1 TC4403 1.5A HIGH-SPEED, FLOATING LOAD DRIVER ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current ......................... 300µA Max Capacitive Inputs With 300mV Hysteresis Both Inputs Must Be Driven to Drive Load Low Output Leakage High Peak Current Capability Fast Output Rise Time Outputs Individually Testable APPLICATIONS ■ ■ ■ 2 GENERAL DESCRIPTION FEATURES Isolated Load Drivers Pulsers Safety Interlocks ORDERING INFORMATION Temperature Range Part No. Package TC4403CPA TC4403EPA TC4403MJA 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP 0°C to 70°C – 40°C to +85°C – 55°C to +125°C PIN CONFIGURATION NC 1 8 NC IN (VDD) 2 7 OUT (VDD) GND 3 6 VDD IN (GND) 4 5 OUT (GND) TC4403 The TC4403 is a modified version of the TC4425 driver, intended to drive floating or isolated loads requiring highcurrent pulses. The load is intended to be connected between the outputs without other reference to supply or ground. Then, only when both logic inputs and the VDD input are energized, is power supplied to the load. This construction allows the implementation of a wide variety of redundant input controllers. The low OFF-state output leakage and independence of the two half-circuits permit a wide variety of testing schemes to be utilized to assure functionality. The high peak current capability, short internal delays, and fast output rise and fall times ensure that sufficient power will be available to the load when it is needed. The TTL and CMOS compatible inputs allow operation from a wide variety of input devices. The ability to swing the inputs negative without affecting device performance allows negative biases to be placed on the inputs for greater safety. In addition, the capacitive nature of the inputs allows the use of series resistors on the inputs for extra noise suppression. The TC4403 is built for outstanding ruggedness and reliability in harsh applications. Input voltage excursions above the supply voltage or below ground are clamped internally without damaging the device. The output stages are power MOSFETs with high-speed body diodes to prevent damage to the driver from inductive kickbacks. FUNCTIONAL BLOCK DIAGRAM 6 7 300mV INPUT HYSTERESIS 5 IN (VDD) 4 5 6 (TOP VIEW) IN (GND) 3 VDD 7 OUT (VDD) OUT (GND) 4 2 TC4403 GND 3 8 EFFECTIVE INPUT C = 20pF (EACH INPUT) TC4403-6 10/11/96 TELCOM SEMICONDUCTOR, INC. 4-213 1.5A HIGH-SPEED, FLOATING LOAD DRIVER TC4403 ABSOLUTE MAXIMUM RATINGS* Thermal Derating Curves 1600 1400 MAX. POWER (mW) Supply Voltage ......................................................... +22V Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP, RθJ-A ............................................... 150°C/W CerDIP, RθJ-C ................................................. 50°C/W PDIP, RθJ-A .................................................. 125°C/W PDIP, RθJ-C .................................................... 42°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C 8 Pin DIP 1200 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 2.4 — –1000 — — ±10 — 0.8 +1000 V V nA VDD – 0.025 — — — — — — 2.8 3.5 1.5 — 0.025 5 5 — V V Ω Ω A Figure 1, CL = 1800pF Figure 1, CL = 1800pF Figure 1, CL = 1800pF Figure 1, CL = 1800pF — — — — 23 25 33 38 35 35 75 75 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — 1.5 0.15 2.5 0.25 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current – 5V ≤ VIN ≤ VDD Output VOH VOL ROS ROG IPK High Output Voltage Low Output Voltage Sourcing Output Resistance Grounding Output Resistance Peak Output Current IOUT = 10mA, VDD = 18V IOUT = –10mA, VDD = 18V Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time nsec nsec nsec nsec Power Supply IS Power Supply Current mA NOTE: 1. Switching times guaranteed by design. 