FDMC7672 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.7 m: Features General Description Max rDS(on) = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 7.0 m: at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C TA = 25 °C -Continuous Ratings 30 Units V ±20 V 20 (Note 1a) -Pulsed 16.9 A 50 EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range TA = 25 °C (Note 3) 144 (Note 1a) 2.3 mJ W -55 to +150 °C 53 °C/W Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) Package Marking and Ordering Information Device Marking FDMC7672 Device FDMC7672 ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET July 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 30 V 13 VDS = 24 V, VGS = 0 V mV/°C 1 TJ = 125 °C 250 VGS = 20 V, VDS = 0 V PA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -6 VGS = 10 V, ID = 16.9 A 4.3 5.7 VGS = 4.5 V, ID = 15.0 A 5.4 7.0 VGS = 10 V, ID = 16.9 A TJ = 125 °C 5.5 6.9 VDD = 5 V, ID = 16.9 A 82 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.2 1.9 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2925 3890 pF 1050 1400 pF 80 120 pF : 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 16.9 A, VGS = 10 V, RGEN = 6 : 13 24 ns 6 12 ns 31 49 ns 5 10 ns Total Gate Charge VGS = 0 V to 10 V 40 57 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 16.9 A 18 24 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge 9 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 16.9 A (Note 2) 0.83 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.72 1.2 IF = 16.9 A, di/dt = 100 A/Ps V 39 62 ns 18 32 nC NOTES: 1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. 3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, I AS = 17 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I AS = 7.9 A. ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 2 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 50 VGS = 6 V 40 VGS = 4.5 V VGS = 4 V 30 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 20 VGS = 3.5 V VGS = 3 V 10 0 0.0 0.5 1.0 4.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 3.5 3.0 VGS = 4 V 2.5 2.0 VGS = 4.5 V 1.5 1.0 0 10 20 40 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 20 rDS(on), DRAIN TO ID = 16.9 A VGS = 10 V 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics ID = 16.9 A PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 15 10 TJ = 125 oC 5 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 40 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 0.5 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 3.5 V 4.0 VDS = 5 V 30 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 VGS = 0 V 10 1 TJ = 150 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 3 1.2 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 16.9 A 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 Ciss 1000 Coss 2 100 f = 1 MHz VGS = 0 V 0 0 9 18 27 36 45 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 70 20 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = TJ = 100 oC 125 oC 50 40 VGS = 10 V 30 VGS = 4.5 V 20 10 o RTJC = 4.0 C/W Limited by Package 1 0.01 0.1 1 10 0 25 100 200 P(PK), PEAK TRANSIENT POWER (W) 100 Ps 10 1 ms 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RTJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 2000 1000 VGS = 10 V 100 10 SINGLE PULSE RTJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 70 THIS AREA IS LIMITED BY rDS(on) 75 o Figure 9. Unclamped Inductive Switching Capability 1 50 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 50 0.1 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o 0.001 0.0005 -4 10 RTJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 5 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3.30 0.10 C A B 2X 3.30 PIN#1 QUADRANT 0.10 C TOP VIEW 2X 0.8 MAX RECOMMENDED LAND PATTERN 0.10 C (0.203) 0.08 C 0.05 0.00 SIDE VIEW SEATING PLANE 2.32 2.22 PIN #1 IDENT 1 0.785 4 (4X) 0.55 0.45 0.350 1.150 R0.150 2.05 1.95 0.299 8 5 0.65 0.40 (8X) 0.30 1.95 0.10 0.05 C A B C BOTTOM VIEW A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 6 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 7 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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