HITACHI HTT1213E

HTT1213E
Silicon NPN Epitaxial Twin Transistor
ADE-208-1449(Z)
Preliminary
Rev. 0
Aug. 2001
Features
• Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1:
Equivalent
Buffer Transistor
Q2:
Equivalent
OSC Transistor
2SC5700
2SC5700
Outline
EMFPAK-6
Internal Connection
6
5
B1 6
4
2
B2 4
Q2
Q1
1
3
C1 1
1. Collector Q1
2. Emitter Q1
3. Collector Q2
Note: Marking is “E”.
E2 5
E1 2
C2 3
4. Base Q2
5. Emitter Q2
6. Base Q1
HTT1213E
Absolute Maximum Ratings
(Ta = 25 °C)
Ratings
Item
Symbol
Q1 and Q2
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
4
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
Total 200*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on PCB. (FR–4(13 x 13 x 0.635 mm))
Electrical Characteristics (Q1 and Q2)
(Ta = 25 °C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown V(BR)CBO
voltage
15


V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO


0.1
mA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO


1
mA
VCE = 4 V, RBE = infinite
Emitter cutoff current
IEBO


0.2
mA
VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
100
130
170

VCE = 1 V, IC = 5 mA

0.30
0.45
pF
VCB = 1 V, f = 1 MHz
Emitter ground
10
12

GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
13
16

dB

1.0
2.0
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Reverse transfer capacitance Cre
Gain bandwidth product
fT
Forward transfer coefficient
|S21|
Noise figure
NF
Rev.0, Aug. 2001, page 2 of 4
2
HTT1213E
Package Dimensions
+ 0.1
6 – 0.15 – 0.05
0.8 ± 0.1
1.0 ± 0.05
(0.1)
1.2 ± 0.05
0.2 ± 0.1
Unit: mm
0.2 ± 0.1
(0.4) (0.4)
0.5MAX
(0.1)
+ 0.1
0.15 – 0.05
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
EMFPAK-6
—
Conforms
1.2 mg
Rev.0, Aug. 2001, page 3 of 4
HTT1213E
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Aug. 2001, page 4 of 4