CHA4042 23–34GHz High Power Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA4042 is a three-stage pHEMT HPA MMIC designed for point-to-point and multi-point radio, and other Ka-band applications. The CHA4042 provides 25dBm nominal output power at 1dB gain compression over the 23-34GHz frequency range, and 20dB small signal gain. This product will be available in chip form. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Frequency Range: 23-34GHz Gain: 20dB Output Power (P-1dB): 25dBm Output TOI: 33dBm Input Return Loss: 18dB Output Return Loss: 11dB Bias: 6V, 300mA Dimensions: 1.93 x 1.09 x 0.07mm Predicted Gain& Return & Return Predicted Gain Loss 25 0 ← Gain -5 15 Output Rloss → 10 -10 -15 Input Rloss → 5 -20 0 -25 Return Loss (dB) S.S. Gain (dB) 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) Ref. : DSCHA40422218 -06-Aug.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 23-34GHz High Power Amplifier CHA4042 Predicted Output Power at 1-dB Gain Compression OUTPUT POWER (P-1dB) (dBm) 28 27 26 25 24 23 22 21 20 19 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) Absolute Maximum Ratings Tamb = 25 °C (1) Symbol • • Values Unit Vds Drain bias voltage_small signal 6.25 V Ids Drain bias current_small signal 450 mA Vgs Gate bias voltage -2 to +0.4 V Vdg Maximum Drain Gate voltage (Vd-Vg) +8 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating Temperature Range (3) -45 to +80 C Storage Temperature Range -55 to +125 C Tstg • Parameter Operation of this device above any one of these parameters may cause permanent damage. Duration < 1 s AuSn solder mount to CuW or CuMo carrier assumed Ref. : DSCHA40422218 -06-Aug.-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 23-34GHz High Power Amplifier CHA4042 Schematic Vd1 Vd2 Vd3 RF Out RF Vg2 Vg1 Vg3 Typical Bias Conditions Tamb. = 25 °C Symbol Parameter Values Unit Vd 1, 2, 3 Drain bias voltage 6.0 V Vg 1, 2, 3 Gate bias voltage -0.5 V Idd Total drain current 300 mA Ref. : DSCHA40422218 -06-Aug.-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 23-34GHz High Power Amplifier CHA4042 1.341 .970 .821 MMIC Outline & Bond Pads Not to scale, dimensions are in millimeters 1.090 14 13 12 11 10 9 .467 8 .240 15 .338 1 2 3 4 5 6 7 Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad #1, 7, 9: GND #4, 5, 11: GND #14: GND #2: VG1 #3: VG2 #6: VG3 #8: RF OUT #10: VD3 #12: VD2 #13: VD1 #15: RF IN (0.080 x 0.080) (0.080 x 0.090) (0.122 x 0.080) (0.100 x 0.150) (0.100 x 0.150) (0.100 x 0.100) (0.100 x 0.260) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.200) 1.930 1.819 1.341 .389 .000 .245 .000 Units: millimeters Thickness: 0.070 Chip size : 1930µm +/-35µm x 1090µm +/- 35µm Ref. : DSCHA40422218 -06-Aug.-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 23-34GHz High Power Amplifier CHA4042 MMIC Assembly and Bonding Diagram ( not to scale ) VD 0.01µ 100p 100p VD1 VD2 VD3 50 Ohm line RFin 50 Ohm line R F IN VG VG VG 100p Vg Ref. : DSCHA40422218 -06-Aug.-02 R F O U RFout 100p 0.01µ 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 23-34GHz High Power Amplifier CHA4042 Ordering Information Chip form : CHA4042-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA40422218 -06-Aug.-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice