ASI 2SC2904

2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor designed
for high power amplifiers in HF band.
PACKAGE STYLE .500 6L FLG
A
C
FEATURES:
2x Ø N
• Internal Input Matching Network
• PG = 11.5 dB at 1000 W/30 MHz
• Omnigold™ Metalization System
FU LL R
D
B
MAXIMUM RATINGS
M
K
H
22 A
IC
E
.725/18,42
F
G
J
I
L
D IM
M IN IM U M
inches / m m
inches / m m
50 V
A
.150 / 3.43
.160 / 4.06
VCEO
20 V
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
VEBO
4.0 V
VCBO
PDISS
TSTG
-55 °C to +175 °C
θJC
0.75 °C/W
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
H
.725 / 18.42
I
-55 °C to +175 °C
TJ
.045 / 1.14
B
200 W @ TC = 25 °C
M AXIM U M
J
.970 / 24.64
K
.090 / 2.29
.980 / 24.89
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.285 / 7.24
M
.120 / 3.05
N
.135 / 3.43
Common Emitter configuration
CHARACTERISTICS
SYMBOL
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
50
BVCEO
IC = 100 mA
20
BVEBO
IE = 20 mA
4.0
ICBO
VCB = 15 V
5.0
mA
IEBO
VCB = 3.0 V
5.0
mA
hFE*
VCE = 10 V
IC = 1.0 A
180
---
VCE = 12.5 V
PIN = 7.0 W
PO
ηC
V
V
10
f = 30 MHz
100
55
110
60
W
%
NOTE: *Pulse test, PW=150µS. duty=5%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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