DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning .163(4.12) .153(3.87) 1 = Base 2 = Collector 3 = Emitter .044(1.12) .034(0.87) .060(1.52) .050(1.27) .148(3.75) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit VCEV 700 V VCEO 400 V Collector-Emitter Voltage VEBO 9 Collector Current Emitter-Base Voltage IC 1.5 A Base Current IB 0.75 A Total Power Dissipation(TC=25 C) PD 40 W Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o o .146(3.70) .136(3.44) .123(3.12) .113(2.87) .300(7.62) .290(7.37) 1 2 3 .591(15.0) .551(14.0) V .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .084(2.14) .074(1.88) .027(0.69) .017(0.43) .090 Typ (2.28) C C Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) (1)Pulse Test: Pulse Width Symbol Min Typ Max Unit BVCEV 700 - - V BVCEO 400 - - V ICEV - - 1 mA Test Conditions IC=1mA, VBE(off)=1.5V IC=10mA VCE=700V, VBE(off)=1.5V IEBO - - 1 mA VCE(sat)1 - - 0.5 V IC=0.5A, IB=0.1A VEB=9V VCE(sat)2 - - 1 V IC=1A, IB=0.25A VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A VBE(sat)1 - - 1 V IC=0.5A, IB=0.1A VBE(sat)2 - - 1.2 V IC=1A, IB=0.25A hFE1 8 - 40 - IC=0.5A, VCE=2V hFE2 5 - 25 - IC=1A, VCE=2V 380µs, Duty Cycle 2%