P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40 28mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current TC = 70 °C Pulsed Drain Current 7 ID 1 6 IDM TC = 25 °C Power Dissipation 40 2 PD TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) A W 1.3 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL MAXIMUM UNITS 62.5 °C / W RθJA 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage V 1.5 3 ±100 nA VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 1 µA AUG-19-2004 P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VDS = 5V, VGS = 10V SOP-8 Lead-Free 20 A VGS = 4.5V, ID = 6A 30 42 VGS = 10V, ID = 7A 21 28 VDS = 10V, ID = 5A 24 gfs mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Qg 16 Total Gate Charge 2 Gate-Source Charge2 Gate-Drain Charge 2 790 VGS = 0V, VDS = 10V, f = 1MHz Qgs VDS = 0.5V(BR)DSS, VGS = 5V, 2.5 Qgd ID = 7A 2.1 Turn-On Delay Time2 td(on) 2 tr VDS = 20V Turn-Off Delay Time2 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω Rise Time Fall Time2 pF 175 nC 2.2 4.4 7.5 15 nS 11.8 21.3 tf 11 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 1.3 Pulsed Current ISM 2.6 Forward Voltage1 VSD IF = Is, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 3 1 15.5 A V nS 7.9 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-19-2004 NIKO-SEM P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 25° C 1 -55° C 0.1 0.01 0.001 0 3 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor 4 P2804HVG SOP-8 Lead-Free AUG-19-2004 P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 4.8 4.9 5.0 H 0.5 0.715 0.83 B 3.8 3.9 4.0 I 0.18 0.254 0.25 C 5.8 6.0 6.2 J D 0.38 0.445 0.51 K 1.27 E 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N J F D E I G B H K C A 5 AUG-19-2004