2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 ID 1. Emitter 2. Collector 3. Base 2 3 32 kΩ (Typ) 0.4 kΩ (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7 V Collector current IC 2 A Collector peak current I C(peak) 4 A C to E diode forward current ID 2 A 10 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CEO 24 — 32 V I C = 1 mA, IE = 0 Collector to emitter sustain voltage VCEO(sus) 25 — 33 V I C = 1 A, L = 20 mH, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 5 mA, IC = 0 Collector cutoff current I CBO — — 1 µA VCB = 20 V, IE = 0 I CEO — — 5 µA VCE = 20 V, RBE = ∞ hFE 7000 — 30000 hFE 2000 — — — VCE = 2 V, IC = 2 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 2 A, IB = 2 mA*1 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 2 A, IB = 2 mA*1 C to E diode forward voltage VD — — 2.0 V I D = 2 A*1 DC current transfer ratio Note: 2 1. Pulse test. VCE = 2 V, IC = 0.5 A*1 2SD1970 Maximum Collector Dissipation Curve Area of Safe Operation 10 Collector current IC (A) iC (peak) 8 4 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (°C) Typical Transfer Characteristics 70 60 50 1.2 40 0.8 30 µA Ta = 25°C Pulse 0.4 0.3 1.0 3 10 30 100 Collector to emitter voltage VCE (V) 2.0 Collector current IC (A) Collector current IC (A) 1.6 90 80 Ta = 25°C 1 shot pulse 0.01 0.1 150 Typical Output Characteristics 2.0 IC (max) ms =1 PW s n 10 m tio ra ) pe °C O 25 C D C= (T Collector power dissipation Pc (W) 12 1.6 VCE = 2 V Pulse Ta = 25°C 1.2 0.8 0.4 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 3 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100,000 30,000 10,000 –25 Ta = 75°C 25 Pulse 3,000 1,000 VCE = 2 V 300 100 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 Collector to emitter saturation voltage\ VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD1970 Saturation Voltage vs. Collector Current 10 3 VBE (sat) 1.0 VCE (sat) 0.3 0.1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) Typical Characteristics of Emitter to Collector Diode 2.0 Diode current ID (A) Ta = 25°C Pulse 1.6 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0 Emitter to collector diode forward voltage VECF (V) 4 lC = 100 lB Ta = 25°C Pulse 10 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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