EXCELICS EIC0910-12

EIC0910-12
9.50-10.50 GHz 12-Watt Internally Matched Power FET
UPDATED 03/07/2008
FEATURES
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Excelics
.024
EIC0910-12
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
.827±.010 .669
.421
.120 MIN
.120 MIN
YYWW
SN
.004
.125
.063
.508±.008
.442
.004
.168±.010
.105±.008
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200Ma
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 9.50-10.50GHz
Id1dB
Drain Current at 1dB Compression
IM3
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ ≈ 65% IDSS
f = 10.50GHz
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
RTH
Thermal Resistance3
MIN
TYP
MAX
UNITS
39.5
40.5
dBm
6.0
7.0
dB
±0.6
dB
30
f = 9.50-10.50GHz
%
3300
-43
4200
mA
dBc
-46
VDS = 3 V, VGS = 0 V
6500
9000
mA
VDS = 3 V, IDS = 58 mA
-2.5
-4.0
V
2.3
2.6
Note: 1. Tested with 50 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
o
C/W
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage
15
10V
Gate-Source Voltage
-5
-4V
PARAMETERS
Forward Gate Current
130mA
43mA
Reverse Gate Current
-21mA
-7mA
Input Power
40.0dBm
@ 3dB Compression
Channel Temperature
o
175 oC
175 C
o
Storage Temperature
-65 to +175 C
-65 to +175 oC
Total Power Dissipation
57W
57W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised March 2008
EIC0910-12
UPDATED 03/07/2008
9.50-10.50 GHz 12-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised March 2008