MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units MPSH24 625 5.0 83.3 *MMBTH24 225 1.8 200 556 mW mW/°C °C/W °C/W MPSH24 / MMBTH24 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 1.0 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 4.0 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0 50 nA ON CHARACTERISTICS hFE DC Current Gain I C = 8.0 mA, VCE = 10 V 30 I C = 8.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 400 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% MHz 0.36 pF MPSH24 / MMBTH24 NPN RF Transistor