DC COMPONENTS CO., LTD. R DMBTA05 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=100µA ICBO - - 100 nA VCB=60V ICEO - - 100 nA VCE=60V Collector Cutoff Current (1) Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base-Emitter On Voltage VBE(on) - - 1.2 V IC=100mA, VCE=1V (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width hFE1 80 - 250 - IC=10mA, VCE=1V hFE2 50 - - - IC=100mA, VCE=1V fT 380µs, Duty Cycle 100 2% - - MHz IC=10mA, VCE=2V, f=100MHz