TI TRF8011PWP

TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
D
D
D
D
D
D
D
D
D
Operates from 4.8–V Power Supply for
900–MHz Applications
Unconditionally Stable
Wide UHF Frequency Range: 800 MHz to
1000 MHz
24.5 dBm Typical Output Power
Linear Ramp Control
Transmit Enable/Disable Control
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
Minimum of External Components
Required for Operation
Thermally Enhanced Surface-Mount
Package for Extremely Small Circuit
Footprint
PWP PACKAGE
(TOP VIEW)
GND
GND
RFIN
GND
NC
VPC
GND
NC
VBB
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFOUT
GND
GND
TXEN
GND
VCC
VCC
GND
NC – No internal connection
description
The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It
consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple
access) applications. Very few external components are required for operation. The input is dc-blocked and
requires no external matching. The output requires external matching suitable for the application frequency.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –50 dBm to 24.5 dBm at 900 MHz. Forward isolation with
the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
The TRF8011 is available in a thermally enhanced, surface-mount, 20-pin PowerPADTM (PWP) thin-shrink small
outline package (TSSOP) and is characterized for operation from –40°C to 85°C. The PWP package has a
solderable pad that can improve the package thermal performance by bonding the pad to an external thermal
plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to
the PCB ground plane as a continuation of the regular package terminals that are designated GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
Copyright  1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
functional block diagram
RFIN
3
18
15
Bias/Band Gap
Reference
TXEN
6
VPC
RFOUT
9
Linear Ramp
Control
12, 13
VBB VCC
Terminal Functions
TERMINAL
NAME
GND
NO.
I/O
1,2,4,7,10,11,14,
16,17,19,20
NC
DESCRIPTION
Analog ground for all internal circuits. All signals are referenced to the ground terminals.
5, 8
No connection. It is recommended that all NC terminals be connected to ground.
RFIN
3
I
RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT
18
O
RF output. RFOUT is an open-collector output and requires a decoupled connection to VCC for
operation.
TXEN
15
I
Transmit enable input (digital). When TXEN is high, the output device is enabled.
VBB
VCC
12, 13
VPC
6
9
Control section supply voltage
First stage bias
I
Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical
value of –50 dBm to 25.5 dBm.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 V to 5.6 V
Input voltage range at TXEN, VPC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 V to 5.6 V
Input power at RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Thermal resistance, junction to case, RθJC (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5oC/W
Thermal resistance, junction to ambient, RθJA (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32oC/W
Continuous total power dissipation at TA = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
Operating junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110oC
Junction temperature TJ max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 oC to 85 oC
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 oC to 150 oC
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane of an FR4 board with no air flow
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
recommended operating conditions
MIN
Supply voltage: VCC (see Note 1)
NOM
3
High-level input voltage at TXEN, VIH
MAX
5
VCC – 0.8
V
V
Low-level input voltage at TXEN, VIL
Operating free-air temperature, TA
NOTE: 1. Voltage values are with respect to GND.
UNIT
–40
0.8
V
85
°C
electrical characteristics over full range of operating conditions
PARAMETER
ICC Supply current from VCC
TEST CONDITIONS
Operating at maximum power out
TXEN high,
VPC = 3 V
Operating at minimum power out
TXEN high,
VPC = 0 V
Power down
TXEN low,
VPC = 0 V
MIN
TYP†
MAX
UNIT
190
200
210
mA
10
mA
0.05
mA
TYP
MAX
UNIT
925
MHz
24.5
25.5
dBm
† Typical values are at TA = 25°C
VCC = 4.8 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
PI = 5 dBm
PI = 5 dBm, VPC = 0 V
23.5
Operating frequency range
870
Output power
Gain (small signal)
PI = –20 dBm
PI = 5 dBm
Power added efficiency (PAE)
Input return loss (internally matched)
PI = –20 dBm
PI = 5 dBm
Noise power in 30 kHz bandwidth
dBm
29
dB
31
%
12
dB
–20
dBc
–35
dBc
10 MHz above f0
PI = 5 dBm
PI = 5 dBm
–92
dBm
20 MHz above f0
PI = 5 dBm
–93
dBm
2f0
3f0
Harmonics
–50
stability
PARAMETER
Stability
TEST CONDITIONS
‡
Output VSWR < 6:1 all phases,
MIN
TYP
MAX
UNIT
§
VCC < 5.6 V, PI = 5 dBm, Output power 25 dBm,
Output frequency band : 200 MHz – 1200 MHz
‡ VSWR = voltage standing wave ratio
§ No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
VCC = 4.8 V, TA = 25°C
PARAMETER
ton
toff
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Switching time, RF output OFF to ON
TXEN = high, VPC stepped from 0 V to 3 V
1
µs
Switching time, RF output ON to OFF
TXEN = high, VPC stepped from 3 V to 0 V
2
µs
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
APPLICATION INFORMATION
A typical application example for GSM cellular telephone systems is shown in Figure 1.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 1.
