EIC7179-10 7.10-7.90 GHz 10-Watt Internally Matched Power FET ISSUED DATE: 01/30/2008 FEATURES • • • • • • • • Excelics 7.10-7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 29.5dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 EIC7179-10 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 7.10-7.90GHz MIN TYP MAX 39.5 40.5 dBm 7.5 8.5 dB ±0.6 dB 28 f = 7.10-7.90GHz % Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 29.5dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.90GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 5700 7100 VP Pinch-off Voltage VDS = 3 V, IDS = 57 mA -2.5 -4.0 RTH UNITS 3200 -43 3 Thermal Resistance 3600 mA -46 dBc 2.5 3.0 mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 15V 10V Vgs Gate-Source Voltage -5V -4.0V Igsf Forward Gate Current 104.4mA 34.8mA Igsr Reserve Gate Current -17.4mA -5.8mA Pin Input Power 39.5dBm @ 3dB Compression Tch Channel Temperature o 175 C 175 oC o Tstg Storage Temperature -65 to +175 C -65 to +175 oC Pt Total Power Dissipation 50W 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2008 EIC7179-10 ISSUED DATE: 01/30/2008 7.10-7.90 GHz 10-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2008