TI TRF8010PWP

TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
D
D
D
D
D
D
D
D
D
Operates from 3.6-V and 4.8-V Power
Supplies for AMPS/NADC and GSM
Applications Respectively
Unconditionally Stable
Wide UHF Frequency Range
800 MHz to 1000 MHz
21 dBm and 23 dBm Typical Output Power
in AMPS/NADC and GSM Applications
Respectively
Linear Ramp Control
Transmit Enable/Disable Control
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
Minimum of External Components
Required for Operation
Surface-Mount Thermally Enhanced
Package for Extremely Small Circuit
Footprint
PWP PACKAGE
(TOP VIEW)
GND
GND
RFIN
GND
NC
VPC
GND
NC
VBB
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFOUT
GND
GND
TXEN
GND
VCC
VCC
GND
NC – No internal connection
description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication
applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time
division multiple access) applications. Very few external components are required for operation.
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section
of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of
RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal
external matching is required.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate
for the application:
D
D
21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular)
operation
23 dBm typical for GSM (Global System for Mobile Communications) operation
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically
greater than 50 dB.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
description (continued)
The TRF8010 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerPAD)
package and is characterized for operation from – 40°C to 85°C. The PWP package has a solderable pad that
can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also
acts as a low-inductance electrical path to ground and, for the TRF8010, must be electrically connected to the
PCB ground plane as a continuation of the regular package terminals that are designated GND.
functional block diagram
3
18
RFIN
RFOUT
15
Bias/Band Gap
Reference
TXEN
6
Linear Ramp
Control
VPC
12, 13
VCC
9
VBB
Terminal Functions
TERMINAL
NAME
GND
NC
NO.
I/O
1, 2, 4, 7, 10, 11,
14, 16, 17, 19, 20
DESCRIPTION
Analog ground for all internal analog circuits. All signals are referenced to the ground terminals.
5, 8
No connection. It is recommended that all NC terminals be connected to ground.
RFIN
3
I
RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT
18
O
RF output. RFOUT is an open-collector output and requires a decoupled connection to VCC
for operation.
TXEN
15
I
Transmit enable input (digital). When TXEN is high, the output device is enabled.
VBB
VCC
9
12, 13
VPC
6
Control section supply voltage.
First stage bias.
I
Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from
a typical value of –54 dBm to the maximum output power appropriate for the application.
PowerPAD is a trademark of Texas Instruments Incorporated.
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 5.6 V
Input voltage range at TXEN, VPC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 5.6 V
Input power at RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Thermal resistance, junction to case, RθJC (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal resistance, junction to ambient, RθJA (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32°C/W
Continuous total power dissipation at TA = 25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
Operating junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C
Junction temperature, TJ max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 100°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane on an FR4 board with no air flow
recommended operating conditions
MIN
Supply voltage, VCC (see Note 1)
NOM
3
High-level input voltage at TXEN, VIH
MAX
5
VCC – 0.8
V
V
Low-level input voltage at TXEN, VIL
Operating free-air temperature, TA
UNIT
– 40
0.8
V
85
°C
NOTE 1: Voltage values are with respect to GND.
electrical characteristics over full range of operating conditions
supply current, VCC = 3.6 V
PARAMETER
ICC
Supply current from VCC
TEST CONDITIONS
MIN
TYP‡
MAX
UNIT
Operating at maximum power out
TXEN high, VPC = 3 V
163
mA
Operating at minimum power out
TXEN high, VPC = 0 V
7
mA
‡ Typical values are at TA = 25_C.
