AO4472 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard Product AO4472 is Pbfree (meets ROHS & Sony 259 specifications). AO4472L is a Green Product ordering option. AO4472 and AO4472L are electrically identical. VDS (V) = 30V ID = 19A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 80 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 16 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 19 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4472 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=19A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A 7.5 6 7.2 mΩ 1 V 4.5 A 6060 7270 pF 638 960 pF 355 530 pF 0.45 0.9 Ω 80 103 124 nC 37 48 58 nC VDS=5V, ID=19A mΩ 82 0.7 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=19A nA 2.5 5.2 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 100 6.1 VGS=4.5V, ID=15A Forward Transconductance 1.9 µA 4.3 TJ=125°C VSD Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current gFS Max 30 IDSS IS Typ S Qgs Gate Source Charge Qgd Gate Drain Charge 15 tD(on) Turn-On DelayTime 12 16 ns tr Turn-On Rise Time 8 12 ns tD(off) Turn-Off DelayTime 51.5 70 ns tf Turn-Off Fall Time 8.8 14 ns 33.5 44 22 30 ns nC VGS=10V, VDS=15V, RL=0.8Ω, RGEN=3Ω IF=19A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=19A, dI/dt=100A/µs 18 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 60 10V 70 50 3.5V 60 4.5V 40 40 ID(A) 50 ID (A) VDS=5V 3.0V 30 125°C 30 20 20 10 25°C 10 VGS=2.5V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 8.0 Normalized On-Resistance 1.6 7.0 VGS=4.5V RDS(ON) (mΩ) 2 6.0 5.0 VGS=10V 4.0 3.0 ID=19A VGS=4.5V 1.4 VGS=10V 1.2 1 0.8 0 20 40 60 80 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 15 ID=19A 1.0E+01 12 9 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 6 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 25°C 3 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4472 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=15V ID=19A Capacitance (pF) VGS (Volts) 8 6 4 2 4000 2000 0 0 20 40 60 80 100 Ciss 6000 Crss 0 120 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 10ms 80 1ms 0.1s 1s 10s DC 1.0 40 0 0.001 0.1 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 60 20 TJ(Max)=150°C TA=25°C D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 30 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 10.0 10 10 100 RDS(ON) limited 0.1 Coss Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000