g. 5 V/40 kΩ ≈ 125 µA can flow into WDI.
VOUT
VIT
WDI
t(tout)
RESET
td
td
td
Undefined
Figure 4. Watchdog Timing
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9
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage: VDD (see Note1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
All other pins (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
Continuous output current at VOUT: IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
All other pins, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND. For reliable operation the device must not be operated at 7 V for more than t = 1000h
continuously.
DISSIPATION RATING TABLE
PACKAGE
TA < 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
PW
700 mW
5.6 mW/°C
448 mW
364 mW
recommended operating conditions at specified temperature range
MIN
Supply voltage, VDD
MAX
1.65
Battery supply voltage, VBAT
Input voltage, VI
High-level input voltage, VIH
UNIT
5.5
V
1.5
5.5
V
0
VOUT + 0.3
V
0.7 x VOUT
Low-level input voltage, all other pins, VIL
V
0.3 x VOUT
V
Continuous output current at VOUT, IO
200
Input transition rise and fall rate at WDI, MSWITCH, ∆t/∆V
100
ns/V
34
mV/µs
85
°C
Slew rate at VDD or VBAT
Operating free-air temperature range, TA
10
–40
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mA
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
electrical characteristics over recommended operating conditions (unless otherwise noted)
PARAMETER
VOH
VOL
Vres
High-level
High
level output
voltage
Low-level
Low
level output
voltage
TEST CONDITIONS
VOUT – 0.3 V
PFO
CEOUT
Enable mode
CEIN = VOUT
VOUT = 2.0 V, IOH = –1 mA
VOUT = 3.3 V, IOH = –2 mA
VOUT = 5.0 V, IOH = –5 mA
VOUT – 0.2 V
CEOUT
Disable mode
VOUT = 3.3 V, IOH = –0.5 mA
VOUT – 0.4 V
RESET,
PFO,
BATTOK
VOUT = 2.0 V, IOL = 400 µA
VOUT = 3.3 V, IOL = 2 mA
VOUT = 5.0 V, IOL = 3 mA
0.2
VOUT = 1.8 V, IOL = 500 µA
VOUT = 3.3 V, IOL = 3 mA
VOUT = 5.0 V, IOL = 5 mA
0.2
BATTON
CEOUT
Enable mode
CEIN = 0 V
VOUT = 2.0 V, IOL = 1 mA
VOUT = 3.3 V, IOL = 2 mA
VOUT = 5.0 V, IOL = 5 mA
0.2
V(SWN)
VBAT > 1.1 V OR
VDD > 1.4 V, IOL = 20 µA
IO = 5 mA,
VDD = 1.8 V
IO = 75 mA, VDD = 3.3 V
IO = 150 mA, VDD = 5 V
IO = 4 mA,
VBAT = 1.5 V
Battery backup mode
Battery-backup
V(PFI)
V(BOK)
UNIT
VOUT = 1.8 V, IOH = –20 µA
VOUT = 3.3 V, IOH = –80 µA
VOUT = 5.0 V, IOH = –120 µA
Power-up reset voltage (see Note 2)
VDD to VOUT on-resistance
VBAT to VOUT on-resistance
Negative-going
input
Negative
going in
ut
threshold voltage
(see Notes 3 and 4)
MAX
RESET,
BATTOK,
BATTON
VOUT
VIT
TYP
VOUT – 0.2 V
Normal mode
rds(on)
d ( )
MIN
VOUT = 2.0 V, IOH = –400 µA
VOUT = 3.3 V, IOH = –2 mA
VOUT = 5.0 V, IOH = –3 mA
IO = 75 mA,
VDD = 3.3 V
VBAT = 3.3 V
VOUT – 0
0.4
4V
VOUT – 0
0.4
4V
V
VOUT – 0
0.3
3V
04
0.4
04
0.4
03
0.3
0.4
VDD – 50 mV
VDD – 150 mV
VDD – 250 mV
VBAT = 3.3 V
V
1
2
1
2
1.74
1.78
1.82
TPS3600x25
2.17
2.22
2.27
TPS3600x30
2.57
2.63
2.69
2.87
2.93
2.99
TPS3600x50
4.31
4.40
4.49
PFI
1.13
1.15
1.17
TA = –40°C to 85°C
TPS3600Dxx
V
VBAT – 50 mV
VBAT – 150 mV
TPS3600x20
TPS3600x33
V
VIT + 5.8%
VIT + 7.1%
VIT + 8.3%
VIT + 1%
VIT + 2%
VIT + 3.2%
Battery switch threshold voltage
negative-going VOUT
Ω
V
V
NOTES: 2. The lowest supply voltage at which RESET becomes active. tr(VDD) ≥ 15 µs/V.
