Single P-channel MOSFET ELM34407AA-N ■General description ■Features ELM34407AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 32mΩ (Vgs=-10V) Rds(on) < 55mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Limit Unit Vds Vgs -30 ±25 V V -8 -7 -30 Id Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg Note A A 2.5 1.3 -55 to 150 3 W °C ■Thermal characteristics Parameter Symbol Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Rθjc Rθja ■Pin configuration Typ. Max. Unit 25 50 °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4- 1 D G S Single P-channel MOSFET ELM34407AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V,Vgs=0V,Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±25V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) μA ±100 nA -2.5 V A 32 mΩ 44 7 55 mΩ S Gfs Diode forward voltage Vsd Is=-1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss Vgs=-10V, Vds=-15V Id=-6A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-10V td(off) Id≈-1A, Rgen=3Ω Turn-off fall time Body diode reverse recovery charge -1.5 -1 -10 26 Forward transconductance Qg V Vgs=-10V, Id=-8A Vgs=-4.5V, Id=-6A Vds=-10V, Id=-6A Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -0.8 -30 Ta=25°C Typ. Max. Unit Note tf Qrr NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 1 -1 V 1 -3 -6 A A 3 920 190 pF pF 120 pF 18.5 nC 2 2.7 4.5 7.7 nC nC ns 2 2 2 5.7 20.0 ns ns 2 2 9.5 7.9 ns nC 2 NIKO-SEM Single P-channel MOSFET P-ChannelELM34407AA-N Logic Level Enhancement Mode Field Effect Transistor ■Typical electrical and thermal characteristics 4- 3 P3203EVG SOP-8 Lead-Free NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement ELM34407AA-N Mode Field Effect Transistor 4- 4 P3203EVG SOP-8 Lead-Free