EIC1112-8 11.7-12.7 GHz 8-Watt Internally Matched Power FET ISSUED 07/03/2007 FEATURES • • • • • • 11.7– 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 0.060 MIN 0.650±0.008 Excelics 0.060 MIN 0.022 EIC1112-8 0.512 0.319 DRAIN GATE YYWW 2X 0.094 0.382 0.004 0.130 0.071±0.008 0.045 Caution! ESD sensitive device. O ELECTRICAL CHARACTERISTICS (Ta = 25 C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 12.7GHz IDSS Saturated Drain Current VP Pinch-off Voltage RTH MIN TYP 38.5 39.5 dBm 5 6 dB dB 30 f = 11.7-12.7GHz % 2300 -40 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Thermal Resistance 2800 mA dBc -43 4000 5000 -2.5 -4.0 3..5 2) S.C.L. = Single Carrier Level. UNITS ±0.6 3 Note: 1) Tested with 100 Ohm gate resistor. MAX mA V o 4 C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4.5V Forward Gate Current 86.4mA 28.8mA Reserve Gate Current -14.4mA -4.8mA Input Power 38.5dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 38W 38W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EIC1112-8 ISSUED 07/03/2007 11.7-12.7 GHz 8-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007