Single N-channel MOSFET ELM34402AA-N ■General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Symbol Vds Vgs Limit 30 ±20 Unit V V Id 8 6 A Idm 32 A Pd Tj, Tstg 2.5 1.6 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single N-channel MOSFET ELM34402AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Ta=25°C Typ. Max. Unit Note 30 1.0 8 V 1.5 1 10 μA ±100 nA 2.5 V A Vgs=10V, Id=8A 17 20 mΩ 26 16 32 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=15V, Id=8A Diode forward voltage Vsd If=1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz 1200 220 pF pF Crss 100 pF Qg 15.0 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1 1 1 1.1 V 1 2.3 4.6 A A 3 20.0 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=4.5V, Vds=15V, Id=2A Qgd td(on) 5.8 3.8 11 18 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=15V, Id≈1A td(off) Rgen=0.2Ω 17 37 26 54 ns ns 2 2 20 50 30 80 ns ns 2 Turn-off fall time Body diode reverse recovery time tf trr If=2.3A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM Single N-channel MOSFET N-Channel Enhancement Mode Field ELM34402AA-N Effect Transistor ■Typical electrical and thermal characteristics 4- 3 P2003BVG SOP-8 Lead-Free Single N-channel MOSFET N-Channel Enhancement Mode Field ELM34402AA-N Effect Transistor NIKO-SEM SOP-8 Lead-Free MAXIMUM SAFE OPERATING AREA 2 10 I D,DRAIN CURRENT( A ) P2003BVG R 1 10 100µ S it Lim n) ds(o 10m s 1m s 100 ms 0 1s 10s DC 10 VGS= 10V SINGLE PULSE R�JA= 125 °C/W TA = 25 °C -1 10 -2 10 -1 10 0 1 10 10 VDS,DRAIN - SOURCE VOLTAGE 2 10 4- 4 4 JUL-25-2005