DC COMPONENTS CO., LTD. DMBT2907 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -60 - - V Collector-Emitter Breakdown Voltage BVCEO -40 - - V IC=-10mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -20 nA VCB=-50V Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=-10µA ICEX - - -50 nA VCE=-30V, VEB(off)=-0.5V VCE(sat)1 - -0.2 -0.4 V IC=-150mA, IB=-15mA VCE(sat)2 - -0.5 -1.6 V IC=-500mA, IB=-50mA VBE(sat)1 - - -1.3 V IC=-150mA, IB=-15mA VBE(sat)2 - - -2.6 V IC=-500mA, IB=-50mA hFE1 35 - - - IC=-0.1mA, VCE=-10V hFE2 50 - - - IC=-1mA, VCE=-10V hFE3 75 - - - IC=-10mA, VCE=-10V hFE4 100 180 300 - IC=-150mA, VCE=-10V hFE5 30 - - - IC=-500mA, VCE=-10V fT 200 - - MHz - - 8 pF Cob 380µs, Duty Cycle 2% IC=-50mA, VCB=-20V, f=100MHz VCB=-10V, f=1MHz, IE=0