3. To ensure best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1 µF) should be placed near the supply terminal.
4. Voltage is sensed at VOUT
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
electrical characteristics over recommended operating conditions (unless otherwise noted)
(continued)
PARAMETER
TEST CONDITIONS
VIT
BATTOK
Vhys
y
Hysteresis
MIN
TYP
1.65 V < VIT < 2.5 V
20
2.5 V < VIT < 3.5 V
40
3.5 V < VIT < 5.5 V
50
1.65 V < V(BOK) < 2.5 V
30
2.5 V < V(BOK) < 3.5 V
60
3.5 V < V(BOK) < 5.5 V
100
PFI
IIH
High level input current
High-level
IIL
Low level input current
Low-level
II
Input current
IOS
Short-circuit current
UNIT
mV
12
V(BSW)
VDD = 1.8 V
1.65 V < V(SWN) < 2.5 V
66
V((SWN))
2.5 V < V(SWN) < 3.5 V
100
3.5 V < V(SWN) < 5.5 V
110
85
WDI (see Note 5)
WDI = VDD = 5 V
MR
MR = 0.7 × VDD, VDD = 5 V
WDI (see Note 5)
WDI = 0 V,
VDD = 5 V
MR
MR = 0 V,
VDD = 5 V
PFI, MSWITCH
VI < VDD
PFO = 0 V,
VDD = 1.8 V
–0.3
PFO = 0 V,
VDD = 3.3 V
–1.1
PFO = 0 V,
VDD = 5 V
–2.4
PFO
150
–33
VDD supply current
VOUT = VDD
VOUT = VBAT
I(BAT)
VBAT supply current
VOUT = VDD
VOUT = VBAT
Ilkg
CEIN leakage current
Disable mode, VI < VDD
–110
• DALLAS, TEXAS 75265
µA
–255
25
40
8
–0.1
Ci
Input capacitance
VI = 0 V to 5.0 V
NOTE 5: For details on how to optimize current consumption when using WDI, see the detailed description section.