supply current, VCC = 4.8 V
PARAMETER
ICC
Supply current from VCC
TEST CONDITIONS
MIN
TYP‡
MAX
UNIT
210
mA
Operating at maximum power out
TXEN high, VPC = 3 V
155
Operating at minimum power out
TXEN high, VPC = 0 V
7
Power down
TXEN low, VPC = 0 V
mA
0.05
mA
‡ Typical values are at TA = 25_C.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
AMPS/NADC operation, VCC = 3.6 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Operating frequency range
PO
TYP
824
PI = 0 dBm
PI = 0 dBm
Output power
Gain (small signal)
Input return loss (internally matched)
VPC = 0 V
Output return loss (externally matched, small signal)
PI = – 20 dBm
PI = – 20 dBm
Noise power in 30 kHz bandwidth
45 MHz offset at PI = 0 dBm
2f0
3f0
MAX
UNIT
849
MHz
21
dBm
–58
PI = – 20 dBm
PI = 0 dBm
Power added efficiency (PAE)
Harmonics
MIN
27
dB
28%
11
dB
11
dB
– 97
dBm
– 20
PI = 0 dBm
dBc
– 50
G S M o p e r a t i o nCC
, V= 4.8 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Extended GSM operating frequency range
PO
PI = 0 dBm
PI = 0 dBm VPC = 0 V
PI = – 20 dBm
Gain (small signal)
Power added efficiency (PAE)
21.5
Output return loss (externally matched, small signal)
23
10 MHz above f0
MHz
24.5
dBm
dB
29%
11
dB
11
PI = 0 dBm
20 MHz above f0
UNIT
925
28
PI = –20 dBm
2f0
3f0
MAX
– 54
PI = 0 dBm
PI = – 20 dBm
Input return loss (internally matched)
Noise power in 30 kHz bandwidth
TYP
870
Output power
Harmonics
MIN
dB
– 28
– 22
– 40
– 35
– 95
PI = 0 dBm
dBc
dBm
– 96
s t a b i l i t y, A M P S / N A D C a n d G S M o p e r a t i o n
PA R A M E T E R
TEST CONDITIONS
MIN
O u t p u t V S W†R< 6 : 1 a l l p h a s e s ,
VCC < 5.6 V,
PI = 0 dBm,
PO ≤ 22 dBm,
Output frequency band: 200 MHz – 1200 MHz
Stability
TYP
MAX
UNIT
MAX
UNIT
‡
† VSWR = voltage standing wave ratio
‡ No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
AMPS/NADC and GSM operation, VCC = 3.6 V or 4.8 V, TA = 25°C
PARAMETER
ton
toff
4
TEST CONDITIONS
MIN
TYP
Switching time, RF output OFF to ON
TXEN = high, VPC stepped from 0 V to 3 V
1
µs
Switching time, RF output ON to OFF
TXEN = high, VPC stepped from 3 V to 0 V
1
µs
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
TYPICAL CHARACTERISTICS
POWER ADDED EFFICIENCY
vs
INPUT POWER
OUTPUT POWER
vs
INPUT POWER
35
25
PAE – Power Added Efficiency – %
20
VCC = 4.8 V
VPC = 3 V
Freq = 900 MHz
25°C
–40°C/25°C
85°C
15
10
30
85°C
25
25°C
–40°C
20
15
10
5
0
5
–15
–10
–5
0
–20
5
–15
–10
–5
0
5
PI – Input Power – dBm
PI – Input Power – dBm
Figure 1
Figure 2
OUTPUT POWER AND POWER
ADDED EFFICIENCY
vs
FREQUENCY
34
23
25°C
85°C
32
22.5
–40°C
22
30
–40°C
21.5
25°C
21
20.5
20
860
85°C
VCC = 4.8 V
VPC = 3 V
PI = 0 dBm
870
880
28
26
24
PAE – Power Added Efficiency – %
–20
PO – Output Power – dBm
PO – Output power – dBm
VCC = 4.8 V
VPC = 3 V
Freq = 900 MHz
PO
PAE
890
900
910
920
930
22
940
f – Frequency – MHz
Figure 3
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
VPC GAIN CONTROL RANGE
OUTPUT POWER
vs
SUPPLY VOLTAGE
30
23
PI = 0 dBm
VCC = 4.8 V
Freq = 900 MHz
20
22
PO – Output Power – dBm
10
PO – Output Power – dBm
3.6 V
AMPS/NADC
Application Circuit
VPC = 3 V
Freq = 836 MHz
R1 = 0 Ω
0
85°C
25°C
–10
–20
–40°C
–30
–40
21
4.8 V
GSM Application
Circuit
VPC = 3 V
Freq = 900 MHz
R1 = 180 Ω
20
19
–50
–60
0
0.5
1
1.5
2
2.5
18
3
3
3.5
VPC – Power Control Input – V
4
Figure 4
Figure 5
INPUT RETURN LOSS
vs
FREQUENCY
9
VCC = 4.8 V
VPC = 3 V
PI = –20 dBm
Input Return Loss – dB
9.5
85°C
10
25°C
10.5
–40°C
11
11.5
12
860
870
880
890
900
910
920
f – Frequency – MHz
Figure 6
6
4.5
VCC – Supply Voltage – V
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
930
940
5
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
APPLICATION INFORMATION
A typical application example for AMPS/NADC cellular telephone systems is shown in Figure 7.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 1.