4-214 TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED, FLOATING LOAD DRIVER 1 TC4403 ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V unless otherwise specified. Symbol Test Conditions Parameter Min Typ Max Unit 2.4 — –10,000 — — ±10 — 0.8 +10,000 V V nA VDD – 0.025 — — — — 3.7 — 0.025 8 V V Ω — 4.3 8 Ω Figure 1, CL = 1800pF Figure 1, CL = 1800pF Figure 1, CL = 1800pF Figure 1, CL = 1800pF — — — — 28 32 32 38 60 60 100 100 nsec nsec nsec nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — 2 0.2 3.5 0.3 mA 2 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current – 5V≤ VIN ≤ VDD Output VOH VOL ROS High Output Voltage Low Output Voltage Sourcing Output Resistance Grounding Output Resistance ROG VIN = 2.4V IOUT = 10mA, VDD = 18V VIN = 2.4V IOUT = –10mA, VDD = 18V 3 Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time 4 Power Supply IS Power Supply Current NOTE: 1. Switching times guaranteed by design. 1µF WIMA MKS-2 5 VDD = 16V VDD = 16V 0.1µF MLC INPUT 1µF WIMA MKS-2 10kΩ 0.1µF MLC OUTPUT 6 C L = 1800pF TC4403 TC4403 C L = 1800pF INPUT OUTPUT 10K Ω +5V +5V INPUT INPUT 0V 16V 10% t D1 0V tF 10% 90% 16V 90% t D1 OUTPUT 0V 7 OUTPUT 10% 0V tR 8 10% Figure 1. Switching Time Test Circuits TELCOM SEMICONDUCTOR, INC. 4-215 1.5A HIGH-SPEED, FLOATING LOAD DRIVER TC4403 TYPICAL CHARACTERISTICS Fall Time vs. Supply Voltage Rise Time vs. Supply Voltage 100 100 4700pF TA = +25°C tFALL (nsec) tRISE (nsec) 80 3300pF 60 2200pF 40 1500pF 1000pF 20 470pF 3300pF 60 2200pF 40 1500pF 1000pF 20 470pF 0 0 4 6 8 10 12 VDD 14 16 4 18 6 8 14 10 12 VDD 16 18 Fall Time vs. Capacitive Load Rise Time vs. Capacitive Load 100 100 TA = +25°C TA = +25°C 5V 60 5V 80 10V 15V 40 t FALL (nsec) 80 tRISE (nsec) TA = +25°C 4700pF 80 60 10V 15V 40 20 20 0 100 0 100 10,000 1000 1000 C LOAD (pF) 10,000 C LOAD (pF) Rise and Fall Times vs. Temperature Propagation Delay vs. Input Amplitude 32 CLOAD = 2200pF VDD = 18V t FALL TIME (nsec) 28 t RISE 26 24 t RISE 22 20 t D1 VDD = 10V 80 60 40 t D2 t FALL 18 –55 –35 –15 5 25 45 65 85 105 125 TEMPERATURE (°C) 4-216 CLOAD = 2200pF 100 DELAY TIME (nsec) 30 20 0 1 2 3 4 5 6 7 INPUT (V) 8 9 10 11 12 TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED, FLOATING LOAD DRIVER 1 TC4403 TYPICAL CHARACTERISTICS (Cont.) Delay Time vs. Supply Voltage 45 DELAY TIME (ns) DELAY TIME (nsec) CLOAD = 2200pF C LOAD = 2200pF TA = +25°C 45 40 35 tD2 30 t D1 tD2 40 35 tD1 3 30 25 25 20 –55 –35 –15 20 4 6 8 10 12 14 16 18 5 25 45 65 85 105 125 VDD TEMPERATURE (°C) Quiescent Current vs. Voltage Quiescent Current vs. Temperature BOTH INPUTS = 1 1.2 I QUIESCENT (mA) 1 BOTH INPUTS = 0 0.1 1.0 INPUTS = 1 0.8 5 0.6 0.4 0.2 0.01 4 6 4 1.4 TA = +25°C I QUIESCENT (mA) 2 Delay Time vs. Temperature 50 50 8 10 12 14 16 INPUTS = 0 0.0 –55 –35 –15 18 VDD 5 25 45 65 85 105 125 TEMPERATURE (°C) Typical Discharge Characteristics 6 TYPICAL APPLICATION 5.7 +15V CLOSED CIRCUIT VOLTAGE 5.1 TC4422 POWER 4.5 3.9 2.727V + 3.3 2.7 6 RT 2.768V 2 FIRE + RLOAD TC4403 RT 4 ARM 2.1 7 7 5 3 1 MΩ 1 MΩ 1.5 0 75 150 225 300 525 75 HOURS 8 –15V HOURS OF SERVICE TELCOM SEMICONDUCTOR, INC. 4-217