DC COMPONENTS CO., LTD. BC635 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 .190(4.83) .170(4.33) Pinning o 1 = Emitter 2 = Collector 3 = Base 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Symbol Rating Unit VCES 45 V VCEO 45 V VEBO 5 V Collector Current IC 1 A Total Power Dissipation PD 1 W Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage Characteristic BVCEO 45 - - V Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 0.1 µA VCB=30V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IC=10mA, IB=0 IEBO - - 0.1 µA VEB=5V, IC=0 VCE(sat) - - 0.5 V IC=500mA, IB=50mA VBE(on) - - 1 V IC=500mA, VCE=2V hFE1 25 - - - IC=5mA, VCE=2V hFE2 40 - 250 - IC=150mA, VCE=2V hFE3 25 - - - fT - 100 - MHz 380µs, Duty Cycle 2% IC=500mA, VCE=2V IC=10mA, VCE=5V, f=50MHz