MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on). +0.2 2.54-0.2 +0.2 15.25-0.2 temperature. +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Critical DC electrical parameters specified at elevated 5.60 RDS(on) = 0.11 Ù @ VGS = -2.5 V. 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -20 V Gate to source voltage VGSS 8 V ID -16 A Idp -48 A 37.5 W Drain current TC=25 Drain current-pulsed Power dissipation PD 0.25 Derate above 25 W/ Thermal Resistance, Junction-to- Case RèJC 4 /W Thermal Resistance Junction to Ambient RèJA 40 /W Channel temperature Tch 175 Storage temperature Tstg -55 to +175 www.kexin.com.cn 1 MOSFET SMD Type KDB4020P(FDB4020P) Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max -20 Unit V Drain to source breakdown voltage VDSS Drain cut-off current IDSS VDS=-16V,VGS=0,TC=25 -1 Gate leakage current IGSS VGS= 8V,VGS=0V 100 nA -0.58 -1 V ID=250ìA VGS=0V Gate threshold voltage VGS(th) VDS = VGS, ID = -250ìA VGS=-4.5V,ID=-8A 0.068 0.08 Drain to source on-state resistance RDS(on) VGS=-4.5V,ID=-8A,TJ=125 0.098 0.13 VGS=-2.5V,ID=-7A 0.096 0.110 On-State Drain Current ID(on) Forward Transconductance gFS Input capacitance Ciss Output capacitance Coss VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A -0.4 -20 A Ù A 14 S 665 pF VDS=-10V,VGS=0,f=1MHZ 270 pF 70 Reverse transfer capacitance Crss Total Gate Charge Qg VDS = -5 V, 9.5 Gate-Source Charge Qgs ID = -16 A, VGS = -4.5 V * 1.3 pF 13 nC nC Gate-Drain Charge Qgd 2.2 Turn-on delay time ton 8 16 ns Rise time tr 24 38 ns Turn-off delay time toff Fall time tf Maximum Continuous Drain-Source Diode Forward Current VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ù* nC 50 80 ns 29 45 ns IS -16 A Maximum Pulsed Drain-Source Diode Forward Current ISM -48 A Drain-Source Diode Forward Voltage VSD -1.2 V * Pulse Test: Pulse Width 2 Testconditons www.kexin.com.cn 300 ìs, Duty Cycle VGS = 0 V, IS = -16 A * 2.0%