DC COMPONENTS CO., LTD. R DXT2222A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and high -speed, medium-power switching applications. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Collector-Base Voltage VCBO 75 V VCES 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Total Power Dissipation PD 1.2 W Junction Temperature TJ +150 o -55 to +150 o TSTG 1 Unit Collector-Emitter Voltage Storage Temperature .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 75 - - V Collector-Emitter Breakdown Voltage BVCEO 40 - - V IC=10mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IC=10µA ICBO - - 10 nA VCB=60V ICEX - - 10 nA VCB=60V, VEB(off)=3V IEBO - - 50 nA VEB=3V VCE(sat)1 - - 0.3 V IC=150mA, IB=15mA VCE(sat)2 - - 1 V IC=500mA, IB=50mA VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA VBE(sat)2 - - 2 V IC=500mA, IB=50mA hFE1 35 - - - IC=100µA, VCE=10V hFE2 50 - - - IC=1mA, VCE=10V hFE3 75 - - - IC=10mA, VCE=10V hFE4 100 - 300 - IC=150mA, VCE=10V hFE5 40 - - - IC=500mA, VCE=10V hFE6 50 - - - fT 300 - - MHz 380µs, Duty Cycle 2% IC=150mA, VCE=1V VCE=20V, f=100MHz, IC=20mA