POWER TRANSISTOR E13005 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body ±B ± U TO-126 F DIM A B C D F G H J K M Q R S U V C Q M ±A ± 1 2 3 H K J V G NPN SILICON TRANSISTOR FEATURES R 0.25 (0.010) S D M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ±±± MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ±±± M 2 PL 0.25 (0.010) M A M B M o Tc=25 C unless otherwise specified Parameter Symbol Value UNIT Power dissipation PC 75 W Collector current (DC) IC 4.0 A Collector current (Pulse) ICP Operating and storage junction temperature range TJ, TSTG ELECTRICAL CHARACTERISTICS Parameter 8.0 o A o o -55 C to +150 C C o Tc=25 C unless otherwise specified Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=1mA , IC=0 9 V Collector cut-off current ICBO VCB=700V , IE=0 1 mA Collector cut-off current ICEO VCE=400V , IB=0 100 μA Emitter cut-off current IEBO VEB=9V , IC=0 1 mA DC current gain hFE VCE=5V , IC=1A 10 40 Collector-emitter saturation voltage VCEsat IC=2A , IB=500mA 0.6 V Base-emitter saturation voltage VBEsat IC=2A , IB=500mA 1.6 V VCE=10V , IC=500mA Transition frequency fT Fall time tf IC=2A , IB1=-IB2=0.4mA , Storage time ts VCC=120V f=1MHz 5 MHz 0.9 μS 4 μS RATINGS AND CHARACTERISTIC CURVES E13005