POST OFFICE BOX 655303
–76
–150
–25
IDD
12
MAX
0.1
40
±1
5
nA
mA
µA
µA
µA
pF
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
timing requirements at RL = 1 MΩ, CL = 50 pF, TA = –40°C to 85°C
PARAMETER
Pulse width
tw
TEST CONDITIONS
VDD
MR
WDI
VIH = VIT + 0.2 V, VIL = VIT – 0.2 V
MIN
TYP
5
VDD > VIT + 0.2
02V
V, VIL = 0.3
0 3 x VDD, VIH = 0.7
0 7 x VDD
MAX
UNIT
µs
1
100
ns
switching characteristics at RL= 1 MΩ, CL = 50 pF, TA = –40°C to 85°C
PARAMETER
TEST CONDITIONS
td
Delay time
VDD ≥ VIT + 0.2 V,
MR ≥ 0.7 x VDD,
See timing diagram
t(tout)
Watchdog time-out
VDD > VIT + 0.2 V,
See timing diagram
tPLH
Propagation (delay) time,
low-to-high-level output
tPHL
Propagation (delay) time,
high-to-low-level output
TYP
MAX
UNIT
60
100
140
ms
0.48
0.8
1.12
s
µs
50% RESET to 50% CEOUT
VOUT = VIT
VDD to RESET
VIL = VIT – 0.2 V,
VIH = VIT + 0.2 V
2
5
µs
PFI to PFO
VIL = V(PFI) – 0.2 V,
VIH = V(PFI) + 0.2 V
3
5
µs
0.1
1
µs
5
15
ns
1.6
5
ns
1
3
ns
3
µs
MR to RESET
50% C
CEIN to 50% C
CEOUT
O
CL = 50 pF
F only (see Note 6)
Transition time
MIN
VDD ≥ VIT + 0.2 V,
VIL = 0.3 x VDD,
VIH = 0.7 x VDD
VDD = 1.8 V
VDD = 3.3 V
VDD = 5 V
VIL = VBAT – 0.2 V,
VIH = VBAT + 0.2 V,
V(BAT) < VIT
VDD to BATTON
15
NOTE 6: Ensured by design.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Static Drain-source on-state resistance VDD to VOUT
rDS(on)
( )
IDD
VIT
Static Drain-source on-state resistance VBAT to VOUT
vs Output current
vs Chip enable input voltage
Supply current
vs Supply voltage
8, 9
Normalized threshold voltage
vs Free-air temperature
10
High-level output voltage at PFO
19, 20
vs Low-level output current
Low-level output voltage at BATTON
tp(min)
13, 14
15, 16, 17, 18
Low-level output voltage at RESET
Low-level output voltage at CEOUT
7
11, 12
vs High-level output current
High-level output voltage at CEOUT
VOL
6
Static Drain-source on-state resistance
High-level output voltage at RESET
VOH
5
21, 22
23, 24
Minimum Pulse Duration at VDD
vs Threshold voltage overdrive at VDD
25
Minimum Pulse Duration at PFI
vs Threshold voltage overdrive at PFI
26
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BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
STATIC DRAIN SOURCE ON-STATE RESISTANCE
(VBAT TO VOUT)
vs
OUTPUT CURRENT
rDS(on) – Static Drain Source On-State Resistance
(V BAT to VOUT) – Ω
rDS(on) – Static Drain Source On-State Resistance
(V DD to VOUT) – Ω
STATIC DRAIN SOURCE ON-STATE RESISTANCE
(VDD TO VOUT)
vs
OUTPUT CURRENT
1.5
TA = 85°C
1.4
1.3
TA = 25°C
1.2
TA = 0°C
1.1
1
TA = –40°C
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
0.9
0.8
50
76
100
125
150
IO – Output Current – mA
175
1.6
VBAT = 3.3 V
MSWITCH = VDD
1.5
TA = 85°C
1.4
1.3
TA = 25°C
1.2
TA = 0°C
1.1
TA = –40°C
1
0.9
50
200
75
Figure 5
200
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
40
7
VBAT Mode
VBAT = 5 V
MSWITCH = GND
35
6
TA = 25°C
30
I DD – Supply Current – µ A
rDS(on) – Static Drain Source On-State Resistance
(CEIN to CEOUT) – Ω
175
Figure 6
STATIC DRAIN SOURCE ON-STATE RESISTANCE
(CEIN to CEOUT)
vs
CHIP-ENABLE INPUT VOLTAGE
TA = 85°C
