KSP44/45 KSP44/45 High Voltage Transistor • Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC (max)=625mW TO-92 1 NPN Epitaxial Silicon Transistor 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSP44 : KSP45 500 400 V V : KSP44 : KSP45 400 350 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector Power Dissipation (Ta=25°C) 625 mW PC Collector Power Dissipation (TC=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 Test Condition IC=100µA, IB=0 * Collector -Emitter Breakdown Voltage : KSP44 : KSP45 IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current BVCEO ICES Max. Units 500 400 V V 400 350 V V 6 V : KSP44 : KSP45 VCB=400V, IE=0 VCB=320V, IE=0 0.1 0.1 µA µA : KSP44 : KSP45 VCE=400V, IB=0 VCE=320V, IB=0 0.5 0.5 µA µA 0.1 µA Collector Cut-off Current IEBO Emitter Cut-off Current VEB=4V, IC=0 hFE * DC Current Gain VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE (sat) Min. * Collector-Emitter Saturation Voltage 40 50 45 40 200 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA 0.4 0.5 0.75 0.75 V 7 pF VBE (sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA Cob Output Capacitance VCB=20V, IE=0, f=1MHz V V V * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSP44/45 Typical Characteristics 10 160 VCC=150V IC/IB=10 Ta=25℃ VBE(off)=4V VCE=10V 140 100 80 t[us], TIME hFE, DC CURRENT GAIN 120 60 40 1 20 0 tf -20 td -40 1 10 100 1000 0.1 10000 1 10 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn-On Switching Times 1000 100 t[us], TIME 10 ts 1 tf Ta =25℃ f=1MHz Cib[pF],Cob[pF], CAPACITANCE VCC =150V IC /IB=10 Ta=25℃ 1 10 100 Cib 10 Cob 1 0.1 0.1 100 IC[mA], COLLECTOR CURRENT 1 10 100 1000 V CB[V], COLLECTOR-BASE VOLTAGE Figure 3. Turn-Off Switching Times Figure 4. Capacitance 0.5 VCE[V] COLLECTOR EMITTER VOLTAGE 1.0 Ta=25℃ 0.8 VBE(sat) @IC/IB=10 [V], VOLTAGE 100 0.6 VBE(on) @V CE=10V 0.4 0.2 0.0 0.1 V CE(sat)@I C/IB=10 IC=10mA IC=1mA IC=50mA Ta=25℃ 0.4 0.3 0.2 0.1 0.0 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. On Voltage ©2002 Fairchild Semiconductor Corporation 1000 10 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT Figure 6. Collector Saturation Region Rev. A2, November 2002 100000 VCE=10V f=10MHz Ta =25℃ 10 1 0.1 0.1 Valid for Duty Cycle ≤ 10% IC[mA], COLLECTOR CURRENT hFE, SMALL SIGNAL CURRENT GAIN 100 10000 1000 1s Tc 100 Ta 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 7. High Frequency Current Gain ©2002 Fairchild Semiconductor Corporation =2 5℃ =2 5℃ 10 MSPA44 1 1 100us 1ms 1 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 8. Safe Operating Area Rev. A2, November 2002 KSP44/45 Typical Characteristics (Continued) KSP44/45 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1