1
50 Ω line,
RF INPUT w = 20 mils
2
3
Board Material:
Type FR4, εr = 4.3, h = 12 mils
20
GND
GND
GND
GND
19
50 Ω line,
w = 20 mils
RFIN
RFOUT
L1
4
RF OUTPUT
C2
18
17
GND
GND
NC
GND
5
C1
L2
50 Ω line,
w = 20 mils
16
TRF8010
6
7
8
9
15
VPC
TXEN
GND
GND
NC
VCC
VBB
VCC
GND
GND
14
10
13
l = 220 mils,
w = 20 mils
C3
12
11
C4
VCC
Figure 7. Typical AMPS/NADC Cellular Telephone Application
Table 1. External Component Selection (AMPS/NADC)
COMPONENT
DESIGNATION
TYPICAL VALUE
(AMPS/NADC)
FUNCTION
C1
3.3 pF
Output impedance matching capacitor
C2
100 pF
DC-blocking capacitor for RF output
C3
100 pF
Matching capacitor
C4
1000 pF
Power supply decoupling capacitor
L1
5.7 nH
Output impedance matching inductor
L2
100 nH
DC bias/RF choke
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
APPLICATION INFORMATION
A typical application example for GSM cellular telephone systems is shown in Figure 8.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 2.
1
50 Ω line,
RF INPUT w = 20 mils
2
3
Board Material:
Type FR4, εr = 4.3, h = 12 mils
20
GND
GND
GND
GND
19
50 Ω line,
w = 20 mils
RFIN
RFOUT
L1
4
17
GND
GND
NC
GND
5
C1
L2
16
TRF8010
6
7
8
9
R1
15
VPC
TXEN
GND
GND
NC
VCC
VBB
VCC
GND
GND
14
10
13
l = 220 mils,
w = 20 mils
C3
12
11
C4
VCC
Figure 8. Typical GSM Cellular Telephone Application
Table 2. External Component Selection (GSM)
COMPONENT
DESIGNATION
8
RF OUTPUT
C2
18
TYPICAL VALUE
(GSM)
FUNCTION
C1
3.3 pF
Output impedance matching capacitor
C2
100 pF
DC-blocking capacitor for RF output
C3
100 pF
Matching capacitor
C4
1000 pF
Power supply decoupling capacitor
L1
6.8 nH
Output impedance matching inductor
L2
100 nH
DC bias/RF choke
R1
180 Ω
Bias supply resistor
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
50 Ω line,
w = 20 mils
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,19
0,65
20
0,10 M
Thermal Pad (3,18
(see Note C)
11
2,41 NOM)
0,15 NOM
6,60
6,20
4,50
4,30
Gage Plane
0,25
1
10
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
0,10
PINS **
14
16
20
24
28
A MAX
5,10
5,10
6,60
7,90
9,80
A MIN
4,90
4,90
6,40
7,70
9,60
DIM
4073225/E 03/97
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad
is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20.
PowerPAD is a trademark of Texas Instruments Incorporated.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
9
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright  1996, Texas Instruments Incorporated