VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FU LL R D FEATURES: 2 B • 175 MHz 12.5 V • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration VCBO 36 V VCEO 18 V VCES 36 V VEBO 4.0 V PDISS M K H L M IN IM U M inches / m m inches / m m A .150 / 3.43 .160 / 4.06 M A XIM U M .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 I 270 W @ TC = 25 °C J I D IM B 20 A E .725/18,42 F G MAXIMUM RATINGS IC 4 J .970 / 24.64 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M N .980 / 24.89 .120 / 3.05 .135 / 3.43 TJ -65 °C to +200 ° C TSTG -65 °C to +150 °C 1 = Collecttor 2 = Base 3&4 = Emitter θJC 0.65 °C/W ORDER CODE: ASI10719 CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 100 mA 36 V BVCBO IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA REV. C 1/2 VHB100-12 ERROR! REFERENCE SOURCE NOT FOUND. CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V PIN = 25 W IC = 5.0 A MINIMUM TYPICAL MAXIMUM 10 f = 1.0 MHz POUT = 100 W f = 175 MHz 6.0 60 UNITS 100 --- 390 pF dB % IMPEDANCE DATA FREQ 175 MHz ZIN (Ω) 1.05 – j0.9 ZCL (Ω) 0.5 – j1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2