DCCOM DMBTA05

DC COMPONENTS CO., LTD.
R
DMBTA05
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
.020(0.50)
.012(0.30)
1 = Base
2 = Emitter
3 = Collector
3
.108(0.65)
.089(0.25)
.063(1.60)
.055(1.40)
1
2
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical oCharacteristics
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
60
-
-
V
IC=100µA
Collector-Emitter Breakdown Voltage
BVCEO
60
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
4
-
-
V
IE=100µA
ICBO
-
-
100
nA
VCB=60V
ICEO
-
-
100
nA
VCE=60V
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.25
V
IC=100mA, IB=10mA
Base-Emitter On Voltage
VBE(on)
-
-
1.2
V
IC=100mA, VCE=1V
(1)
DC Current Gain
Transition Frequency
(1)Pulse Test: Pulse Width
hFE1
80
-
250
-
IC=10mA, VCE=1V
hFE2
50
-
-
-
IC=100mA, VCE=1V
fT
380µs, Duty Cycle
100
2%
-
-
MHz
IC=10mA, VCE=2V, f=100MHz