Dual N-channel MOSFET ELM34804AA-N ■General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Vds Vgs Limit 60 ±20 Unit V V Id 4.5 4.0 A Idm 20 A Pd Junction and storage temperature range Tj, Tstg 2.0 1.3 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 8 1 2 SOURCE1 GATE1 2 7 3 SOURCE2 3 6 4 5 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4- 1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34804AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=48V, Vgs=0V Vds=40V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 60 1.0 20 V 1.5 1 10 μA ±100 nA 2.5 V A Vgs=10V, Id=4.5A 42 55 mΩ 55 14 75 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=4A Vds=10V, Id=4.5A Diode forward voltage Vsd If=Is, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Min. Ta=25°C Typ. Max. Unit Note 1 1 1 V 1 1.3 2.6 A A 3 650 80 pF pF Crss 35 pF Qg 12.5 Vgs=0V, Vds=25V, f=1MHz 1 18.0 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=30V, Id=4.5A Qgd td(on) 2.4 2.6 11 20 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=30V, Id≈1A td(off) Rgen=6Ω 8 19 18 35 ns ns 2 2 6 15 ns 2 Turn-off fall time tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM P5506HVG Dual N-Channel Enhancement Mode Dual N-channel MOSFET Field Effect Transistor SOP-8 Lead-Free ELM34804AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V Is - Reverse Drain Current(A) 10 25° C 0.1 -55° C 0.01 0.001 0.0001 4- 3 T A = 125° C 1 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 NIKO-SEM Dual N-channel MOSFET Dual N-Channel Enhancement Mode ELM34804AA-N Field Effect Transistor P5506HVG SOP-8 Lead-Free 4- 4 4 AUG-19-2004