DAESAN E13001TO-126

POWER TRANSISTOR E13001
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-126 molded plastic body
±B ±
U
TO-126
F
C
Q
M
±A ±
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
NPN SILICON TRANSISTOR
D
A
B
M
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61 16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
±±±
M
2 PL
0.25 (0.010)
FEATURES
M
INCHES
MIN
MAX
0.425 0.435
0.295
0.305
0.095 0.105
0.020 0.026
0.115 0.130
0.094 BSC
0.050 0.095
0.015 0.025
0.575 0.655
5 TYP
0.148 0.158
0.045 0.065
0.025 0.035
0.145 0.155
0.040
±±±
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
M
A
M
B
M
o
Tc=25 C unless otherwise specified
Parameter
Symbol
Value
UNIT
Power dissipation
PCM
1.0
W
Collector current
ICM
0.2
A
TJ, TSTG
-55 C to +150 C
Operating and storage junction temperature range
ELECTRICAL CHARACTERISTICS
Parameter
o
o
o
C
o
Tc=25 C unless otherwise specified
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA , IE=0
600
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA , IC=0
7
V
Collector cut-off current
ICBO
VCB=600V , IE=0
100
μA
Collector cut-off current
ICEO
VCE=400V , IB=0
200
μA
Emitter cut-off current
IEBO
VEB=7V , IC=0
100
μA
hFE(1)
VCE=20V , IC=20mA
10
hFE(2)
VCE=10V , IC=0.25mA
5
Collector-emitter saturation voltage
VCEsat
IC=50mA , IB=10mA
0.5
V
Base-emitter saturation voltage
VBEsat
IC=50mA , IB=10mA
1.2
V
IE=100mA
1.1
V
DC current gain
40
Base-emitter voltage
VBE
Transition frequency
fT
Fall time
tf
IC=50mA , IB1=-IB2=5mA ,
0.3
μS
Storage time
ts
VCC=45V
1.5
μS
VCE=20V , IC=20mA
f=1MHz
8
MHz
RATINGS AND CHARACTERISTIC CURVES E13001