MRF1000MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A E FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System ØC D IC 200 mA VCE 20 V PDISS 7.0 W TJ -65 C to +200 C O θJC B E MAXIMUM RATINGS TSTG C ØB E O O DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 O MAXIMUM 1.055 / 26.80 B -65 C to +150 C F C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 O 25.0 C/W CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 28 V hFE VCE = 5.0 V IC = 100 mA PG VCC = 18 V POUT = 0.2 W 15 f = 1090 MHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 120 --dB REV. B 1/1