ELM-TECH ELM34801AA-N

Dual P-channel MOSFET
ELM34801AA-N
■General description
■Features
ELM34801AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-6A
Rds(on) < 50mΩ (Vgs=-10V)
Rds(on) < 80mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Vgs
Limit
-30
±20
Unit
V
V
Id
-6
-5
A
Idm
-30
A
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Ta=25°C
Ta=70°C
Power dissipation
Junction and storage temperature range
Pd
Tj, Tstg
2.5
1.3
-55 to 150
Note
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
SOP-8(TOP VIEW)
Typ.
Max.
62.5
Unit
°C/W
Note
■Circuit
Pin No.
Pin name
SOURCE1
GATE1
1
8
1
2
2
7
3
SOURCE2
3
6
4
5
4
5
6
GATE2
DRAIN2
DRAIN2
7
8
DRAIN1
DRAIN1
4- 1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM34801AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Min.
BVdss Id=-250μA, Vgs=0V
-30
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Tj=125°C
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
±100
nA
-3.0
V
A
50
mΩ
65
16
80
mΩ
S
Gfs
Diode forward voltage
Vsd
If=-1A, Vgs=0V
Max. body-diode continuous curren
Pulsed current
Is
Ism
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss
Vgs=0V, Vds=-15V, f=1MHz
Crss
Vgs=-10V, Vds=-15V
Id=-6A
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=-10V, Vds=-15V
td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω
tf
trr
Qrr
-1.5
μA
40
Forward transconductance
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-0.9
-30
-1
-10
Vgs=-10V, Id=-6A
Vgs=-4.5V, Id=-5A
Vds=-10V, Id=-6A
Qg
V
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Ta=25°C
Typ. Max. Unit Note
If=-5A, dl/dt=100A/μs
If=-5A, dl/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
1
1
-1.2
V
1
-2.1
-4
A
A
3
530
135
pF
pF
70
pF
10.0
1
14.0
nC
2
2.2
2.0
5.7
nC
nC
ns
2
2
2
10.0
18.0
ns
ns
2
2
5.0
15.5
7.9
ns
ns
nC
2
Logic Level Enhancement P06B03LVG
NIKO-SEM Dual P-Channel
Mode Field Effect Transistor
Dual P-channel MOSFET
ELM34801AA-N
SOP-8
Lead Free
■Typical electrical and thermal characteristics
3
4- 3
May-04-2005
Logic Level
Enhancement P06B03LVG
Dual P-channel
MOSFET
NIKO-SEM Dual P-Channel
Mode Field Effect Transistor
ELM34801AA-N
4
4- 4
SOP-8
Lead Free
May-04-2005