25
20
TA = 0°C
15
TA = –40°C
10
TA = –40°C
TA = 0°C
4
TA = 25°C
3
2
TA = 85°C
ICEOUT = 5 mA
VDD = 5 V
MSWITCH = GND
5
5
1
0
0
0
1
2
3
4
VCEIN – Chip-Enable Input Voltage – V
5
0
0.5
Figure 7
14
100
125
150
IO – Output Current – mA
1
1.5 2 2.5 3 3.5 4
VDD – Supply Voltage – V
Figure 8
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4.5
5
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
NORMALIZED THRESHOLD VOLTAGE
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
1.001
VBAT Mode
VDD = GND
or
MSWITCH = GND
25
20
VDD Mode
VBAT = GND
MSWITCH = GND
TA = 25°C
VIT – Normalized Threshold Voltage – V
I DD(BAT)– Supply Current – µ A
30
TA = 0°C
TA = 85°C
15
TA = –40°C
10
5
1
2
3
4
VDD – Supply Voltage – V
5
0.999
0.998
0.997
0.996
0.995
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80
TA – Free-Air Temperature – °C
0
0
1
6
Figure 9
Figure 10
HIGH-LEVEL OUTPUT VOLTAGE AT RESET
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE AT RESET
vs
HIGH-LEVEL OUTPUT CURRENT
5.1
VDD = 5 V
VBAT = GND
MSWITCH = GND
5
VOH – High-Level Output Voltage at RESET – V
VOH– High-Level Output Voltage at RESET – V
6
TA = –40°C
TA = 25°C
4
TA = 0°C
3
2
TA = 85°C
1
Expanded View
5
TA = –40°C
4.9
TA = 25°C
TA = 0°C
4.8
4.7
TA = 85°C
VDD = 5 V
VBAT = GND
MSWITCH = GND
4.6
4.5
0
0
–5
–10
–15
–20
–25
–30
IOH – High-Level Output Current – mA
–35
0
–0.5 –1 –1.5
–2 –2.5 –3 –3.5 –4 –4.5 –5
IOH – High-Level Output Current – mA
Figure 11
Figure 12
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15
TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
5.55
5
VOH – High-Level Output Voltage at PFO – V
VOH – High-Level Output Voltage at PFO – V
6
TA = –40°C
TA = 25°C
4
TA = 0°C
3
TA = 85°C
2
VDD = 5.5 V
PFI = 1.4 V
VBAT = GND
MSWITCH = GND
1
0
0
Expanded View
5.50
TA = –40°C
5.45
TA = 0°C
5.40
5.35
5.30
TA = 85°C
5.25
5.20
5.15
5.10
–0.5
–1
–1.5
–2
IOH – High-Level Output Current – mA
TA = 25°C
–2.5
VDD = 5.5 V
PFI = 1.4 V
VBAT = GND
MSWITCH = GND
0 –20 –40 –60 –80 –100 –120 –140 –160 –180 –200
IOH – High-Level Output Current – µA
Figure 13
Figure 14
HIGH-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
HIGH-LEVEL OUTPUT CURRENT
3.35
V(CEIN)= 3.3 V
VDD = 5 V
MSWITCH = GND
Enable Mode
3
TA = –40°C
2.5
TA = 25°C
2
TA = 0°C
1.5
1
TA = 85°C
0.5
0
VOH – High-Level Output Voltage at CEOUT – V
VOH – High-Level Output Voltage at CEOUT – V
3.5
3.30
TA = –40°C
TA = 25°C
TA = 0°C
3.25
TA = 85°C
3.20
3.15
3.10
–10
–30
–50 –70 –90 –110 –130 –150
IOH – High-Level Output Current – mA
0 –0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4 –4.5 –5
IOH – High-Level Output Current – mA
Figure 15
16
V(CEIN) = 3.3 V
VDD = 5 V
MSWITCH = GND
Expanded View
Enable Mode
Figure 16
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
HIGH-LEVEL OUTPUT CURRENT
3.5
3.5
3
VOH – High-Level Output Voltage at CEOUT – V
VOH – High-Level Output Voltage at CEOUT – V
HIGH-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
HIGH-LEVEL OUTPUT CURRENT
TA = –40°C
2.5
TA = 25°C
TA = 0°C
2
1.5
TA = 85°C
1
Disable Mode
V(CEIN) = open
VDD = 1.65 V
