ETC P2804HVG

P2804HVG
Dual N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
40
28mΩ
7A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
TC = 25 °C
Continuous Drain Current
TC = 70 °C
Pulsed Drain Current
7
ID
1
6
IDM
TC = 25 °C
Power Dissipation
40
2
PD
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
A
W
1.3
Tj, Tstg
-55 to 150
TL
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
TYPICAL
MAXIMUM
UNITS
62.5
°C / W
RθJA
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
40
VGS(th)
VDS = VGS, ID = 250µA
1
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
V
1.5
3
±100 nA
VDS = 32V, VGS = 0V
1
VDS = 30V, VGS = 0V, TJ = 55 °C
10
1
µA
AUG-19-2004
P2804HVG
Dual N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
On-State Drain Current1
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
VDS = 5V, VGS = 10V
SOP-8
Lead-Free
20
A
VGS = 4.5V, ID = 6A
30
42
VGS = 10V, ID = 7A
21
28
VDS = 10V, ID = 5A
24
gfs
mΩ
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
65
Qg
16
Total Gate Charge
2
Gate-Source Charge2
Gate-Drain Charge
2
790
VGS = 0V, VDS = 10V, f = 1MHz
Qgs
VDS = 0.5V(BR)DSS, VGS = 5V,
2.5
Qgd
ID = 7A
2.1
Turn-On Delay Time2
td(on)
2
tr
VDS = 20V
Turn-Off Delay Time2
td(off)
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
Rise Time
Fall Time2
pF
175
nC
2.2
4.4
7.5
15
nS
11.8 21.3
tf
11
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
1.3
Pulsed Current
ISM
2.6
Forward Voltage1
VSD
IF = Is, VGS = 0V
Reverse Recovery Time
trr
IF = 5A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
3
1
15.5
A
V
nS
7.9
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
AUG-19-2004
NIKO-SEM
P2804HVG
Dual N-Channel Enhancement Mode
Field Effect Transistor
SOP-8
Lead-Free
TYPICAL PERFORMANCE CHARACTERISTICS
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
25° C
1
-55° C
0.1
0.01
0.001
0
3
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
4
P2804HVG
SOP-8
Lead-Free
AUG-19-2004
P2804HVG
Dual N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
SOP-8
Lead-Free
SOIC-8(D) MECHANICAL DATA
mm
mm
Dimension
Dimension
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.8
4.9
5.0
H
0.5
0.715
0.83
B
3.8
3.9
4.0
I
0.18
0.254
0.25
C
5.8
6.0
6.2
J
D
0.38
0.445
0.51
K
1.27
E
0.22
0°
4°
8°
L
F
1.35
1.55
1.75
M
G
0.1
0.175
0.25
N
J
F
D
E
I
G
B
H
K
C
A
5
AUG-19-2004