2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System FU LL R D B MAXIMUM RATINGS M K H 22 A IC E .725/18,42 F G J I L D IM M IN IM U M inches / m m inches / m m 50 V A .150 / 3.43 .160 / 4.06 VCEO 20 V C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VEBO 4.0 V VCBO PDISS TSTG -55 °C to +175 °C θJC 0.75 °C/W E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 I -55 °C to +175 °C TJ .045 / 1.14 B 200 W @ TC = 25 °C M AXIM U M J .970 / 24.64 K .090 / 2.29 .980 / 24.89 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 Common Emitter configuration CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 50 BVCEO IC = 100 mA 20 BVEBO IE = 20 mA 4.0 ICBO VCB = 15 V 5.0 mA IEBO VCB = 3.0 V 5.0 mA hFE* VCE = 10 V IC = 1.0 A 180 --- VCE = 12.5 V PIN = 7.0 W PO ηC V V 10 f = 30 MHz 100 55 110 60 W % NOTE: *Pulse test, PW=150µS. duty=5% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1