1
2
3
RF INPUT
50 Ω
Line
GND
GND
GND
GND
RFIN
RFOUT
Board Material
Type FR4, er = 4.3, h = 12 mils
20
19
18
50 Ω
Line
L1
C2
RF OUTPUT
C1
4
5
6
7
8
GND
GND
NC
GND
VPC
TXEN
GND
GND
NC
VCC
17
L2
50 Ω
Line
16
15
14
13
50 Ω
Line
L = 200 Mils
9
10
R1
VBB
VCC
GND
GND
12
C3
11
VCC
C4
Figure 1. Typical GSM Cellular Telephone Application
Table 1. External Component Selection
4
COMPONENT DESIGNATION
TYPICAL VALUE
FUNCTION
C1
4 pF
Output impedance matching capacitor
C2
100 pF
DC-blocking capacitor for RF output
C3
1000 pF
Matching capacitor
C4
1 µF
Power supply decoupling capacitor
L1
3.3 nH
Output impedance matching inductor
L2
100 nH
DC bias/RF choke
R1
80 Ω
Bias supply resistor
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
TYPICAL CHARACTERISTICS
POWER ADDED EFFICIENCY
vs
INPUT POWER
OUTPUT POWER
vs
INPUT POWER
35
VCC = 4.8 V
VPC = 3 V
f = 900 MHz
25
PAE – Power Added Efficiency – %
PO – Output Power – dBm
–40°C
25°C
20
85°C
15
10
VCC = 4.8 V
VPC = 3 V
f = 900 MHz
5
0
–20
–15
–10
–5
0
PI – Input Power – dBm
5
30
25
–40°C
85°C
15
10
5
0
–20
10
–15
–10
–5
0
PI – Input Power – dBm
OUTPUT POWER AND POWER
ADDED EFFICIENCY
vs
FREQUENCY
PO – Output Power – dBm
85°C
25
–40°C
20
25.5
25°C
15
25
23.5
860
10
85°C
24.5
VCC = 4.8 V
VPC = 3 V
PI = 5 dBm
870
PO
PI = 5 dBm
VCC = 4.8 V
f = 900 MHz
20
PO – Output Power – dBm
30
PAE – Power Added Efficiency – %
–40°C
25°C
24
30
35
26
10
OUTPUT POWER
vs
VPC GAIN CONTROL RANGE
27.5
26.5
5
Figure 3
Figure 2
27
25°C
20
10
0
85°C
–10
25°C
–40°C
–20
–30
5
–40
0
–50
PAE
880
890
900
910
920
930
0
0.5
1
1.5
2
2.5
3
VPC – Power Control Input – V
f – Frequency – MHz
Figure 4
Figure 5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
TYPICAL CHARACTERISTICS
INPUT RETURN LOSS
vs
FREQUENCY
–11
Input Return Loss – dB
VCC = 4.8 V
VPC = 3 V
PI = –20 dBm
–11.5
85°C
–12
25°C
–12.5
–40°C
–13
860
870
880
890
900
910
920
930
f – Frequency – MHz
Figure 6
6
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
940
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,19
0,65
20
0,10 M
Thermal Pad (3,18
(see Note C)
11
2,41 NOM)
0,15 NOM
6,60
6,20
4,50
4,30
Gage Plane
0,25
1
10
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
0,10
PINS **
14
16
20
24
28
A MAX
5,10
5,10
6,60
7,90
9,80
A MIN
4,90
4,90
6,40
7,70
9,60
DIM
4073225/E 03/97
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad
is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20.
PowerPAD is a trademark of Texas Instruments Incorporated.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright  1998, Texas Instruments Incorporated