MSWITCH = GND
0.5
0
0
–0.5 –1
–1.5
–2
–2.5
–3
–3.5
3.4
3.3
TA = –40°C
3.2
TA = 25°C
TA = 0°C
3.1
TA = 85°C
3
2.9
2.8
2.7
0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1
–4 –4.5
IOH – High-Level Output Current – mA
IOH – High-Level Output Current – mA
Figure 17
Figure 18
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
500
3.5
VOL – Low-Level Output Voltage at RESET – mV
VOL – Low-Level Output Voltage at RESET – V
V(CEIN) = open
VDD = 1.65 V
MSWITCH = GND
Expanded View
Disable Mode
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
3
2.5
TA = 0°C
2
TA = 25°C
1.5
TA = 85°C
1
TA = –40°C
0.5
0
0
5
10
15
20
IOL – Low-Level Output Current – mA
25
Expanded View
TA = 85°C
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
400
TA = 25°C
300
TA = 0°C
200
TA = –40°C
100
0
0
1
2
3
4
IOL – Low-Level Output Current – mA
Figure 19
5
Figure 20
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE AT CEOUT
vs
LOW-LEVEL OUTPUT CURRENT
VOL– Low-Level Output Voltage at CEOUT – mV
VOL– Low-Level Output Voltage at CEOUT – V
3.5
Enable Mode
V(CEIN) = GND
VDD = 5 V
MSWITCH = GND
3
2.5
TA = 85°C
2
TA = 25°C
TA = 0°C
1.5
TA = –40°C
1
0.5
140
V(CEIN) = GND
VDD = 5 V
MSWITCH = GND
120
TA = 85°C
100
TA = 25°C
80
TA = 0°C
60
TA = –40°C
40
20
0
0
0
10 20 30 40 50 60 70 80 90
IOL – Low-Level Output Current – mA
0
100
1
VOL – Low-Level Output Voltage at BATTON – mV
VOL – Low-Level Output Voltage at BATTON – V
Enable Mode
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
TA = 85°C
TA = 0°C
TA = 25°C
1.5
1
TA = –40°C
0.5
0
0
5
5
10
15
20
25
IOL – Low-Level Output Current – mA
30
400
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
350
Enable Mode
Expanded View
TA = 85°C
300
TA = 25°C
250
TA = 0°C
200
150
TA = –40°C
100
50
0
0
1
2
Figure 24
POST OFFICE BOX 655303
3
4
IOL – Low-Level Output Current – mA
Figure 23
18
4
LOW-LEVEL OUTPUT VOLTAGE AT BATTON
vs
LOW-LEVEL OUTPUT CURRENT
3.5
2
3
Figure 22
LOW-LEVEL OUTPUT VOLTAGE AT BATTON
vs
LOW-LEVEL OUTPUT CURRENT
2.5
2
IOL – Low-Level Output Current – mA
Figure 21
3
Enable Mode
Expanded View
• DALLAS, TEXAS 75265
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TPS3600D20, TPS3600D25, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
TYPICAL CHARACTERISTICS
TPS3600D50
MINIMUM PULSE DURATION AT VDD
vs
THRESHOLD OVERDRIVE AT VDD
Minimum Pulse Duration at VCC– µ s
10
9
8
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4 0.5
0.6 0.7 0.8 0.9
1
VT(0) – Threshold Overdrive at VDD – V
Figure 25
TPS3600D50
MINIMUM PULSE DURATION AT PFI
vs
THRESHOLD OVERDRIVE AT PFI
Minimum Pulse Duration at PFI – µ s
5
4.6
VDD = 1.65 V
4.2
3.8
3.4
3
2.6
2.2
1.8
1.4
1
0.6
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Threshold Overdrive at PFI – V
1
Figure 26
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BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336A – DECEMBER 2000 – REVISED APRIL 2001
MECHANICAL DATA
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
20
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
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